JPS55129994A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55129994A
JPS55129994A JP3518079A JP3518079A JPS55129994A JP S55129994 A JPS55129994 A JP S55129994A JP 3518079 A JP3518079 A JP 3518079A JP 3518079 A JP3518079 A JP 3518079A JP S55129994 A JPS55129994 A JP S55129994A
Authority
JP
Japan
Prior art keywords
array
circuit
constitution
read
outputs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3518079A
Other languages
Japanese (ja)
Inventor
Joji Nokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3518079A priority Critical patent/JPS55129994A/en
Publication of JPS55129994A publication Critical patent/JPS55129994A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a high-speed and large-capacity semiconductor memory device by using a MIS transistor for the memory cell and by using a bipolar transistor for the peripheral circuit. CONSTITUTION:Memory cell array 11 has a j-row and i-column constitution. X address inputs X0-Xm and Y addresses Y0-Yn are inputted to address buffers 12x ans 12y respectively, and their outputs are supplied to address driver circuits 13x and 13y, and array 11 is driven by their outputs. Read/write control circuit 14 sends a read/write control signal and the anti-phase signal of a write enable signal to array 11 and output sense amplifier circuit 15 respectively. Differential amplifier 17 is connected to each pair of digit lines of array 11, and read signal amplified by amplifier 17 is set to a desired output level by circuit 15 and is sent to terminal 18. By this constitution, power consumption and the occupied area are reduced by constituting array 11 by FFs consisting of MIS transistors, and the high-speed operation is possible by using the bipolar transistor for the peripheral circuit.
JP3518079A 1979-03-26 1979-03-26 Semiconductor memory device Pending JPS55129994A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3518079A JPS55129994A (en) 1979-03-26 1979-03-26 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3518079A JPS55129994A (en) 1979-03-26 1979-03-26 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS55129994A true JPS55129994A (en) 1980-10-08

Family

ID=12434647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3518079A Pending JPS55129994A (en) 1979-03-26 1979-03-26 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55129994A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
JPS5853084A (en) * 1981-09-26 1983-03-29 Toshiba Corp Storage circuit
JPS5934656A (en) * 1982-08-20 1984-02-25 Toshiba Corp Sense amplifier for semiconductor storage device
JPS5968889A (en) * 1982-10-08 1984-04-18 Toshiba Corp Semiconductor storage device
JPS5978554A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Semiconductor integrated circuit device
JPS6028096A (en) * 1983-07-27 1985-02-13 Hitachi Ltd Static ram
JPS6051325A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Semiconductor integrated circuit device
JPS6051327A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Semiconductor integrated circuit device
JPS61278098A (en) * 1985-06-03 1986-12-08 Nippon Telegr & Teleph Corp <Ntt> Memory circuit
JPS6273487A (en) * 1985-09-25 1987-04-04 Toshiba Corp Sense amplifier circuit
JPS62222489A (en) * 1986-03-20 1987-09-30 Fujitsu Ltd Semiconductor memory device
US4713796A (en) * 1984-02-13 1987-12-15 Hitachi, Ltd. Semiconductor integrated circuit
JPS63171495A (en) * 1987-11-27 1988-07-15 Hitachi Ltd Sense system for ram
JPH02230597A (en) * 1989-08-21 1990-09-12 Toshiba Corp Sense amplifier for semiconductor memory
JPH06203574A (en) * 1993-08-01 1994-07-22 Hitachi Ltd Memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130332A (en) * 1974-04-01 1975-10-15
JPS5435180A (en) * 1977-08-23 1979-03-15 Matsushita Electric Ind Co Ltd Preparation of boron film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130332A (en) * 1974-04-01 1975-10-15
JPS5435180A (en) * 1977-08-23 1979-03-15 Matsushita Electric Ind Co Ltd Preparation of boron film

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241113B2 (en) * 1981-02-02 1990-09-14 Hitachi Seisakusho Kk
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
JPS5853084A (en) * 1981-09-26 1983-03-29 Toshiba Corp Storage circuit
JPS5934656A (en) * 1982-08-20 1984-02-25 Toshiba Corp Sense amplifier for semiconductor storage device
JPS5968889A (en) * 1982-10-08 1984-04-18 Toshiba Corp Semiconductor storage device
JPH0319639B2 (en) * 1982-10-08 1991-03-15 Tokyo Shibaura Electric Co
JPS5978554A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Semiconductor integrated circuit device
JPH0522320B2 (en) * 1982-10-27 1993-03-29 Hitachi Ltd
JPS6028096A (en) * 1983-07-27 1985-02-13 Hitachi Ltd Static ram
JPS6051325A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Semiconductor integrated circuit device
JPS6051327A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Semiconductor integrated circuit device
US4713796A (en) * 1984-02-13 1987-12-15 Hitachi, Ltd. Semiconductor integrated circuit
JPS61278098A (en) * 1985-06-03 1986-12-08 Nippon Telegr & Teleph Corp <Ntt> Memory circuit
JPS6273487A (en) * 1985-09-25 1987-04-04 Toshiba Corp Sense amplifier circuit
JPS62222489A (en) * 1986-03-20 1987-09-30 Fujitsu Ltd Semiconductor memory device
JPS63171495A (en) * 1987-11-27 1988-07-15 Hitachi Ltd Sense system for ram
JPH02230597A (en) * 1989-08-21 1990-09-12 Toshiba Corp Sense amplifier for semiconductor memory
JPH06203574A (en) * 1993-08-01 1994-07-22 Hitachi Ltd Memory

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