JPS5783069A - Manufacture of photoreceiving device - Google Patents
Manufacture of photoreceiving deviceInfo
- Publication number
- JPS5783069A JPS5783069A JP55158437A JP15843780A JPS5783069A JP S5783069 A JPS5783069 A JP S5783069A JP 55158437 A JP55158437 A JP 55158437A JP 15843780 A JP15843780 A JP 15843780A JP S5783069 A JPS5783069 A JP S5783069A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoreceiving
- mask
- inp
- ypy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent the production of faulty devices and to manufacture the device of improved quality by a method wherein a photoreceiving device of the In1-xGaxAs1-yPy family topped with an InP layer is provided with an In1-uGau As1-rPr serving as diffusion mask and junction layer. CONSTITUTION:Piled one upon another on an InP substrate 14 and an In1-xGax As1-yPy photoabsorbing layer 13, a low concentration InP layer 12, and high concentration InP window-and-multiplier layer 11 meeting the conditions 0<x<= 0.47, 0<y<=1, and x=0.47(1-y). Next, an In1-uGauAS1-rPr layer 15 [u=0.47(1-r), 0<u<=0.47, 0<r<=1], which is patterned by an SiO2 mask. Then the mask is removed and Cd is thermally diffused to form a photoreceiving section 18 and a guard ring 17. A mask is again placed on the photoreceiving section 18 and the InP layer 11 is etched away using a part of the guard ring 17. Then evaporated AuZn is deposited on the film 15 surrounding the photoreceiving section 18 thereby creating an alloy layer out of which electrodes 19 are selectively formed. This eliminates heat caused distortion and penetrating electrodes as causes for fualty products and photoreceiving devices can be realized with their component parts superior as regards withstand voltage, amplification, and dark current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158437A JPS5783069A (en) | 1980-11-11 | 1980-11-11 | Manufacture of photoreceiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158437A JPS5783069A (en) | 1980-11-11 | 1980-11-11 | Manufacture of photoreceiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5783069A true JPS5783069A (en) | 1982-05-24 |
Family
ID=15671739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55158437A Pending JPS5783069A (en) | 1980-11-11 | 1980-11-11 | Manufacture of photoreceiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783069A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254674A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Semiconductor photo receptor |
| US5185272A (en) * | 1990-04-16 | 1993-02-09 | Fujitsu Limited | Method of producing semiconductor device having light receiving element with capacitance |
| JP2021034644A (en) * | 2019-08-28 | 2021-03-01 | 住友電気工業株式会社 | Light receiving element |
-
1980
- 1980-11-11 JP JP55158437A patent/JPS5783069A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254674A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Semiconductor photo receptor |
| US5185272A (en) * | 1990-04-16 | 1993-02-09 | Fujitsu Limited | Method of producing semiconductor device having light receiving element with capacitance |
| JP2021034644A (en) * | 2019-08-28 | 2021-03-01 | 住友電気工業株式会社 | Light receiving element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5710992A (en) | Semiconductor device and manufacture therefor | |
| JPS5783069A (en) | Manufacture of photoreceiving device | |
| JPS55102267A (en) | Semiconductor control element | |
| JPS54113273A (en) | Field effect-type switching element | |
| JPS5658286A (en) | Forming method for guard ring of avalanche photodiode | |
| JPS5753728A (en) | Display device | |
| JPS5521192A (en) | Manufacture of semiconductor device | |
| JPS5558526A (en) | Manufacture of semiconductor device | |
| JPS5555526A (en) | Method of manufacturing electrode | |
| JPS5571074A (en) | Manufacture of semiconductor device | |
| JPS56157083A (en) | Manufacture of semiconductor laser | |
| JPS5595329A (en) | Preparation of semiconductor device | |
| JPS54132182A (en) | Manufacture of semiconductor device | |
| JPS5712551A (en) | Forming method for ohmic electrode | |
| JPS57111071A (en) | Manufacture of inp/ingaasp photodetector | |
| JPS5475275A (en) | Manufacture of semiconductor device | |
| JPS57107040A (en) | Manufacture of semiconductor device | |
| JPS55128866A (en) | Method of fabricating semiconductor element | |
| JPS57122533A (en) | Semiconductor device | |
| JPS5640256A (en) | Manufacture of semiconductor device | |
| JPS57181143A (en) | Manufacture of semiconductor device | |
| JPS5580386A (en) | Manufacture of semiconductor light emitting device | |
| JPS55162225A (en) | Preparation of semiconductor device | |
| JPS5633852A (en) | Manufacture of semiconductor device | |
| JPS56125852A (en) | Manufacture of semiconductor device |