JPS5650508A - Manufacture monocrystalling semiconductor substrate and its - Google Patents

Manufacture monocrystalling semiconductor substrate and its

Info

Publication number
JPS5650508A
JPS5650508A JP12539579A JP12539579A JPS5650508A JP S5650508 A JPS5650508 A JP S5650508A JP 12539579 A JP12539579 A JP 12539579A JP 12539579 A JP12539579 A JP 12539579A JP S5650508 A JPS5650508 A JP S5650508A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
manufacture
monocrystalling
monocrystalline semiconductor
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12539579A
Other languages
Japanese (ja)
Inventor
Akira Kanai
Hiroo Tochikubo
Yushi Kase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12539579A priority Critical patent/JPS5650508A/en
Publication of JPS5650508A publication Critical patent/JPS5650508A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To obtain a semiconductor substrate having extremely scanty density of carbon, oxygen and having no generation of swirl defect by a method wherein a monocrystalline semiconductor substrate is formed only with an epitaxial growth layer. CONSTITUTION:An epitaxial growth layer 3 is formed on the main face of a monocrystalline semiconductor plane material 1, and the material 1 is removed to manufacture a monocrystalline semiconductor substrate 4 consisting of only the epitaxial growth layer 3. Accordingly, a monocrystalline semiconductor substrate having extremely scanty density of carbon, oxygen and having no generation of swirl defect can be obtained.
JP12539579A 1979-10-01 1979-10-01 Manufacture monocrystalling semiconductor substrate and its Pending JPS5650508A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12539579A JPS5650508A (en) 1979-10-01 1979-10-01 Manufacture monocrystalling semiconductor substrate and its

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12539579A JPS5650508A (en) 1979-10-01 1979-10-01 Manufacture monocrystalling semiconductor substrate and its

Publications (1)

Publication Number Publication Date
JPS5650508A true JPS5650508A (en) 1981-05-07

Family

ID=14909071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12539579A Pending JPS5650508A (en) 1979-10-01 1979-10-01 Manufacture monocrystalling semiconductor substrate and its

Country Status (1)

Country Link
JP (1) JPS5650508A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732289B2 (en) * 2005-07-05 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a MOS device with an additional layer
JP2021019164A (en) * 2019-07-23 2021-02-15 株式会社Sumco Method for manufacturing epitaxial silicon wafer, epitaxial silicon wafer, method for manufacturing silicon wafer, silicon wafer, and method for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732289B2 (en) * 2005-07-05 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a MOS device with an additional layer
JP2021019164A (en) * 2019-07-23 2021-02-15 株式会社Sumco Method for manufacturing epitaxial silicon wafer, epitaxial silicon wafer, method for manufacturing silicon wafer, silicon wafer, and method for manufacturing semiconductor device

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