JPS5558891A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5558891A
JPS5558891A JP13190678A JP13190678A JPS5558891A JP S5558891 A JPS5558891 A JP S5558891A JP 13190678 A JP13190678 A JP 13190678A JP 13190678 A JP13190678 A JP 13190678A JP S5558891 A JPS5558891 A JP S5558891A
Authority
JP
Japan
Prior art keywords
cells
small
memory cell
amplifier
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13190678A
Other languages
Japanese (ja)
Inventor
Tadahide Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13190678A priority Critical patent/JPS5558891A/en
Publication of JPS5558891A publication Critical patent/JPS5558891A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Abstract

PURPOSE:To make small the matrix shaped memory cell chip in size, by decreasing the area of memory cell split with the gate transistor in connection to the sense amplifier with pair as it close to the sense amplifier. CONSTITUTION:The memory cells 31, 33... and 32, 34... formed with the MOS transistor connected to the bit lines 23, 24... paired to the sense amplifier 37 are split with the transistors T21, T22... driven with the clock fed to the gate and they are selected with the address with the X, Y decorders 38 and 39. As the cells 31... selected are close to the amplifier 37, the parasitic capacitance of the bit lines 23... are small, and the ratio of the parasitic capacitance in proportion to the signal potential difference at readout to the memory capacity of the cells 23... is smaller. Accordingly, the memory capacity can be reduced by taking the area of the cells 23... small as closer to the amplifier 37. As a result, the matrix shaped memory cell chip can be made small in size.
JP13190678A 1978-10-26 1978-10-26 Semiconductor memory unit Pending JPS5558891A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13190678A JPS5558891A (en) 1978-10-26 1978-10-26 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13190678A JPS5558891A (en) 1978-10-26 1978-10-26 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5558891A true JPS5558891A (en) 1980-05-01

Family

ID=15068928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13190678A Pending JPS5558891A (en) 1978-10-26 1978-10-26 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5558891A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103192A (en) * 1980-12-18 1982-06-26 Mitsubishi Electric Corp Semiconductor memory device
JPS57141096A (en) * 1981-01-21 1982-09-01 Siemens Ag Integrated semiconductor memory
JPS61123093A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53131906A (en) * 1977-04-23 1978-11-17 Ishikawajima Harima Heavy Ind Co Ltd External combustion type hot blast stove

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53131906A (en) * 1977-04-23 1978-11-17 Ishikawajima Harima Heavy Ind Co Ltd External combustion type hot blast stove

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103192A (en) * 1980-12-18 1982-06-26 Mitsubishi Electric Corp Semiconductor memory device
JPS57141096A (en) * 1981-01-21 1982-09-01 Siemens Ag Integrated semiconductor memory
JPH0361279B2 (en) * 1981-01-21 1991-09-19 Siemens Ag
JPS61123093A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd Semiconductor memory device
JPH0412556B2 (en) * 1984-11-20 1992-03-04 Fujitsu Ltd

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