SE8503935L - MONOCRISTALLINE CULTURE DEVICE - Google Patents
MONOCRISTALLINE CULTURE DEVICEInfo
- Publication number
- SE8503935L SE8503935L SE8503935A SE8503935A SE8503935L SE 8503935 L SE8503935 L SE 8503935L SE 8503935 A SE8503935 A SE 8503935A SE 8503935 A SE8503935 A SE 8503935A SE 8503935 L SE8503935 L SE 8503935L
- Authority
- SE
- Sweden
- Prior art keywords
- heat generator
- liquid
- temperature
- monocrystal
- solid
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
To increase monocrystal growing speed, it is necessary to increase temperature gradient (dT/dX) within the solid-phase monocrystal at the solid- liquid interface. Since drawn-up monocrystal is always heated by the radiation heat from the heat generator, it is preferable to reduce the temperature of the heat generator. However, where the temperature of the heat generator is reduced, there exists a problem in that the surface of the melted liquid is readily solidified at the position where the liquid adjoins to the inner wall of the crucible. To overcome the above problem, the heat generator is so constructed that the upper portion of the melted liquid is heated to a higher temperature as compared with the lower portion of the melted liquid. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59176420A JPS6153187A (en) | 1984-08-24 | 1984-08-24 | Device for growing single crystal |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8503935D0 SE8503935D0 (en) | 1985-08-23 |
SE8503935L true SE8503935L (en) | 1986-02-25 |
SE467258B SE467258B (en) | 1992-06-22 |
Family
ID=16013382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8503935A SE467258B (en) | 1984-08-24 | 1985-08-23 | DEVICE FOR CULTIVATION OF A CRYSTAL WITH ORGANIZATION FOR UNIFORM HEATING |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS6153187A (en) |
AT (1) | AT400848B (en) |
CA (1) | CA1290654C (en) |
DE (1) | DE3530231A1 (en) |
FR (1) | FR2569430B1 (en) |
GB (1) | GB2163367B (en) |
IT (1) | IT1200719B (en) |
MY (1) | MY101257A (en) |
NL (1) | NL193666C (en) |
SE (1) | SE467258B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105998A (en) * | 1985-10-31 | 1987-05-16 | Sony Corp | Production of silicon substrate |
JPS62223090A (en) * | 1986-03-20 | 1987-10-01 | Shin Etsu Handotai Co Ltd | Device for pulling up semiconductor single crystal |
JPS6389488A (en) * | 1986-09-30 | 1988-04-20 | Toshiba Corp | Production of single crystal |
DE3733487C2 (en) * | 1987-10-03 | 1997-08-14 | Leybold Ag | Device for pulling single crystals |
WO1991005891A1 (en) * | 1989-10-16 | 1991-05-02 | Nkk Corporation | Apparatus for manufacturing silicon single crystals |
JPH03183689A (en) * | 1989-12-11 | 1991-08-09 | Mitsubishi Materials Corp | Device and method for pulling up single crystal |
JP3016897B2 (en) * | 1991-03-20 | 2000-03-06 | 信越半導体株式会社 | Method and apparatus for producing silicon single crystal |
US5363795A (en) * | 1991-09-04 | 1994-11-15 | Kawasaki Steel Corporation | Czochralski crystal pulling process and an apparatus for carrying out the same |
EP0530397A1 (en) * | 1991-09-04 | 1993-03-10 | Kawasaki Steel Corporation | Czochralski crystal pulling process and an apparatus for carrying out the same |
JP2862158B2 (en) * | 1993-08-27 | 1999-02-24 | 信越半導体株式会社 | Silicon single crystal manufacturing equipment |
JPH1179889A (en) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby |
US6285011B1 (en) * | 1999-10-12 | 2001-09-04 | Memc Electronic Materials, Inc. | Electrical resistance heater for crystal growing apparatus |
KR101105526B1 (en) * | 2008-12-30 | 2012-01-13 | 주식회사 엘지실트론 | Heater used for manufacturing single crystal ingot and single crystal ingot manufacturing apparatus having the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2979386A (en) * | 1956-08-02 | 1961-04-11 | Shockley William | Crystal growing apparatus |
FR1316707A (en) * | 1961-12-22 | 1963-02-01 | Radiotechnique | Improvements to devices for obtaining single crystals by pulling |
DE1289950B (en) * | 1963-07-24 | 1969-02-27 | Siemens Ag | Device for pulling semiconductor crystals |
US3359077A (en) * | 1964-05-25 | 1967-12-19 | Globe Union Inc | Method of growing a crystal |
DE1769860A1 (en) * | 1968-07-26 | 1971-11-11 | Siemens Ag | Device for pulling dislocation-free semiconductor single crystal rods |
JPS4921063A (en) * | 1972-06-15 | 1974-02-25 | ||
JPS6027464B2 (en) * | 1976-09-28 | 1985-06-28 | 日本電気株式会社 | High pixel density conversion device |
DE2821481C2 (en) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Device for pulling high-purity semiconductor rods from the melt |
US4277441A (en) * | 1979-01-15 | 1981-07-07 | Mobil Tyco Solar Energy Corporation | Apparatus for monitoring crystal growth |
DE3005492C2 (en) * | 1980-02-14 | 1983-10-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for the production of the purest single crystals by crucible pulling according to Czochralski |
JPS5711897A (en) * | 1980-06-27 | 1982-01-21 | Sumitomo Electric Ind Ltd | Method of pulling up single crystal and device therefor |
JPS5645890A (en) * | 1980-06-30 | 1981-04-25 | Sony Corp | Crystal growing apparatus |
DE3027262A1 (en) * | 1980-07-18 | 1982-02-11 | Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt | DRAWING PROCESSED, THIN-WALLED BEARING BUSHING |
JPH0244799B2 (en) * | 1981-10-26 | 1990-10-05 | Sony Corp | KETSUSHOSEICHOHOHO |
JPS5964591A (en) * | 1982-09-30 | 1984-04-12 | Sumitomo Electric Ind Ltd | Apparatus for pulling up single crystal |
JPH0669917B2 (en) * | 1982-10-08 | 1994-09-07 | 住友電気工業株式会社 | Control method for multiple stage heater |
JPS59137399A (en) * | 1983-01-28 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus of growing low-dislocation density single crystal |
JPS60103097A (en) * | 1983-11-08 | 1985-06-07 | Sumitomo Electric Ind Ltd | Device for pulling up single crystal |
-
1984
- 1984-08-24 JP JP59176420A patent/JPS6153187A/en active Granted
-
1985
- 1985-08-16 GB GB08520574A patent/GB2163367B/en not_active Expired
- 1985-08-19 NL NL8502286A patent/NL193666C/en not_active IP Right Cessation
- 1985-08-22 FR FR8512629A patent/FR2569430B1/en not_active Expired - Fee Related
- 1985-08-23 SE SE8503935A patent/SE467258B/en not_active IP Right Cessation
- 1985-08-23 AT AT0247085A patent/AT400848B/en not_active IP Right Cessation
- 1985-08-23 IT IT21977/85A patent/IT1200719B/en active
- 1985-08-23 DE DE19853530231 patent/DE3530231A1/en active Granted
- 1985-08-23 CA CA000489331A patent/CA1290654C/en not_active Expired - Lifetime
-
1987
- 1987-06-25 MY MYPI87000893A patent/MY101257A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL8502286A (en) | 1986-03-17 |
NL193666B (en) | 2000-02-01 |
NL193666C (en) | 2000-06-06 |
IT8521977A0 (en) | 1985-08-23 |
ATA247085A (en) | 1995-08-15 |
SE467258B (en) | 1992-06-22 |
GB2163367A (en) | 1986-02-26 |
JPH0357072B2 (en) | 1991-08-30 |
AT400848B (en) | 1996-03-25 |
FR2569430A1 (en) | 1986-02-28 |
SE8503935D0 (en) | 1985-08-23 |
IT1200719B (en) | 1989-01-27 |
GB2163367B (en) | 1988-04-07 |
JPS6153187A (en) | 1986-03-17 |
CA1290654C (en) | 1991-10-15 |
DE3530231C2 (en) | 1991-01-17 |
FR2569430B1 (en) | 1993-12-03 |
GB8520574D0 (en) | 1985-09-25 |
MY101257A (en) | 1991-08-17 |
DE3530231A1 (en) | 1986-02-27 |
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Legal Events
Date | Code | Title | Description |
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NAL | Patent in force |
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