JPS5568689A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5568689A
JPS5568689A JP14191878A JP14191878A JPS5568689A JP S5568689 A JPS5568689 A JP S5568689A JP 14191878 A JP14191878 A JP 14191878A JP 14191878 A JP14191878 A JP 14191878A JP S5568689 A JPS5568689 A JP S5568689A
Authority
JP
Japan
Prior art keywords
layer
thick
semiconductor laser
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14191878A
Other languages
Japanese (ja)
Other versions
JPS6243556B2 (en
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14191878A priority Critical patent/JPS5568689A/en
Publication of JPS5568689A publication Critical patent/JPS5568689A/en
Publication of JPS6243556B2 publication Critical patent/JPS6243556B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To improve the reliability of a semiconductor laser element by forming a metallic layer by Cr layer, Al layer, Ti layer, Pt layer and Au layer controlled at their thicknesses as an anode side electrode to thereby enhance the heat resistance thereof.
CONSTITUTION: n-Type AlXGa1-XAs layer 2, undoped AlYGa1-YAs active layer 3, n-type AlXGa1-XAs layer 4, and p-type GaAs layer 5 are laminated and grown on an n-type GaAs substrate 1 in a double hetero structure. Then, A Zn diffused stripe region 6 impregnated into the layer 4 is provided at the central region of the layer 5, and AuGe-AuNi layer 7 and Au layer 8 are coated as laminated electrodes on the back surface of the substrate 1. On the other hand, Al layer 10 of 3∼5μm thick for retaining a heat sink and electrode thickness, Ti layer 11 of 500∼700Å thick, Pt layer 12 of 1500∼2000Å thick for preventing reaction of Al with Au, and Au layer 13 of 2000∼3000Å thick for mounting on the heat sink are sequentially coated in this order on the layer 5 containing the region 6 as electrodes.
COPYRIGHT: (C)1980,JPO&Japio
JP14191878A 1978-11-17 1978-11-17 Semiconductor laser element Granted JPS5568689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14191878A JPS5568689A (en) 1978-11-17 1978-11-17 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14191878A JPS5568689A (en) 1978-11-17 1978-11-17 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5568689A true JPS5568689A (en) 1980-05-23
JPS6243556B2 JPS6243556B2 (en) 1987-09-14

Family

ID=15303184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14191878A Granted JPS5568689A (en) 1978-11-17 1978-11-17 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5568689A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680768A (en) * 1984-07-19 1987-07-14 Sanyo Electric Co., Ltd. Semiconductor laser with a quantum well layer including a disordered region

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141980A (en) * 1974-10-05 1976-04-08 Nippon Electric Co CHUNYUGATA HANDOTAIREEZA SOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141980A (en) * 1974-10-05 1976-04-08 Nippon Electric Co CHUNYUGATA HANDOTAIREEZA SOCHI

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680768A (en) * 1984-07-19 1987-07-14 Sanyo Electric Co., Ltd. Semiconductor laser with a quantum well layer including a disordered region

Also Published As

Publication number Publication date
JPS6243556B2 (en) 1987-09-14

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