JPS53147700A - Method of producing silicon carbide substrate - Google Patents
Method of producing silicon carbide substrateInfo
- Publication number
- JPS53147700A JPS53147700A JP6353377A JP6353377A JPS53147700A JP S53147700 A JPS53147700 A JP S53147700A JP 6353377 A JP6353377 A JP 6353377A JP 6353377 A JP6353377 A JP 6353377A JP S53147700 A JPS53147700 A JP S53147700A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon carbide
- carbide substrate
- producing silicon
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To provide a new SiC thin film substrate which permits developing of a 3C type SiC thin film or the like exeellent in quality by melting a Si substrate away with a heat-treatment after developing a SiC crystal thin film thereon so that the SiC crystal thin film is separated therefrom without any damage.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6353377A JPS53147700A (en) | 1977-05-30 | 1977-05-30 | Method of producing silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6353377A JPS53147700A (en) | 1977-05-30 | 1977-05-30 | Method of producing silicon carbide substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53147700A true JPS53147700A (en) | 1978-12-22 |
Family
ID=13231939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6353377A Pending JPS53147700A (en) | 1977-05-30 | 1977-05-30 | Method of producing silicon carbide substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53147700A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55108925U (en) * | 1979-01-24 | 1980-07-30 | ||
JPS60136134U (en) * | 1984-02-17 | 1985-09-10 | 三洋電機株式会社 | Single crystal growth equipment |
JPS6236089A (en) * | 1985-08-09 | 1987-02-17 | 東芝セラミツクス株式会社 | Manufacture of ceramic product |
US4803123A (en) * | 1985-12-16 | 1989-02-07 | Idemitsu Kosan Company Limited | Process for production of fibrous carbon material |
US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
JP2011225392A (en) * | 2010-04-19 | 2011-11-10 | Nippon Steel Corp | Method for producing silicon carbide single crystal ingot, and seed crystal for producing silicon carbide single crystal ingot |
-
1977
- 1977-05-30 JP JP6353377A patent/JPS53147700A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55108925U (en) * | 1979-01-24 | 1980-07-30 | ||
JPS60136134U (en) * | 1984-02-17 | 1985-09-10 | 三洋電機株式会社 | Single crystal growth equipment |
JPH0442911Y2 (en) * | 1984-02-17 | 1992-10-12 | ||
JPS6236089A (en) * | 1985-08-09 | 1987-02-17 | 東芝セラミツクス株式会社 | Manufacture of ceramic product |
JPH0532355B2 (en) * | 1985-08-09 | 1993-05-14 | Toshiba Ceramics Co | |
US4803123A (en) * | 1985-12-16 | 1989-02-07 | Idemitsu Kosan Company Limited | Process for production of fibrous carbon material |
US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
JP2011225392A (en) * | 2010-04-19 | 2011-11-10 | Nippon Steel Corp | Method for producing silicon carbide single crystal ingot, and seed crystal for producing silicon carbide single crystal ingot |
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