JPS54117679A - Liquid-phase epitaxial growth unit - Google Patents
Liquid-phase epitaxial growth unitInfo
- Publication number
- JPS54117679A JPS54117679A JP2480678A JP2480678A JPS54117679A JP S54117679 A JPS54117679 A JP S54117679A JP 2480678 A JP2480678 A JP 2480678A JP 2480678 A JP2480678 A JP 2480678A JP S54117679 A JPS54117679 A JP S54117679A
- Authority
- JP
- Japan
- Prior art keywords
- melting liquid
- liquid
- composition
- transitional
- continuously
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To perform an epitaxial growth having a region, where the composition is transitional continuously, by mixture and diffusion generated in boundaries between melting liquid by leading melting liquid different in composition into a growing room simultaneously.
CONSTITUTION: After the completion of the growth dependent upon melting liquid 2, slider 9 is moved to link liquid tanks 5a and 5b with each other in 12. Next, when slider 8 is moved to the left and pressing-out pieces 7b and 7c are depressed simultaneously, melting liquid 3a and 3b in tanks 5a and 5b ress out processed melting liquid 2 into tank 14. Simultaneously, melting liquid 3a and 3b pressed out newly are pressed into growing room 11 while generating mixture and diffusion in the boundary part and act on crystal substrate 10 as melting liquid having a continuously transitional composition distribution in room 11. As a result, a region where the composition is continuously transitional is formed in the epi-grown layer on substrate 10.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2480678A JPS54117679A (en) | 1978-03-03 | 1978-03-03 | Liquid-phase epitaxial growth unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2480678A JPS54117679A (en) | 1978-03-03 | 1978-03-03 | Liquid-phase epitaxial growth unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54117679A true JPS54117679A (en) | 1979-09-12 |
Family
ID=12148427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2480678A Pending JPS54117679A (en) | 1978-03-03 | 1978-03-03 | Liquid-phase epitaxial growth unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54117679A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4397260A (en) * | 1980-04-23 | 1983-08-09 | U.S. Philips Corporation | Boat for the epitaxial growth of several layers from the liquid phase |
JP2012235017A (en) * | 2011-05-06 | 2012-11-29 | Shimane Univ | Thermoelectric conversion material manufacturing apparatus and thermoelectric conversion material manufacturing method |
-
1978
- 1978-03-03 JP JP2480678A patent/JPS54117679A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4397260A (en) * | 1980-04-23 | 1983-08-09 | U.S. Philips Corporation | Boat for the epitaxial growth of several layers from the liquid phase |
JP2012235017A (en) * | 2011-05-06 | 2012-11-29 | Shimane Univ | Thermoelectric conversion material manufacturing apparatus and thermoelectric conversion material manufacturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS543479A (en) | Semiconductor device and its manufacture | |
JPS54117679A (en) | Liquid-phase epitaxial growth unit | |
JPS52153913A (en) | Preparation of dimethylaminoethylmethacrylate | |
JPS5440073A (en) | Film forming method | |
JPS5376688A (en) | Production of semiconductor device | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS51140561A (en) | Liquid phase epitaxial growing method | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS52135264A (en) | Liquid phase epitaxial growth method | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS5555511A (en) | Method of epitaxial growth at liquid phase | |
JPS52114268A (en) | Selective liquid growing method | |
JPS5262185A (en) | Method of growing platy single crystal | |
JPS5288276A (en) | Liquid-phase epitaxial growth | |
JPS52115784A (en) | Liquid phase epitaxial growth | |
JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
JPS5286058A (en) | Liquid phase epitaxial growth | |
JPS5299067A (en) | Semiconductor crystal multilayer continuous growing method | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS51111475A (en) | Method of liquid phase epitaxial growth by temperature depression | |
JPS5395570A (en) | Forming method of epitaxial layer | |
JPS51111057A (en) | Crystal growing device | |
JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
JPS5582483A (en) | Semiconductor laser device and its preparation | |
JPS545654A (en) | Epitaxial wafer for production of compound semiconductor device and manufacture of the same |