MY100601A - A semiconductor memory. - Google Patents

A semiconductor memory.

Info

Publication number
MY100601A
MY100601A MYPI87001787A MYPI19871787A MY100601A MY 100601 A MY100601 A MY 100601A MY PI87001787 A MYPI87001787 A MY PI87001787A MY PI19871787 A MYPI19871787 A MY PI19871787A MY 100601 A MY100601 A MY 100601A
Authority
MY
Malaysia
Prior art keywords
mosfet
conductivity type
circuit
semiconductor memory
dcr1
Prior art date
Application number
MYPI87001787A
Inventor
Kawamoto Hiroshi
Onishi Yoshiaki
Shinoda Takashi
Ogata Masahiro
Sakai Kikuo
Original Assignee
Hitachi Ltd
Hitachi Microcomputer System Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer System Ltd filed Critical Hitachi Ltd
Publication of MY100601A publication Critical patent/MY100601A/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Detection And Correction Of Errors (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A SEMICONDUCTOR MEMORY WHICH INCLUDES:(A)READ-ONLY MEMORY CELLS (M0-M6);(B)A SELECTING CIRCUIT(X-DCR1, X-DCR2, CW1-CW4),(Y-DCR1, Y-DCR2)(C)A DUMMY CELL (DC01, DC02)(D)A DYNAMIC DIFFERENTIAL AMPLIFIER CIRCUIT (SA0)(E)A CONTROL CIRCUIT (CSG).THE DYNAMIC DIFFERENTIAL AMPLIFIER CIRCUIT COMPRISES A FIRST MOSFET (Q3) OF FIRST CONDUCTIVITY TYPE TO THE GATE OF WHICH ONE INPUT TERMINAL OF A PAIR OF INPUT TERMINALS IS CONNECTED, A SECOND MOSFET (Q4) OF FIRST CONDUCTIVITY TYPE TO THE GATE OF WHICH THE OTHER INPUT TERMINAL OF THE PAIR OF INPUT TERMINALS IS CONNECTED, A SWITCHING MOSFET (Q6) PROVIDED BETWEEN FIRST ELECTRODES OF THE FIRST AND SECOND MOSFETS AND A FIRST POTENTIAL POINT AND CONTROLLED BY A CONTROL SIGNAL (PHI) (PA1) DELIVERED FROM THE CONTROL CIRCUIT, AND AN ACTIVE LOAD CIRCUIT (Q1-Q2) WHICH COMPRISES MOSFET OF SECOND CONDUCTIVITY TYPE AND WHICH IS PROVIDED BETWEEN SECOND ELECTRODES OF SAID FIRST AND SECOND MOSFETS AND A SECOND POTENTIAL POINT (VCC).
MYPI87001787A 1982-06-09 1987-09-21 A semiconductor memory. MY100601A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57097826A JPS58215797A (en) 1982-06-09 1982-06-09 Semiconductor storage device

Publications (1)

Publication Number Publication Date
MY100601A true MY100601A (en) 1990-12-15

Family

ID=14202526

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI87001787A MY100601A (en) 1982-06-09 1987-09-21 A semiconductor memory.

Country Status (2)

Country Link
JP (1) JPS58215797A (en)
MY (1) MY100601A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2849804B2 (en) * 1995-10-13 1999-01-27 合泰半導体股▲分▼有限公司 Memory access interface circuit and memory access method
KR0167298B1 (en) * 1995-12-20 1999-01-15 문정환 Fast access memory device
JP2009070509A (en) 2007-09-14 2009-04-02 Oki Electric Ind Co Ltd Semiconductor memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143134A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Semiconductor memory element
JPS55125597A (en) * 1979-03-19 1980-09-27 Nec Corp Semiconductor memory circuit

Also Published As

Publication number Publication date
JPS58215797A (en) 1983-12-15
JPH0560197B2 (en) 1993-09-01

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