JPS5422779A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5422779A
JPS5422779A JP8725177A JP8725177A JPS5422779A JP S5422779 A JPS5422779 A JP S5422779A JP 8725177 A JP8725177 A JP 8725177A JP 8725177 A JP8725177 A JP 8725177A JP S5422779 A JPS5422779 A JP S5422779A
Authority
JP
Japan
Prior art keywords
base
emitter
semiconductor device
region
transformer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8725177A
Other languages
Japanese (ja)
Inventor
Hiroshi Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8725177A priority Critical patent/JPS5422779A/en
Publication of JPS5422779A publication Critical patent/JPS5422779A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To ensure the resistance to the high reverse voltage between the emitter and the base by forming a same conduction-type region as the emitter region between the base-emitter junction and the base electrode, and thus to eliminate the transformer, etc. to simplify the circuit constitution.
COPYRIGHT: (C)1979,JPO&Japio
JP8725177A 1977-07-22 1977-07-22 Semiconductor device Pending JPS5422779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8725177A JPS5422779A (en) 1977-07-22 1977-07-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8725177A JPS5422779A (en) 1977-07-22 1977-07-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5422779A true JPS5422779A (en) 1979-02-20

Family

ID=13909572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8725177A Pending JPS5422779A (en) 1977-07-22 1977-07-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5422779A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541000A (en) * 1980-02-13 1985-09-10 Telefunken Electronic Gmbh Varactor or mixer diode with surrounding substrate metal contact and top surface isolation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541000A (en) * 1980-02-13 1985-09-10 Telefunken Electronic Gmbh Varactor or mixer diode with surrounding substrate metal contact and top surface isolation

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