JPS57199287A - Semiconductor luminous element and manufacture thereof - Google Patents
Semiconductor luminous element and manufacture thereofInfo
- Publication number
- JPS57199287A JPS57199287A JP8417681A JP8417681A JPS57199287A JP S57199287 A JPS57199287 A JP S57199287A JP 8417681 A JP8417681 A JP 8417681A JP 8417681 A JP8417681 A JP 8417681A JP S57199287 A JPS57199287 A JP S57199287A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- specified
- solution
- liquidus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Abstract
PURPOSE:To manufacture the negative resistant semiconductor element provided with the reliable characteristics by a method wherein thickness of the semiconductor crystal layer is capacitated for arcing into the stripe type at specified region by means of the impressed voltage as specified. CONSTITUTION:The stripe type mesa 2 is formed on the n type GaAs substrate crystal 1 not yet immersed in the liquidus growing boat while the liquidus growing solution is specified to be the Ga solution containing the p type impurities saturated with As. Then the Ga solution is liquidus grown at the specified temperature and cooling speed separating the p type GaAs layer 14 on the n type GaAs substrate crystal 1. Then after the n type GaAlAs layer 4, p or n type GaAs layer 5, p type GaAlAs layer 6 are successively crystal formed by the solution contaiing the different dopants, the semiconductor crystal layer is separated at the central part of the cavity of the mesa 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8417681A JPS57199287A (en) | 1981-06-01 | 1981-06-01 | Semiconductor luminous element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8417681A JPS57199287A (en) | 1981-06-01 | 1981-06-01 | Semiconductor luminous element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57199287A true JPS57199287A (en) | 1982-12-07 |
Family
ID=13823173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8417681A Pending JPS57199287A (en) | 1981-06-01 | 1981-06-01 | Semiconductor luminous element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199287A (en) |
-
1981
- 1981-06-01 JP JP8417681A patent/JPS57199287A/en active Pending
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