JPS5252186A - Method of pulling up semiconductor single crystal of high decompositio n pressure compound - Google Patents

Method of pulling up semiconductor single crystal of high decompositio n pressure compound

Info

Publication number
JPS5252186A
JPS5252186A JP13450076A JP13450076A JPS5252186A JP S5252186 A JPS5252186 A JP S5252186A JP 13450076 A JP13450076 A JP 13450076A JP 13450076 A JP13450076 A JP 13450076A JP S5252186 A JPS5252186 A JP S5252186A
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor single
decompositio
pulling
pressure compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13450076A
Other languages
Japanese (ja)
Inventor
Takashi Suzuki
Shinichi Akai
Yasushi Hirata
Katsunosuke Aoyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP13450076A priority Critical patent/JPS5252186A/en
Publication of JPS5252186A publication Critical patent/JPS5252186A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: Uniform sectional, large-sized semiconductor single crystal of a high decomposition pressure compund is pulled up by applying conventional resistance heating in Si and maintaining the temperature of the surface of a raw material liquid within an optimum range.
COPYRIGHT: (C)1977,JPO&Japio
JP13450076A 1976-11-08 1976-11-08 Method of pulling up semiconductor single crystal of high decompositio n pressure compound Pending JPS5252186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13450076A JPS5252186A (en) 1976-11-08 1976-11-08 Method of pulling up semiconductor single crystal of high decompositio n pressure compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13450076A JPS5252186A (en) 1976-11-08 1976-11-08 Method of pulling up semiconductor single crystal of high decompositio n pressure compound

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4057772A Division JPS5237995B2 (en) 1972-04-22 1972-04-22

Publications (1)

Publication Number Publication Date
JPS5252186A true JPS5252186A (en) 1977-04-26

Family

ID=15129765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13450076A Pending JPS5252186A (en) 1976-11-08 1976-11-08 Method of pulling up semiconductor single crystal of high decompositio n pressure compound

Country Status (1)

Country Link
JP (1) JPS5252186A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494477A (en) * 1972-04-22 1974-01-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494477A (en) * 1972-04-22 1974-01-16

Similar Documents

Publication Publication Date Title
JPS51123561A (en) Production method of semicondvctor device
JPS523583A (en) Crystal film forming process
JPS5277590A (en) Semiconductor producing device
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS5252186A (en) Method of pulling up semiconductor single crystal of high decompositio n pressure compound
JPS5423386A (en) Manufacture of semiconductor device
JPS5247673A (en) Process for production of silicon crystal film
JPS53147700A (en) Method of producing silicon carbide substrate
JPS53108389A (en) Manufacture for semiconductor device
GB2045639B (en) Process for the production of epitaxial layers of semiconductor material on monocrystalline substrates
JPS52114504A (en) Device for zone melting with hot wire
JPS5381069A (en) Production of susceptor in cvd device
JPS57120672A (en) Plasma etching method
JPS53146299A (en) Production of silicon carbide substrate
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5262185A (en) Method of growing platy single crystal
JPS51146408A (en) Process for preparation of glycerylethers
JPS52137432A (en) Purification apparatus for beta-copper phthalocyanine
JPS5217237A (en) Method and apparatus formicro-wave heating
JPS5252570A (en) Device for production of compound semiconductor
JPS538375A (en) Method and apparatus for pulling up single crystal
JPS5231665A (en) Growing method of semiconductor crystal
JPS533062A (en) Semiconductor crystal growth apparatus
JPS52155189A (en) Multiple layer crystal growth
JPS53149875A (en) Preparing apparatus for semiconductor crystal