MY101257A - Monocrystal growing apparatus. - Google Patents

Monocrystal growing apparatus.

Info

Publication number
MY101257A
MY101257A MYPI87000893A MYPI19870893A MY101257A MY 101257 A MY101257 A MY 101257A MY PI87000893 A MYPI87000893 A MY PI87000893A MY PI19870893 A MYPI19870893 A MY PI19870893A MY 101257 A MY101257 A MY 101257A
Authority
MY
Malaysia
Prior art keywords
monocrystal
heat generator
liquid
temperature
solid
Prior art date
Application number
MYPI87000893A
Inventor
Suzuki Toshihiko
Izawa Nobuyuki
Hoshi Kinji
Okubo Yasunori
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of MY101257A publication Critical patent/MY101257A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

TO INCREASE MONOCRYSTAL (6) GROWING SPEED, IT IS NECESSARY TO INCREASE TEMPERATURE GRADIENT (DT/DX) WITHIN THE SOLID-PHASE MONOCRYSTAL AT THE SOLID-LIQUID INTERFACE. SINCE DRAWN-UP MONOCRYSTAL IS ALWAYS HEATED BY THE RADIATION HEAT FROM THE HEAT GENERATOR, IT IS PREFERABLE TO REDUCE THE TEMPERATURE OF THE HEAT GENERATOR. HOWEVER, WHERE THE TEMPERATURE OF THE HEAT GENERATOR IS REDUCED, THERE EXISTS A PROBLEM IN THAT THE SURFACE OF THE MELTED LIQUID IS READILY SOLIDIFIED AT THE POSITION WHERE THE LIQUID ADJOINS TO THE INNER WALL (2) OF THE CRUCIBLE (1, 2). TO OVERCOME THE ABOVE PROBLEM, THE HEAT GENERATOR IS SO CONSTRUCTED THAT THE UPPER PORTION OF THE MELTED LIQUID IS HEATED TO A HIGHER TEMPERATURE AS COMPARED WITH THE LOWER PORTION OF THE MELTED LIQUID.(FIG. 3)
MYPI87000893A 1984-08-24 1987-06-25 Monocrystal growing apparatus. MY101257A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176420A JPS6153187A (en) 1984-08-24 1984-08-24 Device for growing single crystal

Publications (1)

Publication Number Publication Date
MY101257A true MY101257A (en) 1991-08-17

Family

ID=16013382

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI87000893A MY101257A (en) 1984-08-24 1987-06-25 Monocrystal growing apparatus.

Country Status (10)

Country Link
JP (1) JPS6153187A (en)
AT (1) AT400848B (en)
CA (1) CA1290654C (en)
DE (1) DE3530231A1 (en)
FR (1) FR2569430B1 (en)
GB (1) GB2163367B (en)
IT (1) IT1200719B (en)
MY (1) MY101257A (en)
NL (1) NL193666C (en)
SE (1) SE467258B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105998A (en) * 1985-10-31 1987-05-16 Sony Corp Production of silicon substrate
JPS62223090A (en) * 1986-03-20 1987-10-01 Shin Etsu Handotai Co Ltd Device for pulling up semiconductor single crystal
JPS6389488A (en) * 1986-09-30 1988-04-20 Toshiba Corp Production of single crystal
DE3733487C2 (en) * 1987-10-03 1997-08-14 Leybold Ag Device for pulling single crystals
US5139750A (en) * 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
JPH03183689A (en) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp Device and method for pulling up single crystal
JP3016897B2 (en) * 1991-03-20 2000-03-06 信越半導体株式会社 Method and apparatus for producing silicon single crystal
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
EP0530397A1 (en) * 1991-09-04 1993-03-10 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
JP2862158B2 (en) * 1993-08-27 1999-02-24 信越半導体株式会社 Silicon single crystal manufacturing equipment
JPH1179889A (en) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby
US6285011B1 (en) * 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
KR101105526B1 (en) * 2008-12-30 2012-01-13 주식회사 엘지실트론 Heater used for manufacturing single crystal ingot and single crystal ingot manufacturing apparatus having the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
FR1316707A (en) * 1961-12-22 1963-02-01 Radiotechnique Improvements to devices for obtaining single crystals by pulling
DE1289950B (en) * 1963-07-24 1969-02-27 Siemens Ag Device for pulling semiconductor crystals
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
DE1769860A1 (en) * 1968-07-26 1971-11-11 Siemens Ag Device for pulling dislocation-free semiconductor single crystal rods
JPS4921063A (en) * 1972-06-15 1974-02-25
JPS6027464B2 (en) * 1976-09-28 1985-06-28 日本電気株式会社 High pixel density conversion device
DE2821481C2 (en) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Device for pulling high-purity semiconductor rods from the melt
US4277441A (en) * 1979-01-15 1981-07-07 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
DE3005492C2 (en) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of the purest single crystals by crucible pulling according to Czochralski
JPS5711897A (en) * 1980-06-27 1982-01-21 Sumitomo Electric Ind Ltd Method of pulling up single crystal and device therefor
JPS5645890A (en) * 1980-06-30 1981-04-25 Sony Corp Crystal growing apparatus
DE3027262A1 (en) * 1980-07-18 1982-02-11 Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt DRAWING PROCESSED, THIN-WALLED BEARING BUSHING
JPH0244799B2 (en) * 1981-10-26 1990-10-05 Sony Corp KETSUSHOSEICHOHOHO
JPS5964591A (en) * 1982-09-30 1984-04-12 Sumitomo Electric Ind Ltd Apparatus for pulling up single crystal
JPH0669917B2 (en) * 1982-10-08 1994-09-07 住友電気工業株式会社 Control method for multiple stage heater
JPS59137399A (en) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus of growing low-dislocation density single crystal
JPS60103097A (en) * 1983-11-08 1985-06-07 Sumitomo Electric Ind Ltd Device for pulling up single crystal

Also Published As

Publication number Publication date
FR2569430B1 (en) 1993-12-03
NL8502286A (en) 1986-03-17
JPS6153187A (en) 1986-03-17
GB2163367A (en) 1986-02-26
NL193666B (en) 2000-02-01
GB8520574D0 (en) 1985-09-25
CA1290654C (en) 1991-10-15
IT8521977A0 (en) 1985-08-23
FR2569430A1 (en) 1986-02-28
SE8503935L (en) 1986-02-25
GB2163367B (en) 1988-04-07
DE3530231A1 (en) 1986-02-27
ATA247085A (en) 1995-08-15
NL193666C (en) 2000-06-06
JPH0357072B2 (en) 1991-08-30
SE467258B (en) 1992-06-22
IT1200719B (en) 1989-01-27
SE8503935D0 (en) 1985-08-23
AT400848B (en) 1996-03-25
DE3530231C2 (en) 1991-01-17

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