CN207109138U - A kind of directional solidification furnace of solar energy polycrystalline silicon - Google Patents
A kind of directional solidification furnace of solar energy polycrystalline silicon Download PDFInfo
- Publication number
- CN207109138U CN207109138U CN201720741665.7U CN201720741665U CN207109138U CN 207109138 U CN207109138 U CN 207109138U CN 201720741665 U CN201720741665 U CN 201720741665U CN 207109138 U CN207109138 U CN 207109138U
- Authority
- CN
- China
- Prior art keywords
- heat
- directional solidification
- insulation cage
- polycrystalline silicon
- solar energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model provides a kind of directional solidification furnace of solar energy polycrystalline silicon, including body of heater, heat-insulation cage, the heat-insulation cage bottom opening are provided with the body of heater, opening is provided with sealed bottom plate, and the sealed bottom plate relative insulation cage movement seals opposite heat-insulation cage movement opening；Heating electrode is provided with the heat-insulation cage, the heating electrode interior is provided with growth crucible, and the growth crucible bottom is provided with cooling block.Heating with fusion process, heat guard is closing.Surrounding heat guard is lifted when long brilliant, the openning of a heat transfer is outputed below crucible, silicon liquid is begun to cool down from bottom, realizes directional solidification from lower to upper.The directional solidification furnace can grow big polycrystal silicon ingot, thus quantum of output is high.The other consolidation furnace is simple with respect to crystal growth using technology controlling and process, and production cost is low.
Description
Technical field
It the utility model is related to the coagulation system of polysilicon, and in particular to a kind of directional solidification furnace of solar energy polycrystalline silicon.
Background technology
High purity polycrystalline silicon is the basic material of electronics industry and solar photovoltaic industry, in 50 years of future, can not also
There can be other materials to substitute silicon materials and turn into electronics and photovoltaic industry main raw material(s).
With the rapid development of information technology and solar energy industry, demand growth of the whole world to polysilicon is swift and violent, and market supplies
It should not ask.The yield 2005 of world's polysilicon is 28750 tons, and wherein semiconductor grade is 20250 tons, solar level 8500
Ton.Semiconductor grade demand is about 19000 tons, slightly surplus；The demand of solar level is 15600 tons, and supply falls short of demand.In recent years
Come, global solar battery production quickly increases, the direct pull swift and violent growth of polysilicon demand.Global polysilicon was by supplying
In asking steering, supply falls short of demand.Suffer from this, the polysilicon price as solar cell primary raw material quickly goes up.
Chinese polycrystalline silicon industry is started in the 1950s, the mid-1960s realize industrialization, to the seventies, production
Producer once developed into family more than 20.But because technology falls behind, environmental pollution is serious, and consumption is big, the reason such as cost height, big absolutely
Some Enterprises lose and stop production or change the line of production in succession.Up to the present, the domestic unit for having production of polysilicon condition has silicon in Luoyang
3 High Seience Technology Co., Ltd., mount emei semi-conducting material factory (institute), Sichuan Xinguang Silicon Technology Co., Ltd. enterprises.
Chinese Integrated Circuit and solar cell are to the demand rapid growth of polysilicon, and IC industry needs within 2005
About 1000 tons of electronic-grade polycrystalline silicon, solar cell need about 1400 tons of polysilicon；By 2010, China Electronics's level polysilicon year
Demand is up to about 2000 tons, and photovoltaic grade polycrystalline silicon annual requirement is up to about 4200 tons.And the autonomous confession of Chinese polysilicon
For goods there is serious breach, more than 95% polycrystalline silicon material needs import, and supply is long-term under one's control, sudden and violent along with price
Rise, injured the development of polysilicon downstream numerous enterprises, turn into and restrict China's IT industry and photovoltaic industry industry development
Bottleneck problem.
The device for directionally solidifying of simple and quick polysilicon is thus researched and developed, yield is improved, reduces cost, turn into urgent need
Solve the problems, such as.
Utility model content
The utility model provides a kind of directional solidification furnace of solar energy polycrystalline silicon, and the technical solution of the utility model is：One
The directional solidification furnace of solar energy polycrystalline silicon, including body of heater are planted, is provided with heat-insulation cage in the body of heater, the heat-insulation cage bottom is opened
Mouthful, opening is provided with sealed bottom plate, and the sealed bottom plate relative insulation cage movement seals opposite heat-insulation cage movement opening；
Heating electrode is provided with the heat-insulation cage, the heating electrode interior is provided with growth crucible, the growth earthenware
Crucible bottom is provided with cooling block.
Further, the sealed bottom plate bottom is attached across the first connecting rod of body of heater, and the first connecting rod connects energy
The first motor for enough driving first connecting rod to move up and down.
Further, the second connecting rod of body of heater is attached across at the top of the heat-insulation cage, the second connecting rod connection being capable of band
The second electrode that dynamic second connecting rod moves up and down.
Further, the second electrode is fixed on support.
Further, the bottom of furnace body is provided with support base.
Further, the heating electrode is fixed on inside heat-insulation cage by heating electrode holder.
Further, the growth crucible periphery is enclosed with heat-insulation layer.
The beneficial effects of the utility model are：Heating with fusion process, heat guard is closing.By surrounding when long brilliant
Heat guard is lifted, and the openning of a heat transfer is outputed below crucible, silicon liquid is begun to cool down from bottom, realizes determining from lower to upper
To solidification.The directional solidification furnace can grow big polycrystal silicon ingot, thus quantum of output is high.The other directional solidification furnace uses technique control
The relative crystal growth of system is simple, and production cost is low.
Brief description of the drawings
Fig. 1 is the furnace interior structure chart of directional solidification furnace；
Fig. 2 is the furnace binding figure with sealed bottom plate stretching structure；
Fig. 3 is the furnace binding figure with heat-insulation cage stretching structure.
In figure：1 is heat-insulation cage, and 2 be heating electrode holder, and 3 be body of heater, and 4 be heating electrode, and 5 be growth crucible, and 6 are
Heat-insulation layer, 7 be cooling block, and 8 be sealed bottom plate, and 9 be first connecting rod, and 10 be the first motor, and 11 be second connecting rod, and 12 be second
Electrode, 13 be support, and 14 be support base.
Embodiment
The utility model is described further below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of directional solidification furnace of solar energy polycrystalline silicon, including body of heater 3, heat-insulation cage is provided with body of heater 3
1, the bottom opening of heat-insulation cage 1, opening is provided with sealed bottom plate 8, and the movement sealing of the relative insulation cage 1 of sealed bottom plate 8 is opposite
The movement opening of heat-insulation cage 1.Be provided with heat-insulation cage 1 heating electrode 4, heating electrode 4 by heat electrode holder 2 be fixed on every
Inside hot cage 1.Heating electrode 4 is internally provided with growth crucible 5, and the bottom of growth crucible 5 is provided with cooling block 7.Outside growth crucible 5
Enclose and be enclosed with heat-insulation layer 6.
The bottom of body of heater 3 is provided with support base 14.
As preferred embodiment, as shown in Fig. 2 the bottom of sealed bottom plate 8 is attached across the first connecting rod 9 of body of heater 3,
First connecting rod 9 connects the first motor 10 that first connecting rod can be driven to move up and down.
As preferred embodiment, as shown in figure 3, the top of heat-insulation cage 1 is attached across the second connecting rod 11 of body of heater 3, the
The connection of two connecting rods 11 can drive the second electrode 12 that second connecting rod 11 moves up and down.Second electrode 12 is fixed on support 13.
Surrounding heat-insulation cage is lifted during the directional solidification furnace superintendent crystalline substance of solar energy polycrystalline silicon or pulls down sealed bottom plate,
Outputed below growth crucible one heat transfer openning, the silicon liquid inside growth crucible is begun to cool down from bottom, realize from it is lower toward
On directional solidification.The directional solidification furnace can grow big polycrystal silicon ingot, thus quantum of output is high.The other directional solidification furnace uses
Technology controlling and process is simple with respect to crystal growth, and production cost is low.
It the above is only preferred embodiment of the present utility model, it is noted that for the ordinary skill people of the art
For member, on the premise of the utility model principle is not departed from, some improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as the scope of protection of the utility model.
Claims (7)
- A kind of 1. directional solidification furnace of solar energy polycrystalline silicon, it is characterised in that：Including body of heater (3), it is provided with the body of heater (3) Heat-insulation cage (1), heat-insulation cage (1) bottom opening, opening are provided with sealed bottom plate (8), sealed bottom plate (8) phase It is mobile to heat-insulation cage (1) to seal the mobile opening of opposite heat-insulation cage (1)；Heating electrode (4) is provided with the heat-insulation cage (1), the heating electrode (4) is internally provided with growth crucible (5), institute State growth crucible (5) bottom and be provided with cooling block (7).
- A kind of 2. directional solidification furnace of solar energy polycrystalline silicon according to claim 1, it is characterised in that：The sealed bottom Plate (8) bottom is attached across the first connecting rod (9) of body of heater (3), and first connecting rod (9) connection can be driven above and below first connecting rod The first motor (10) of motion.
- A kind of 3. directional solidification furnace of solar energy polycrystalline silicon according to claim 1, it is characterised in that：The heat-insulation cage (1) top is attached across the second connecting rod (11) of body of heater (3), and second connecting rod (11) connection can drive second connecting rod (11) The second electrode (12) of up and down motion.
- A kind of 4. directional solidification furnace of solar energy polycrystalline silicon according to claim 3, it is characterised in that：The second electrode (12) it is fixed on support (13).
- A kind of 5. directional solidification furnace of solar energy polycrystalline silicon according to claim 1, it is characterised in that：The body of heater (3) Bottom is provided with support base (14).
- A kind of 6. directional solidification furnace of solar energy polycrystalline silicon according to claim 1, it is characterised in that：The heating electrode (4) it is fixed on heat-insulation cage (1) inside by heating electrode holder (2).
- A kind of 7. directional solidification furnace of solar energy polycrystalline silicon according to claim 1, it is characterised in that：The growth crucible (5) periphery is enclosed with heat-insulation layer (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720741665.7U CN207109138U (en) | 2017-06-23 | 2017-06-23 | A kind of directional solidification furnace of solar energy polycrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720741665.7U CN207109138U (en) | 2017-06-23 | 2017-06-23 | A kind of directional solidification furnace of solar energy polycrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207109138U true CN207109138U (en) | 2018-03-16 |
Family
ID=61578895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720741665.7U Expired - Fee Related CN207109138U (en) | 2017-06-23 | 2017-06-23 | A kind of directional solidification furnace of solar energy polycrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207109138U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109112617A (en) * | 2017-06-23 | 2019-01-01 | 镇江仁德新能源科技有限公司 | A kind of directional solidification furnace and directional freeze method of solar energy polycrystalline silicon |
| CN110777427A (en) * | 2018-07-25 | 2020-02-11 | 昭和电工株式会社 | Crystal growing device |
-
2017
- 2017-06-23 CN CN201720741665.7U patent/CN207109138U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109112617A (en) * | 2017-06-23 | 2019-01-01 | 镇江仁德新能源科技有限公司 | A kind of directional solidification furnace and directional freeze method of solar energy polycrystalline silicon |
| CN110777427A (en) * | 2018-07-25 | 2020-02-11 | 昭和电工株式会社 | Crystal growing device |
| US11105016B2 (en) | 2018-07-25 | 2021-08-31 | Showa Denko K.K. | Crystal growth apparatus with controlled center position of heating |
| CN110777427B (en) * | 2018-07-25 | 2021-11-19 | 昭和电工株式会社 | Crystal growing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101935869B (en) | Crucible and substrate slice for growing and casting monocrystalline silicon | |
| CN207109138U (en) | A kind of directional solidification furnace of solar energy polycrystalline silicon | |
| CN102345157A (en) | Continuous re-feeding production method of solar-grade Czochralski silicon | |
| CN103882517A (en) | Preparation method of polycrystalline silicon ingot | |
| CN104451858A (en) | Multifunctional crystal growth system for high-pressure in-situ synthesis | |
| CN102140673A (en) | Polycrystalline silicon ingot furnace heating device with separately controlled top and side | |
| CN104726934A (en) | Efficient ingot casting semi-melting technology capable of achieving low dislocation density | |
| CN101851782A (en) | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace | |
| CN204237887U (en) | Situ high pressure synthesizes multi-functional crystal growth system | |
| CN204237890U (en) | A kind of crystalline silicon directional solidification growth equipment | |
| CN101949056A (en) | Directional solidification furnace with heat preservation part at bottom of side wall of crucible | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN206624946U (en) | A kind of pressure furnace for being used to prepare indium phosphide single crystal | |
| CN101323973A (en) | Polysilicon directional long crystal thermal field | |
| CN104372407A (en) | Equipment and method for directional solidification growth of crystalline silicon | |
| CN103911667A (en) | Necking crucible-based crucible wall-free contact-type single crystal growth method | |
| CN109112617A (en) | A kind of directional solidification furnace and directional freeze method of solar energy polycrystalline silicon | |
| CN102433585A (en) | Thermal field structure of quasi-monocrystal ingot furnace | |
| CN102925957B (en) | Crystal growth device | |
| CN202755096U (en) | Heat insulation device for ingot furnace | |
| CN101812726A (en) | Method for preparing gallium-doped p-type crystalline silicon | |
| CN101597788A (en) | Under nitrogen, melt the method that polysilicon prepares the nitrating casting monocrystalline silicon | |
| CN203382848U (en) | High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate | |
| CN203065635U (en) | Bottom enhanced cooling device | |
| CN102071455B (en) | Water cooling device for directional solidification of polycrystalline silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180316 |