JPS5314586A - Mis type semiconductor memory device - Google Patents

Mis type semiconductor memory device

Info

Publication number
JPS5314586A
JPS5314586A JP8815976A JP8815976A JPS5314586A JP S5314586 A JPS5314586 A JP S5314586A JP 8815976 A JP8815976 A JP 8815976A JP 8815976 A JP8815976 A JP 8815976A JP S5314586 A JPS5314586 A JP S5314586A
Authority
JP
Japan
Prior art keywords
memory device
type semiconductor
semiconductor memory
mis type
loading means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8815976A
Other languages
Japanese (ja)
Other versions
JPS6030107B2 (en
Inventor
Norimasa Yasui
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51088159A priority Critical patent/JPS6030107B2/en
Priority to DE19772733514 priority patent/DE2733514A1/en
Priority to DE2760086A priority patent/DE2760086C2/de
Publication of JPS5314586A publication Critical patent/JPS5314586A/en
Publication of JPS6030107B2 publication Critical patent/JPS6030107B2/en
Priority to US07/684,867 priority patent/US5359562A/en
Priority to US08/230,814 priority patent/US5446689A/en
Expired legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To reduce the occupying area of loading means, increase resistivity and reduce power consumption by forming the loading means of the inverters forming flip-flops with the polycrystalline Si layers of a low impurity resistivity concentration or high.
COPYRIGHT: (C)1978,JPO&Japio
JP51088159A 1976-07-26 1976-07-26 MIS type semiconductor memory device Expired JPS6030107B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP51088159A JPS6030107B2 (en) 1976-07-26 1976-07-26 MIS type semiconductor memory device
DE19772733514 DE2733514A1 (en) 1976-07-26 1977-07-25 MISFET control electrode produced on semiconductor substrate - is formed on top of insulator layer overlapping source and drain areas
DE2760086A DE2760086C2 (en) 1976-07-26 1977-07-25
US07/684,867 US5359562A (en) 1976-07-26 1991-04-15 Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry
US08/230,814 US5446689A (en) 1976-07-26 1994-04-21 Semiconductor memory having a polycrystalline silicon load resistor and CMOS peripheral circuitry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51088159A JPS6030107B2 (en) 1976-07-26 1976-07-26 MIS type semiconductor memory device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP58134314A Division JPS6034273B2 (en) 1983-07-25 1983-07-25 MIS type semiconductor memory device
JP58134315A Division JPS6031110B2 (en) 1983-07-25 1983-07-25 MIS type semiconductor memory device
JP61104660A Division JPS61263154A (en) 1986-05-09 1986-05-09 Mis type semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5314586A true JPS5314586A (en) 1978-02-09
JPS6030107B2 JPS6030107B2 (en) 1985-07-15

Family

ID=13935133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51088159A Expired JPS6030107B2 (en) 1976-07-26 1976-07-26 MIS type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6030107B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342577A (en) * 1976-09-27 1978-04-18 Texas Instruments Inc Ic resistor element and method of producing same
JPS54122984A (en) * 1978-03-16 1979-09-22 Nec Corp Memory unit of integrated circuit
JPS57143851A (en) * 1981-02-27 1982-09-06 Toshiba Corp Manufacture of polycrystal silicon resistor element
JPS586586A (en) * 1981-07-02 1983-01-14 Mitsubishi Electric Corp Semiconductor storage device
US4907057A (en) * 1979-09-19 1990-03-06 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011644A (en) * 1973-06-01 1975-02-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011644A (en) * 1973-06-01 1975-02-06

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342577A (en) * 1976-09-27 1978-04-18 Texas Instruments Inc Ic resistor element and method of producing same
JPS54122984A (en) * 1978-03-16 1979-09-22 Nec Corp Memory unit of integrated circuit
US4907057A (en) * 1979-09-19 1990-03-06 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS57143851A (en) * 1981-02-27 1982-09-06 Toshiba Corp Manufacture of polycrystal silicon resistor element
JPS586586A (en) * 1981-07-02 1983-01-14 Mitsubishi Electric Corp Semiconductor storage device
JPS6218999B2 (en) * 1981-07-02 1987-04-25 Mitsubishi Electric Corp

Also Published As

Publication number Publication date
JPS6030107B2 (en) 1985-07-15

Similar Documents

Publication Publication Date Title
JPS52101990A (en) Semiconductor device for photoelectric transducer and its manufacture
JPS52105784A (en) Mios type memory unit
JPS51126761A (en) Schottky barrier type semi-conductor unit
JPS5339061A (en) Production of semiconductor device
JPS5314586A (en) Mis type semiconductor memory device
JPS544084A (en) Manufacture for semiconductor integrated circuit
JPS5324290A (en) Semiconductor device
JPS52109369A (en) Manufacture of semiconductor device
JPS5378181A (en) Semiconductor device and its manufacture
JPS5278389A (en) Semiconductor memory device
JPS531471A (en) Manufacture for semiconductor device
JPS5214377A (en) Semiconductor device
JPS5266368A (en) Semiconductor logic circuit
JPS5354989A (en) Semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5267275A (en) Semiconductor unit
JPS5371559A (en) Manufacture of pn junction
JPS51121279A (en) Junction breakdown type semiconductor memory device
JPS5373990A (en) Semiconductor device
JPS5314585A (en) Semiconductor device
JPS5270775A (en) Integrated circuit containing mos-type semiconductor device
JPS5326583A (en) Semiconductor device
JPS5373081A (en) Manufacture of mis-type semiconductor device
JPS5310288A (en) Semiconductor integrated circuit
JPS5384690A (en) Field effect transistor