JPS54132182A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54132182A
JPS54132182A JP4060478A JP4060478A JPS54132182A JP S54132182 A JPS54132182 A JP S54132182A JP 4060478 A JP4060478 A JP 4060478A JP 4060478 A JP4060478 A JP 4060478A JP S54132182 A JPS54132182 A JP S54132182A
Authority
JP
Japan
Prior art keywords
layer
film
insulator film
sputtering
cvd method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4060478A
Other languages
Japanese (ja)
Inventor
Koichi Sugiyama
Kunishige Oe
Seigo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4060478A priority Critical patent/JPS54132182A/en
Publication of JPS54132182A publication Critical patent/JPS54132182A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain the laser featuring good characteristics by forming the mask to be provided on Ga1-xInxAs1-yPy (x, y = 0.7 ∼ 1.0) semiconductor substrate via the laminated insulator film formed by the anodic oxidation and sputtering or the CVD method.
CONSTITUTION: Ga1-uInuAs1-vPv (u = 0.27, v = 0.42) layer 2 and the Ga1-xInxAs1-yPy (x, y = 0.7 ∼ 1.0) layer 3 are grown on N-type InP semiconductor substrate 1. Then the anodic oxidation is applied to layer 3 to form insulator film 21 composed of the oxide of layer 3, and insulator film 22 such as SiO2, Si3N4, Al2O3 or the like is stacked on film 21 via the sputtering or the CVD method. After this, opening 23 is drilled to such laminated film 24, and P-type region 9 is formed by diffusion within layer 3 with electrode 7 coated extending on film 24 plus electrode 8 coated on the back of substrate 1 respectively. In this way, no internal strain is caused within layer 3, thus obtaining the current stenosis type laser featuring characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP4060478A 1978-04-06 1978-04-06 Manufacture of semiconductor device Pending JPS54132182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4060478A JPS54132182A (en) 1978-04-06 1978-04-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4060478A JPS54132182A (en) 1978-04-06 1978-04-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54132182A true JPS54132182A (en) 1979-10-13

Family

ID=12585109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4060478A Pending JPS54132182A (en) 1978-04-06 1978-04-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54132182A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177495A (en) * 1987-01-16 1988-07-21 Sharp Corp Semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111379A (en) * 1974-07-17 1976-01-29 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111379A (en) * 1974-07-17 1976-01-29 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177495A (en) * 1987-01-16 1988-07-21 Sharp Corp Semiconductor laser device
JPH0511677B2 (en) * 1987-01-16 1993-02-16 Sharp Kk

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