JPS6466975A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS6466975A
JPS6466975A JP22302987A JP22302987A JPS6466975A JP S6466975 A JPS6466975 A JP S6466975A JP 22302987 A JP22302987 A JP 22302987A JP 22302987 A JP22302987 A JP 22302987A JP S6466975 A JPS6466975 A JP S6466975A
Authority
JP
Japan
Prior art keywords
crystal
layer
larger
crystal growth
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22302987A
Other languages
Japanese (ja)
Inventor
Takashi Tsubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP22302987A priority Critical patent/JPS6466975A/en
Publication of JPS6466975A publication Critical patent/JPS6466975A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain crystal growth surface completed by eliminating the grown melt as a surface for emitting light as LED by making the band gap energy of crystal layer which grows after formation of p-n junction larger than that of p-n junction position. CONSTITUTION:The conductivity type of crystal growth layer changes from n to p at 875 deg.C when the n-type GaAs single crystal substrate is brought into contact with the melt obtained by adding GaAs, Al, and Si to Ga at 930 deg.C and is cooled at a rate of 0.5 deg.C per minute. At this point if Al is added without separating the substrate, a crystal with Al mol fraction XAl which is larger than that in growing crystal on inversion begins to grow newly. Thus, after then n, p inversion, a crystal growth layer with even larger band gap energy can be obtained. For example, the Si dope AlGaAs LED can be completed by forming n and p-type electrode by separation when a growth surface layer of XAl1=0.1 is formed.
JP22302987A 1987-09-08 1987-09-08 Manufacture of semiconductor element Pending JPS6466975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22302987A JPS6466975A (en) 1987-09-08 1987-09-08 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22302987A JPS6466975A (en) 1987-09-08 1987-09-08 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS6466975A true JPS6466975A (en) 1989-03-13

Family

ID=16791727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22302987A Pending JPS6466975A (en) 1987-09-08 1987-09-08 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS6466975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448661A (en) * 1990-06-14 1992-02-18 Hitachi Cable Ltd Gaalas light emitting diode and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448661A (en) * 1990-06-14 1992-02-18 Hitachi Cable Ltd Gaalas light emitting diode and its manufacture

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