JPS5520221A - Production of compound semiconductor single crystal body - Google Patents
Production of compound semiconductor single crystal bodyInfo
- Publication number
- JPS5520221A JPS5520221A JP9141078A JP9141078A JPS5520221A JP S5520221 A JPS5520221 A JP S5520221A JP 9141078 A JP9141078 A JP 9141078A JP 9141078 A JP9141078 A JP 9141078A JP S5520221 A JPS5520221 A JP S5520221A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- crystal body
- single crystal
- specific gravity
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To provide the title single crystal body with superior crystal characteristics by floating a heat insulator made of material with a specific gravity below that of a cpd. semiconductor and provided with a tubular part in close vicinity to the side of a seed crystal body to be pulled so that the body is surrounded with the part and by pulling the semiconductor from the inside of the tubular part of the insulator.
CONSTITUTION: Carbon crucible 3 internally installed with quartz crucible 2 is set in autoclave 1, and cpd. semiconductor 10 and seal member 20 with a specific gravity below that of semiconductor 10 are put into crucible 2 to melt semiconductor 10 with heater 4. On semiconductor 10 heat insulator 50 with a specific gravity below that of semiconductor 10 is floated. Insulator 50 consists of tubular body 50a surrounding seed crystal body 30 in close vicinity to the side of body 30 and flange part 50b. Semiconductor 10 is pulled with body 30 through seal member layer 20 in body 50a.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9141078A JPS5520221A (en) | 1978-07-28 | 1978-07-28 | Production of compound semiconductor single crystal body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9141078A JPS5520221A (en) | 1978-07-28 | 1978-07-28 | Production of compound semiconductor single crystal body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5520221A true JPS5520221A (en) | 1980-02-13 |
Family
ID=14025599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9141078A Pending JPS5520221A (en) | 1978-07-28 | 1978-07-28 | Production of compound semiconductor single crystal body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5520221A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5884199A (en) * | 1981-11-11 | 1983-05-20 | Nippon Telegr & Teleph Corp <Ntt> | Growing apparatus for crystal with low dislocation density |
JPS6036400A (en) * | 1983-08-10 | 1985-02-25 | Agency Of Ind Science & Technol | Apparatus for producing compound semiconductor single crystal |
-
1978
- 1978-07-28 JP JP9141078A patent/JPS5520221A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5884199A (en) * | 1981-11-11 | 1983-05-20 | Nippon Telegr & Teleph Corp <Ntt> | Growing apparatus for crystal with low dislocation density |
JPS6036400A (en) * | 1983-08-10 | 1985-02-25 | Agency Of Ind Science & Technol | Apparatus for producing compound semiconductor single crystal |
JPH0371396B2 (en) * | 1983-08-10 | 1991-11-13 | Kogyo Gijutsuin |
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