JPS5245878A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5245878A
JPS5245878A JP12072775A JP12072775A JPS5245878A JP S5245878 A JPS5245878 A JP S5245878A JP 12072775 A JP12072775 A JP 12072775A JP 12072775 A JP12072775 A JP 12072775A JP S5245878 A JPS5245878 A JP S5245878A
Authority
JP
Japan
Prior art keywords
emitter
semiconductor device
junction depth
emitter region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12072775A
Other languages
Japanese (ja)
Inventor
Hisayuki Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12072775A priority Critical patent/JPS5245878A/en
Publication of JPS5245878A publication Critical patent/JPS5245878A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: An emitter region having a second junction depth is provided to the surroundings of an emitter region having a first emitter junction depth, and an electrode is attached to the the former emitter only, whereby a semiconductor having low base resistance and good dielectric strength between emitter and base is obtained.
COPYRIGHT: (C)1977,JPO&Japio
JP12072775A 1975-10-08 1975-10-08 Semiconductor device Pending JPS5245878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12072775A JPS5245878A (en) 1975-10-08 1975-10-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12072775A JPS5245878A (en) 1975-10-08 1975-10-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5245878A true JPS5245878A (en) 1977-04-11

Family

ID=14793494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12072775A Pending JPS5245878A (en) 1975-10-08 1975-10-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5245878A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536950A (en) * 1983-02-10 1985-08-27 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536950A (en) * 1983-02-10 1985-08-27 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor device

Similar Documents

Publication Publication Date Title
JPS53132275A (en) Semiconductor device and its production
JPS5353979A (en) Transistor
JPS5367368A (en) Semiconductor device
JPS5245878A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS5380183A (en) Semiconductor device
JPS51132973A (en) Semiconductor device
JPS5269275A (en) Transistor
JPS52129380A (en) Semiconductor device
JPS5216166A (en) Semiconductor device
JPS51114081A (en) Construction of a semi-conductor device
JPS5353255A (en) Manufacture of semiconductor device
JPS51130169A (en) Semiconductor device
JPS5440574A (en) Manufacture of semiconductor device
JPS533071A (en) Semiconductor device
JPS5376768A (en) Semoconductor device
JPS53127271A (en) Semiconductor device
JPS5422779A (en) Semiconductor device
JPS5432986A (en) Semiconductor device
JPS5221774A (en) Producing system for transistor
JPS51114083A (en) Construction of a semiconductor device
JPS51114084A (en) Semiconductor device
JPS5278377A (en) Semiconductor device
JPS5367367A (en) Semiconductor device
JPS5368176A (en) High frequency power semiconductor device