JPS54162686A - Preparation of oxide single crystal - Google Patents
Preparation of oxide single crystalInfo
- Publication number
- JPS54162686A JPS54162686A JP7246478A JP7246478A JPS54162686A JP S54162686 A JPS54162686 A JP S54162686A JP 7246478 A JP7246478 A JP 7246478A JP 7246478 A JP7246478 A JP 7246478A JP S54162686 A JPS54162686 A JP S54162686A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- crystal
- stand
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To effectively pull up a large part of molten material in the crucible and accordingly, to manufacture oxide single crystal at a low cost, by providing nearly cylindrical auxiliary heat source with top and bottom of the crucible.
CONSTITUTION: The crucible 3 made of Pt-Rh etc., is placed on the bottomed short cyrindrical stand 2 made of refractory material in the crucible 1 made of refractory material on the outside and the bubble alumina 4 is filled up around the crucible 3 and the stand 2. Also, the truncated conical auxiliary heat source 6 is provided with the refractory ring 5 on the upper part of the alumina 4. On the one hand, the auxiliary heat source 7 for preventing the crystallization of molten material filled up the alumina 4 inside, is provided with the stand 2 below the crucible 3. Next, crystal raw material, such as LiTaO3 etc., accomodated in the crucible 3, is melted by the action of the heating coil 10 around the crucible 1 and single crystal is pulled up from the molten liquid 11 using seed crystal having X axis compass direction. During the above operation, crack of the crystal is prevented giving gentle temperature gradient just above the liquid 11 by the source 6 and crystallization is prevented by the source 7. As a result of it, the oxide single crystal of about two times in length is able to pull up compared with usual method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7246478A JPS54162686A (en) | 1978-06-15 | 1978-06-15 | Preparation of oxide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7246478A JPS54162686A (en) | 1978-06-15 | 1978-06-15 | Preparation of oxide single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54162686A true JPS54162686A (en) | 1979-12-24 |
| JPS5750757B2 JPS5750757B2 (en) | 1982-10-28 |
Family
ID=13490045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7246478A Granted JPS54162686A (en) | 1978-06-15 | 1978-06-15 | Preparation of oxide single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162686A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018140900A (en) * | 2017-02-28 | 2018-09-13 | 住友金属鉱山株式会社 | Crystal growth apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6227861A (en) * | 1985-07-30 | 1987-02-05 | Toshiba Corp | Kanji input device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503270A (en) * | 1973-05-11 | 1975-01-14 | ||
| JPS5126692A (en) * | 1974-08-29 | 1976-03-05 | Mitsubishi Electric Corp |
-
1978
- 1978-06-15 JP JP7246478A patent/JPS54162686A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503270A (en) * | 1973-05-11 | 1975-01-14 | ||
| JPS5126692A (en) * | 1974-08-29 | 1976-03-05 | Mitsubishi Electric Corp |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018140900A (en) * | 2017-02-28 | 2018-09-13 | 住友金属鉱山株式会社 | Crystal growth apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5750757B2 (en) | 1982-10-28 |
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