JPS56116619A - Electrode formation to gallium aluminum arsenic crystal - Google Patents

Electrode formation to gallium aluminum arsenic crystal

Info

Publication number
JPS56116619A
JPS56116619A JP2072580A JP2072580A JPS56116619A JP S56116619 A JPS56116619 A JP S56116619A JP 2072580 A JP2072580 A JP 2072580A JP 2072580 A JP2072580 A JP 2072580A JP S56116619 A JPS56116619 A JP S56116619A
Authority
JP
Japan
Prior art keywords
electrode formation
gallium aluminum
crystal
aluminum arsenic
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2072580A
Other languages
Japanese (ja)
Inventor
Haruyoshi Yamanaka
Masaru Kazumura
Kazunari Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2072580A priority Critical patent/JPS56116619A/en
Publication of JPS56116619A publication Critical patent/JPS56116619A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain sufficient ohmic contact on a Ga1-xAlAs surface at 200 deg.C or more by composing electrode metals of Ni, Ge and Au. CONSTITUTION:An N type Ga1-xAlxAs 12 added with Te is formed by liquidus epitaxial on a semi-insulating substrate 11. In evaporating electrodes 13 on the layer 12, Au-Ge(12%)-Ni(4%) is used as a material and the substrate is maintained at 200 deg.C or more. In the temperature of 200 deg.C or more, a thin oxide film formed on the GaAlAs crystal surface is also destructed to adhere electrode metals to the crystal surface. Therefore, sufficient ohmic contact will be obtained. In this composition, a GaAs layer for connection is not required even if mixed crystal ratio of AlAs is 0.37 or more. The yield will be improved.
JP2072580A 1980-02-20 1980-02-20 Electrode formation to gallium aluminum arsenic crystal Pending JPS56116619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2072580A JPS56116619A (en) 1980-02-20 1980-02-20 Electrode formation to gallium aluminum arsenic crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2072580A JPS56116619A (en) 1980-02-20 1980-02-20 Electrode formation to gallium aluminum arsenic crystal

Publications (1)

Publication Number Publication Date
JPS56116619A true JPS56116619A (en) 1981-09-12

Family

ID=12035146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2072580A Pending JPS56116619A (en) 1980-02-20 1980-02-20 Electrode formation to gallium aluminum arsenic crystal

Country Status (1)

Country Link
JP (1) JPS56116619A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2546334A1 (en) * 1983-05-21 1984-11-23 Telefunken Electronic Gmbh ALLOY CONTACT FOR SEMICONDUCTOR MATERIAL WITH N-CONDUCTIVE GALLIUM-ALUMINUM ARSENIDE
JPS62185379A (en) * 1986-02-08 1987-08-13 Toyota Central Res & Dev Lab Inc Electromechanical transducer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194765A (en) * 1975-02-19 1976-08-19 Kagobutsuhandotaino oomuseidenkyoku
JPS5364467A (en) * 1976-11-20 1978-06-08 Sony Corp Electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194765A (en) * 1975-02-19 1976-08-19 Kagobutsuhandotaino oomuseidenkyoku
JPS5364467A (en) * 1976-11-20 1978-06-08 Sony Corp Electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2546334A1 (en) * 1983-05-21 1984-11-23 Telefunken Electronic Gmbh ALLOY CONTACT FOR SEMICONDUCTOR MATERIAL WITH N-CONDUCTIVE GALLIUM-ALUMINUM ARSENIDE
JPS62185379A (en) * 1986-02-08 1987-08-13 Toyota Central Res & Dev Lab Inc Electromechanical transducer

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