JPS54101664A - Formation of liquid-phase epitaxial grown layer - Google Patents

Formation of liquid-phase epitaxial grown layer

Info

Publication number
JPS54101664A
JPS54101664A JP814778A JP814778A JPS54101664A JP S54101664 A JPS54101664 A JP S54101664A JP 814778 A JP814778 A JP 814778A JP 814778 A JP814778 A JP 814778A JP S54101664 A JPS54101664 A JP S54101664A
Authority
JP
Japan
Prior art keywords
liquid
phase epitaxial
grown layer
epitaxial grown
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP814778A
Other languages
Japanese (ja)
Other versions
JPS5538820B2 (en
Inventor
Shinichi Takahashi
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP814778A priority Critical patent/JPS54101664A/en
Publication of JPS54101664A publication Critical patent/JPS54101664A/en
Publication of JPS5538820B2 publication Critical patent/JPS5538820B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To form well a liquid-phase epitaxial grown layer consisting of InP without meltback, by making the main face of a semiconductor substrate of In1-xGax AsyP1-y in the formation method of the liquid-phase epitaxial grown layer.
CONSTITUTION: Liquid-phase epitaxial grown layer 12 consisting of In1-xGaxAsy P1-y is formed on semiconductor substrate main body 11 consisting of InP, and groove 14 is provided on upper face 13 of layer 12. Semiconductor substrate 10 produced in this manner is arranged in an inactive gas atmosphere to form liquid- phase epitaxial grown layer 15 consisting of InP on the surface of substrate 10.
COPYRIGHT: (C)1979,JPO&Japio
JP814778A 1978-01-27 1978-01-27 Formation of liquid-phase epitaxial grown layer Granted JPS54101664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP814778A JPS54101664A (en) 1978-01-27 1978-01-27 Formation of liquid-phase epitaxial grown layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP814778A JPS54101664A (en) 1978-01-27 1978-01-27 Formation of liquid-phase epitaxial grown layer

Publications (2)

Publication Number Publication Date
JPS54101664A true JPS54101664A (en) 1979-08-10
JPS5538820B2 JPS5538820B2 (en) 1980-10-07

Family

ID=11685187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP814778A Granted JPS54101664A (en) 1978-01-27 1978-01-27 Formation of liquid-phase epitaxial grown layer

Country Status (1)

Country Link
JP (1) JPS54101664A (en)

Also Published As

Publication number Publication date
JPS5538820B2 (en) 1980-10-07

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