JPS56116619A - Electrode formation to gallium aluminum arsenic crystal - Google Patents
Electrode formation to gallium aluminum arsenic crystalInfo
- Publication number
- JPS56116619A JPS56116619A JP2072580A JP2072580A JPS56116619A JP S56116619 A JPS56116619 A JP S56116619A JP 2072580 A JP2072580 A JP 2072580A JP 2072580 A JP2072580 A JP 2072580A JP S56116619 A JPS56116619 A JP S56116619A
- Authority
- JP
- Japan
- Prior art keywords
- electrode formation
- gallium aluminum
- crystal
- aluminum arsenic
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain sufficient ohmic contact on a Ga1-xAlAs surface at 200 deg.C or more by composing electrode metals of Ni, Ge and Au. CONSTITUTION:An N type Ga1-xAlxAs 12 added with Te is formed by liquidus epitaxial on a semi-insulating substrate 11. In evaporating electrodes 13 on the layer 12, Au-Ge(12%)-Ni(4%) is used as a material and the substrate is maintained at 200 deg.C or more. In the temperature of 200 deg.C or more, a thin oxide film formed on the GaAlAs crystal surface is also destructed to adhere electrode metals to the crystal surface. Therefore, sufficient ohmic contact will be obtained. In this composition, a GaAs layer for connection is not required even if mixed crystal ratio of AlAs is 0.37 or more. The yield will be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2072580A JPS56116619A (en) | 1980-02-20 | 1980-02-20 | Electrode formation to gallium aluminum arsenic crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2072580A JPS56116619A (en) | 1980-02-20 | 1980-02-20 | Electrode formation to gallium aluminum arsenic crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116619A true JPS56116619A (en) | 1981-09-12 |
Family
ID=12035146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2072580A Pending JPS56116619A (en) | 1980-02-20 | 1980-02-20 | Electrode formation to gallium aluminum arsenic crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116619A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2546334A1 (en) * | 1983-05-21 | 1984-11-23 | Telefunken Electronic Gmbh | ALLOY CONTACT FOR SEMICONDUCTOR MATERIAL WITH N-CONDUCTIVE GALLIUM-ALUMINUM ARSENIDE |
JPS62185379A (en) * | 1986-02-08 | 1987-08-13 | Toyota Central Res & Dev Lab Inc | Electromechanical transducer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5194765A (en) * | 1975-02-19 | 1976-08-19 | Kagobutsuhandotaino oomuseidenkyoku | |
JPS5364467A (en) * | 1976-11-20 | 1978-06-08 | Sony Corp | Electrode |
-
1980
- 1980-02-20 JP JP2072580A patent/JPS56116619A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5194765A (en) * | 1975-02-19 | 1976-08-19 | Kagobutsuhandotaino oomuseidenkyoku | |
JPS5364467A (en) * | 1976-11-20 | 1978-06-08 | Sony Corp | Electrode |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2546334A1 (en) * | 1983-05-21 | 1984-11-23 | Telefunken Electronic Gmbh | ALLOY CONTACT FOR SEMICONDUCTOR MATERIAL WITH N-CONDUCTIVE GALLIUM-ALUMINUM ARSENIDE |
JPS62185379A (en) * | 1986-02-08 | 1987-08-13 | Toyota Central Res & Dev Lab Inc | Electromechanical transducer |
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