JPS54132182A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54132182A JPS54132182A JP4060478A JP4060478A JPS54132182A JP S54132182 A JPS54132182 A JP S54132182A JP 4060478 A JP4060478 A JP 4060478A JP 4060478 A JP4060478 A JP 4060478A JP S54132182 A JPS54132182 A JP S54132182A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- insulator film
- sputtering
- cvd method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain the laser featuring good characteristics by forming the mask to be provided on Ga1-xInxAs1-yPy (x, y = 0.7 ∼ 1.0) semiconductor substrate via the laminated insulator film formed by the anodic oxidation and sputtering or the CVD method.
CONSTITUTION: Ga1-uInuAs1-vPv (u = 0.27, v = 0.42) layer 2 and the Ga1-xInxAs1-yPy (x, y = 0.7 ∼ 1.0) layer 3 are grown on N-type InP semiconductor substrate 1. Then the anodic oxidation is applied to layer 3 to form insulator film 21 composed of the oxide of layer 3, and insulator film 22 such as SiO2, Si3N4, Al2O3 or the like is stacked on film 21 via the sputtering or the CVD method. After this, opening 23 is drilled to such laminated film 24, and P-type region 9 is formed by diffusion within layer 3 with electrode 7 coated extending on film 24 plus electrode 8 coated on the back of substrate 1 respectively. In this way, no internal strain is caused within layer 3, thus obtaining the current stenosis type laser featuring characteristics.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4060478A JPS54132182A (en) | 1978-04-06 | 1978-04-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4060478A JPS54132182A (en) | 1978-04-06 | 1978-04-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54132182A true JPS54132182A (en) | 1979-10-13 |
Family
ID=12585109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4060478A Pending JPS54132182A (en) | 1978-04-06 | 1978-04-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54132182A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63177495A (en) * | 1987-01-16 | 1988-07-21 | Sharp Corp | Semiconductor laser device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5111379A (en) * | 1974-07-17 | 1976-01-29 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
-
1978
- 1978-04-06 JP JP4060478A patent/JPS54132182A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5111379A (en) * | 1974-07-17 | 1976-01-29 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63177495A (en) * | 1987-01-16 | 1988-07-21 | Sharp Corp | Semiconductor laser device |
JPH0511677B2 (en) * | 1987-01-16 | 1993-02-16 | Sharp Kk |
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