JPS54148340A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS54148340A
JPS54148340A JP5676378A JP5676378A JPS54148340A JP S54148340 A JPS54148340 A JP S54148340A JP 5676378 A JP5676378 A JP 5676378A JP 5676378 A JP5676378 A JP 5676378A JP S54148340 A JPS54148340 A JP S54148340A
Authority
JP
Japan
Prior art keywords
digit line
output
circuit
plus
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5676378A
Other languages
Japanese (ja)
Other versions
JPS6146918B2 (en
Inventor
Tetsuo Misaizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5676378A priority Critical patent/JPS54148340A/en
Priority to DE2919166A priority patent/DE2919166C2/en
Publication of JPS54148340A publication Critical patent/JPS54148340A/en
Priority to US06/237,815 priority patent/US4366559A/en
Publication of JPS6146918B2 publication Critical patent/JPS6146918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To reduce the load capacity of the digit line as well as to increase the detection sesitivity for the memory circuit using the insulator gate type FET. CONSTITUTION:MOS sense amplifier 5 is composed with MOS transistors Q1 and Q2 which are connected in cross. In this circuit 5, memory cell C0 and C2 plus digit line 1 connected to dummy cell DS0 is connected to the gate of TrQ2 via the input/ output of MOSTrQ3, and at the same time digit line 2 connected to dummy cell DS1 plus memory cell C1 and C2 are connected to the gate of TrQ2 in circuit 5 via the input/output of TrQ4. Furthermore, memory cell C4 and C6 plus digit line 3 connected to dummy cell DS2 and digit line 4 connected to dummy cell DS3 plus memory cell C5 and C7 are connected to the gates of TrQ2 and Q1 of circuit 5 respectively via TrQ5 and Q6. Then address A2 of the gates of TrQ3 and Q4 are connected to output DSL0 and then to output DSL2 via address A2 of the gates of TrQ5 and Q6.
JP5676378A 1978-05-12 1978-05-12 Memory circuit Granted JPS54148340A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5676378A JPS54148340A (en) 1978-05-12 1978-05-12 Memory circuit
DE2919166A DE2919166C2 (en) 1978-05-12 1979-05-11 Storage device
US06/237,815 US4366559A (en) 1978-05-12 1981-02-24 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5676378A JPS54148340A (en) 1978-05-12 1978-05-12 Memory circuit

Publications (2)

Publication Number Publication Date
JPS54148340A true JPS54148340A (en) 1979-11-20
JPS6146918B2 JPS6146918B2 (en) 1986-10-16

Family

ID=13036524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5676378A Granted JPS54148340A (en) 1978-05-12 1978-05-12 Memory circuit

Country Status (1)

Country Link
JP (1) JPS54148340A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792486A (en) * 1980-10-10 1982-06-09 Inmos Corp Folded bit line-common use sensing amplifier structure in mos memory
JPS5823474A (en) * 1981-08-05 1983-02-12 Fujitsu Ltd Semiconductor memory storage
JPS60145594A (en) * 1984-01-09 1985-08-01 Nec Corp Semiconductor memory device
USRE32682E (en) * 1980-10-10 1988-05-31 Inmos Corporation Folded bit line-shared sense amplifiers
JPS63153792A (en) * 1986-12-17 1988-06-27 Sharp Corp Semiconductor memory device
JPH03116486A (en) * 1990-05-18 1991-05-17 Hitachi Ltd Semiconductor memory device
JPH0765583A (en) * 1993-08-26 1995-03-10 Nec Corp Semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102231A (en) * 1974-01-09 1975-08-13
JPS5350944A (en) * 1976-10-20 1978-05-09 Siemens Ag Mos semiconductor memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102231A (en) * 1974-01-09 1975-08-13
JPS5350944A (en) * 1976-10-20 1978-05-09 Siemens Ag Mos semiconductor memory

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792486A (en) * 1980-10-10 1982-06-09 Inmos Corp Folded bit line-common use sensing amplifier structure in mos memory
USRE32682E (en) * 1980-10-10 1988-05-31 Inmos Corporation Folded bit line-shared sense amplifiers
JPH0115957B2 (en) * 1980-10-10 1989-03-22 Inmos Corp
JPS5823474A (en) * 1981-08-05 1983-02-12 Fujitsu Ltd Semiconductor memory storage
JPH0334663B2 (en) * 1981-08-05 1991-05-23 Fujitsu Ltd
JPS60145594A (en) * 1984-01-09 1985-08-01 Nec Corp Semiconductor memory device
JPS63153792A (en) * 1986-12-17 1988-06-27 Sharp Corp Semiconductor memory device
JPH03116486A (en) * 1990-05-18 1991-05-17 Hitachi Ltd Semiconductor memory device
JPH0765583A (en) * 1993-08-26 1995-03-10 Nec Corp Semiconductor storage device

Also Published As

Publication number Publication date
JPS6146918B2 (en) 1986-10-16

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