JPS5262185A - Method of growing platy single crystal - Google Patents

Method of growing platy single crystal

Info

Publication number
JPS5262185A
JPS5262185A JP13794775A JP13794775A JPS5262185A JP S5262185 A JPS5262185 A JP S5262185A JP 13794775 A JP13794775 A JP 13794775A JP 13794775 A JP13794775 A JP 13794775A JP S5262185 A JPS5262185 A JP S5262185A
Authority
JP
Japan
Prior art keywords
single crystal
growing
platy
fused
platy single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13794775A
Other languages
Japanese (ja)
Inventor
Shinichiro Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13794775A priority Critical patent/JPS5262185A/en
Publication of JPS5262185A publication Critical patent/JPS5262185A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: The upper part of a single crystal material is fused and the surface of the fused part is raised according to the degree of pulling single crystal so that the the surface of the fused part and the surface of platy single crystal pulled can be continually accorded to obtain platy single crystal with a little lattice defect and uniform thickness.
COPYRIGHT: (C)1977,JPO&Japio
JP13794775A 1975-11-17 1975-11-17 Method of growing platy single crystal Pending JPS5262185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13794775A JPS5262185A (en) 1975-11-17 1975-11-17 Method of growing platy single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13794775A JPS5262185A (en) 1975-11-17 1975-11-17 Method of growing platy single crystal

Publications (1)

Publication Number Publication Date
JPS5262185A true JPS5262185A (en) 1977-05-23

Family

ID=15210414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13794775A Pending JPS5262185A (en) 1975-11-17 1975-11-17 Method of growing platy single crystal

Country Status (1)

Country Link
JP (1) JPS5262185A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570088A1 (en) * 1984-09-12 1986-03-14 Us Energy APPARATUS AND METHOD FOR HORIZONTALLY GROWING CRYSTALS OF SHEET SILICON WITHOUT CRUSH

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570088A1 (en) * 1984-09-12 1986-03-14 Us Energy APPARATUS AND METHOD FOR HORIZONTALLY GROWING CRYSTALS OF SHEET SILICON WITHOUT CRUSH
US4650541A (en) * 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

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