JPS5515939A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5515939A
JPS5515939A JP8675978A JP8675978A JPS5515939A JP S5515939 A JPS5515939 A JP S5515939A JP 8675978 A JP8675978 A JP 8675978A JP 8675978 A JP8675978 A JP 8675978A JP S5515939 A JPS5515939 A JP S5515939A
Authority
JP
Japan
Prior art keywords
crystal
crucible
single crystal
melt
housed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8675978A
Other languages
Japanese (ja)
Other versions
JPS6116757B2 (en
Inventor
Tsuguo Fukuda
Toshiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8675978A priority Critical patent/JPS5515939A/en
Publication of JPS5515939A publication Critical patent/JPS5515939A/en
Publication of JPS6116757B2 publication Critical patent/JPS6116757B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To produce a long-sized single crystal of high quality in a high yield by contacting a seed crystal to a melt housed in a crucible to grow a single crystal at a specified speed and by cooling the crystal under specified conditions.
CONSTITUTION: Melt 2 is housed in 20W40 wt% Rh-contg. platinum crucible 1 enclosed with bubble alumina 4 having upper dome-shaped heat reflective plate 6 for an after heater, and crucible 1 is set in quartz tube 3 provided with outer high frequency heating coils 7. Seed crystal 8 is contacted to melt 2 to grow single crystal 9 at a speed satisfying f/fp≥2, and crystal 9 is cooled to around room temp. while placing above 40% of the crystal length in crucible 1.
COPYRIGHT: (C)1980,JPO&Japio
JP8675978A 1978-07-18 1978-07-18 Production of single crystal Granted JPS5515939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8675978A JPS5515939A (en) 1978-07-18 1978-07-18 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8675978A JPS5515939A (en) 1978-07-18 1978-07-18 Production of single crystal

Publications (2)

Publication Number Publication Date
JPS5515939A true JPS5515939A (en) 1980-02-04
JPS6116757B2 JPS6116757B2 (en) 1986-05-01

Family

ID=13895664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8675978A Granted JPS5515939A (en) 1978-07-18 1978-07-18 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5515939A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130329296A1 (en) * 2012-06-12 2013-12-12 Hon Hai Precision Industry Co., Ltd. Device for growing sapphire ingot at high speed and sapphire cover glass having excellent optical properties
CN110241456A (en) * 2019-07-11 2019-09-17 北方民族大学 The method that flux method grows uniform near-stoichiometric lithium tantalate crystals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130329296A1 (en) * 2012-06-12 2013-12-12 Hon Hai Precision Industry Co., Ltd. Device for growing sapphire ingot at high speed and sapphire cover glass having excellent optical properties
CN110241456A (en) * 2019-07-11 2019-09-17 北方民族大学 The method that flux method grows uniform near-stoichiometric lithium tantalate crystals

Also Published As

Publication number Publication date
JPS6116757B2 (en) 1986-05-01

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