JPS5629381A - Compound-semiconductor light emitting element containing garium and manufacture thereof - Google Patents

Compound-semiconductor light emitting element containing garium and manufacture thereof

Info

Publication number
JPS5629381A
JPS5629381A JP10403179A JP10403179A JPS5629381A JP S5629381 A JPS5629381 A JP S5629381A JP 10403179 A JP10403179 A JP 10403179A JP 10403179 A JP10403179 A JP 10403179A JP S5629381 A JPS5629381 A JP S5629381A
Authority
JP
Japan
Prior art keywords
layer
atoms
electrode
light emitting
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10403179A
Other languages
Japanese (ja)
Inventor
Masato Yamashita
Yasuhisa Oana
Norio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10403179A priority Critical patent/JPS5629381A/en
Publication of JPS5629381A publication Critical patent/JPS5629381A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Abstract

PURPOSE:To obtain an electrode whose bonding property is very excellent without losing the ohmic property at all by specifying the materials and compositions of the electrode which is formed on a P type layer of the compound-semiconductor light emitting element containing Ga. CONSTITUTION:A P type GaP layer 22 is epitaxially grown in a liquid phase on a substrate 21 containing Ga such as N type GaP, GaAs, CaAsP, and the like, and a PN junction 23 is yielded. N-side electrodes 25 with a specified pattern comprising Au-Si alloy are formed on the back surface of the substrate 21. Then, a P-side electrode of a specified pattern is formed on a layer 22. In this case, the materials are selected as follows. An alloy layer 24a, which comprises the main component of Au, and Be or Zn, is used as the lowest lsyer; a metal layer 24b such as Ta, Mo, W, Nb, and the like is used as the medium layer; an Au layer 24c is used as the uppermost layer; thereby the layered electrode is formed. At this time, the ratio of the strength of the secondary ions of Ga atoms against A atoms in the vicinity of the surface of the Au layer is 0.2 or less, and the ratio of the strength of the Be atoms or Zn atoms against the Au atoms is 0.3 or less.
JP10403179A 1979-08-17 1979-08-17 Compound-semiconductor light emitting element containing garium and manufacture thereof Pending JPS5629381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10403179A JPS5629381A (en) 1979-08-17 1979-08-17 Compound-semiconductor light emitting element containing garium and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10403179A JPS5629381A (en) 1979-08-17 1979-08-17 Compound-semiconductor light emitting element containing garium and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5629381A true JPS5629381A (en) 1981-03-24

Family

ID=14369863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10403179A Pending JPS5629381A (en) 1979-08-17 1979-08-17 Compound-semiconductor light emitting element containing garium and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5629381A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0386775A1 (en) * 1989-03-10 1990-09-12 Sumitomo Electric Industries, Ltd. Electrode structure for III-V compound semiconductor element and method of manufacturing the same
US5057454A (en) * 1989-10-23 1991-10-15 Sumitomo Electric Industries, Ltd. Process for producing ohmic electrode for p-type cubic system boron nitride
US5187560A (en) * 1989-11-28 1993-02-16 Sumitomo Electric Industries, Ltd. Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
US5412249A (en) * 1993-03-31 1995-05-02 Kabushiki Kaisha Toshiba Semiconductor device having layered electrode
US5790577A (en) * 1995-10-05 1998-08-04 Nippondenso Co., Ltd. High output semiconductor laser element having robust electrode structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0386775A1 (en) * 1989-03-10 1990-09-12 Sumitomo Electric Industries, Ltd. Electrode structure for III-V compound semiconductor element and method of manufacturing the same
US5057454A (en) * 1989-10-23 1991-10-15 Sumitomo Electric Industries, Ltd. Process for producing ohmic electrode for p-type cubic system boron nitride
US5187560A (en) * 1989-11-28 1993-02-16 Sumitomo Electric Industries, Ltd. Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
US5412249A (en) * 1993-03-31 1995-05-02 Kabushiki Kaisha Toshiba Semiconductor device having layered electrode
US5790577A (en) * 1995-10-05 1998-08-04 Nippondenso Co., Ltd. High output semiconductor laser element having robust electrode structure

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