JPS6466975A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS6466975A JPS6466975A JP22302987A JP22302987A JPS6466975A JP S6466975 A JPS6466975 A JP S6466975A JP 22302987 A JP22302987 A JP 22302987A JP 22302987 A JP22302987 A JP 22302987A JP S6466975 A JPS6466975 A JP S6466975A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- layer
- larger
- crystal growth
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain crystal growth surface completed by eliminating the grown melt as a surface for emitting light as LED by making the band gap energy of crystal layer which grows after formation of p-n junction larger than that of p-n junction position. CONSTITUTION:The conductivity type of crystal growth layer changes from n to p at 875 deg.C when the n-type GaAs single crystal substrate is brought into contact with the melt obtained by adding GaAs, Al, and Si to Ga at 930 deg.C and is cooled at a rate of 0.5 deg.C per minute. At this point if Al is added without separating the substrate, a crystal with Al mol fraction XAl which is larger than that in growing crystal on inversion begins to grow newly. Thus, after then n, p inversion, a crystal growth layer with even larger band gap energy can be obtained. For example, the Si dope AlGaAs LED can be completed by forming n and p-type electrode by separation when a growth surface layer of XAl1=0.1 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22302987A JPS6466975A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22302987A JPS6466975A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6466975A true JPS6466975A (en) | 1989-03-13 |
Family
ID=16791727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22302987A Pending JPS6466975A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6466975A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0448661A (en) * | 1990-06-14 | 1992-02-18 | Hitachi Cable Ltd | Gaalas light emitting diode and its manufacture |
-
1987
- 1987-09-08 JP JP22302987A patent/JPS6466975A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0448661A (en) * | 1990-06-14 | 1992-02-18 | Hitachi Cable Ltd | Gaalas light emitting diode and its manufacture |
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