JPS53147700A - Method of producing silicon carbide substrate - Google Patents

Method of producing silicon carbide substrate

Info

Publication number
JPS53147700A
JPS53147700A JP6353377A JP6353377A JPS53147700A JP S53147700 A JPS53147700 A JP S53147700A JP 6353377 A JP6353377 A JP 6353377A JP 6353377 A JP6353377 A JP 6353377A JP S53147700 A JPS53147700 A JP S53147700A
Authority
JP
Japan
Prior art keywords
thin film
silicon carbide
carbide substrate
producing silicon
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6353377A
Other languages
Japanese (ja)
Inventor
Takeshi Sakurai
Toshiki Inooku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6353377A priority Critical patent/JPS53147700A/en
Publication of JPS53147700A publication Critical patent/JPS53147700A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a new SiC thin film substrate which permits developing of a 3C type SiC thin film or the like exeellent in quality by melting a Si substrate away with a heat-treatment after developing a SiC crystal thin film thereon so that the SiC crystal thin film is separated therefrom without any damage.
COPYRIGHT: (C)1978,JPO&Japio
JP6353377A 1977-05-30 1977-05-30 Method of producing silicon carbide substrate Pending JPS53147700A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6353377A JPS53147700A (en) 1977-05-30 1977-05-30 Method of producing silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6353377A JPS53147700A (en) 1977-05-30 1977-05-30 Method of producing silicon carbide substrate

Publications (1)

Publication Number Publication Date
JPS53147700A true JPS53147700A (en) 1978-12-22

Family

ID=13231939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6353377A Pending JPS53147700A (en) 1977-05-30 1977-05-30 Method of producing silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS53147700A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108925U (en) * 1979-01-24 1980-07-30
JPS60136134U (en) * 1984-02-17 1985-09-10 三洋電機株式会社 Single crystal growth equipment
JPS6236089A (en) * 1985-08-09 1987-02-17 東芝セラミツクス株式会社 Manufacture of ceramic product
US4803123A (en) * 1985-12-16 1989-02-07 Idemitsu Kosan Company Limited Process for production of fibrous carbon material
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JP2011225392A (en) * 2010-04-19 2011-11-10 Nippon Steel Corp Method for producing silicon carbide single crystal ingot, and seed crystal for producing silicon carbide single crystal ingot

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108925U (en) * 1979-01-24 1980-07-30
JPS60136134U (en) * 1984-02-17 1985-09-10 三洋電機株式会社 Single crystal growth equipment
JPH0442911Y2 (en) * 1984-02-17 1992-10-12
JPS6236089A (en) * 1985-08-09 1987-02-17 東芝セラミツクス株式会社 Manufacture of ceramic product
JPH0532355B2 (en) * 1985-08-09 1993-05-14 Toshiba Ceramics Co
US4803123A (en) * 1985-12-16 1989-02-07 Idemitsu Kosan Company Limited Process for production of fibrous carbon material
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JP2011225392A (en) * 2010-04-19 2011-11-10 Nippon Steel Corp Method for producing silicon carbide single crystal ingot, and seed crystal for producing silicon carbide single crystal ingot

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