JPS54122984A - Memory unit of integrated circuit - Google Patents

Memory unit of integrated circuit

Info

Publication number
JPS54122984A
JPS54122984A JP3078378A JP3078378A JPS54122984A JP S54122984 A JPS54122984 A JP S54122984A JP 3078378 A JP3078378 A JP 3078378A JP 3078378 A JP3078378 A JP 3078378A JP S54122984 A JPS54122984 A JP S54122984A
Authority
JP
Japan
Prior art keywords
transistors
fet
gates
constitution
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3078378A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3078378A priority Critical patent/JPS54122984A/en
Publication of JPS54122984A publication Critical patent/JPS54122984A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the delay time and to speed up the operaton, by providing two FET's on one semiconductor substrate and using the FET having the gate electrode controlled lower resistance wiring as transfer gate. CONSTITUTION:The static type memory cell circuit is constituted with the driver transistors Q1, Q2, load depletion type transistors Q3,Q4, and transfer gate transistors Q5,Q6. Further, the selection of memory cell is made with the digit lines L2 and L3 taking the data in the cell via transistors Q5, Q6 and the word line L1 connecting the gates of the transistors Q5, Q6. With this constitution, the gate electrodes of transistors Q5, Q6 are formed with Al wire excellent in conductivity and the gates of Q1 to Q4 are formed by using polycrystal Si. Thus, since the layer resistance of the Al wire can be decreased to about 0.02 ohm/square, the stray capacitance of the word line L1 can rapidly be charged and discharged and the circuit is of high speed type.
JP3078378A 1978-03-16 1978-03-16 Memory unit of integrated circuit Pending JPS54122984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3078378A JPS54122984A (en) 1978-03-16 1978-03-16 Memory unit of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3078378A JPS54122984A (en) 1978-03-16 1978-03-16 Memory unit of integrated circuit

Publications (1)

Publication Number Publication Date
JPS54122984A true JPS54122984A (en) 1979-09-22

Family

ID=12313261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3078378A Pending JPS54122984A (en) 1978-03-16 1978-03-16 Memory unit of integrated circuit

Country Status (1)

Country Link
JP (1) JPS54122984A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180159A (en) * 1984-02-28 1985-09-13 Fujitsu Ltd Semiconductor memory device
JPS63239862A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor storage device
JPS63296264A (en) * 1988-05-02 1988-12-02 Hitachi Ltd Static ram
JPH02132856A (en) * 1989-04-12 1990-05-22 Hitachi Ltd Manufacture of semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267530A (en) * 1975-12-03 1977-06-04 Toshiba Corp Semiconductor memory circuit
JPS5314586A (en) * 1976-07-26 1978-02-09 Hitachi Ltd Mis type semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267530A (en) * 1975-12-03 1977-06-04 Toshiba Corp Semiconductor memory circuit
JPS5314586A (en) * 1976-07-26 1978-02-09 Hitachi Ltd Mis type semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180159A (en) * 1984-02-28 1985-09-13 Fujitsu Ltd Semiconductor memory device
JPS63239862A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor storage device
JPS63296264A (en) * 1988-05-02 1988-12-02 Hitachi Ltd Static ram
JPH02132856A (en) * 1989-04-12 1990-05-22 Hitachi Ltd Manufacture of semiconductor memory

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