JPS5422779A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5422779A
JPS5422779A JP8725177A JP8725177A JPS5422779A JP S5422779 A JPS5422779 A JP S5422779A JP 8725177 A JP8725177 A JP 8725177A JP 8725177 A JP8725177 A JP 8725177A JP S5422779 A JPS5422779 A JP S5422779A
Authority
JP
Japan
Prior art keywords
base
emitter
semiconductor device
region
transformer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8725177A
Other languages
Japanese (ja)
Inventor
Hiroshi Maekawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8725177A priority Critical patent/JPS5422779A/en
Publication of JPS5422779A publication Critical patent/JPS5422779A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To ensure the resistance to the high reverse voltage between the emitter and the base by forming a same conduction-type region as the emitter region between the base-emitter junction and the base electrode, and thus to eliminate the transformer, etc. to simplify the circuit constitution.
COPYRIGHT: (C)1979,JPO&Japio
JP8725177A 1977-07-22 1977-07-22 Semiconductor device Pending JPS5422779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8725177A JPS5422779A (en) 1977-07-22 1977-07-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8725177A JPS5422779A (en) 1977-07-22 1977-07-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5422779A true JPS5422779A (en) 1979-02-20

Family

ID=13909572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8725177A Pending JPS5422779A (en) 1977-07-22 1977-07-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5422779A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541000A (en) * 1980-02-13 1985-09-10 Telefunken Electronic Gmbh Varactor or mixer diode with surrounding substrate metal contact and top surface isolation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541000A (en) * 1980-02-13 1985-09-10 Telefunken Electronic Gmbh Varactor or mixer diode with surrounding substrate metal contact and top surface isolation

Similar Documents

Publication Publication Date Title
JPS5353979A (en) Transistor
JPS5413782A (en) Semiconductor device
JPS51130174A (en) Semiconductor device process
JPS5422779A (en) Semiconductor device
JPS524787A (en) Transistor containing embedded base
JPS51132973A (en) Semiconductor device
JPS5211872A (en) Semiconductor device
JPS5439562A (en) Semiconductor switch
JPS5228868A (en) Semiconductor device
JPS51130169A (en) Semiconductor device
JPS533071A (en) Semiconductor device
JPS51145284A (en) Semiconductor device
JPS5440574A (en) Manufacture of semiconductor device
JPS5233467A (en) Semiconductor switch circuit
JPS51114083A (en) Construction of a semiconductor device
JPS5376768A (en) Semoconductor device
JPS5416190A (en) Vertical type pnp transistor for semiconductor integrated circuits
JPS51114084A (en) Semiconductor device
JPS5437477A (en) Manufacture of semiconductor device
JPS5379461A (en) Semiconductor device and its manufacturing process
JPS51135367A (en) Semiconductor device
JPS53107280A (en) Semiconductor device
JPS545618A (en) Semiconductor device
JPS51146181A (en) Press contact type diode device
JPS5313883A (en) Semiconductor device and its production