JPS6452288A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6452288A
JPS6452288A JP62208142A JP20814287A JPS6452288A JP S6452288 A JPS6452288 A JP S6452288A JP 62208142 A JP62208142 A JP 62208142A JP 20814287 A JP20814287 A JP 20814287A JP S6452288 A JPS6452288 A JP S6452288A
Authority
JP
Japan
Prior art keywords
collector line
inverse
constituting
differential amplifier
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62208142A
Other languages
Japanese (ja)
Other versions
JP2650107B2 (en
Inventor
Hideo Miwa
Kazuhiro Tsuruoka
Hiromichi Yamauchi
Hitoshi Endo
Masanori Odaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi ULSI Engineering Corp
Hitachi Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP62208142A priority Critical patent/JP2650107B2/en
Publication of JPS6452288A publication Critical patent/JPS6452288A/en
Application granted granted Critical
Publication of JP2650107B2 publication Critical patent/JP2650107B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To read a bipolar C-MOS type RAM or the like at high speed by constituting a cascade circuit connected to a complementary common collector line of a differential amplifier and two sets of emitter follower circuits. CONSTITUTION:A reading signal from a selected memory cell is transformed to a current signal to a complementary common line (r), the inverse of (r) by corresponding sense amplifiers SA0-SA3. The change of these current signals is connected to the base of transistors T9, T8 constituting the differential amplifier of the cascade circuit of a data output buffer DOB, inverted and amplified and negative fed back to the collector line (r), the inverse of (r) through the emitter follower circuit constituted of transistor T7, T10, resistances 2, 5 and constant current sources IS4, IS6. Thereby, the charging and the discharging operations of the collector line according to the inversion of the reading signal are shortened to attain the reading speed at high speed.
JP62208142A 1987-08-24 1987-08-24 Semiconductor integrated circuit device Expired - Fee Related JP2650107B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208142A JP2650107B2 (en) 1987-08-24 1987-08-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208142A JP2650107B2 (en) 1987-08-24 1987-08-24 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6452288A true JPS6452288A (en) 1989-02-28
JP2650107B2 JP2650107B2 (en) 1997-09-03

Family

ID=16551332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208142A Expired - Fee Related JP2650107B2 (en) 1987-08-24 1987-08-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2650107B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268292A (en) * 1991-02-22 1992-09-24 Nec Corp Semiconductor memory
JPH07130182A (en) * 1993-11-08 1995-05-19 Nec Corp Sense amplifier circuit
JP2008288953A (en) * 2007-05-18 2008-11-27 Sony Corp Solid-state image pickup device, image pickup device and electronic equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61246993A (en) * 1985-04-24 1986-11-04 Hitachi Ltd Semiconductor integrated circuit device
JPS6224493A (en) * 1985-03-20 1987-02-02 Hitachi Ltd Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224493A (en) * 1985-03-20 1987-02-02 Hitachi Ltd Semiconductor memory device
JPS61246993A (en) * 1985-04-24 1986-11-04 Hitachi Ltd Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268292A (en) * 1991-02-22 1992-09-24 Nec Corp Semiconductor memory
JPH07130182A (en) * 1993-11-08 1995-05-19 Nec Corp Sense amplifier circuit
JP2008288953A (en) * 2007-05-18 2008-11-27 Sony Corp Solid-state image pickup device, image pickup device and electronic equipment

Also Published As

Publication number Publication date
JP2650107B2 (en) 1997-09-03

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