JPS55158196A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS55158196A
JPS55158196A JP6638279A JP6638279A JPS55158196A JP S55158196 A JPS55158196 A JP S55158196A JP 6638279 A JP6638279 A JP 6638279A JP 6638279 A JP6638279 A JP 6638279A JP S55158196 A JPS55158196 A JP S55158196A
Authority
JP
Japan
Prior art keywords
melt
crystal
single crystal
seed crystal
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6638279A
Other languages
Japanese (ja)
Inventor
Tsuguo Fukuda
Toshiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6638279A priority Critical patent/JPS55158196A/en
Publication of JPS55158196A publication Critical patent/JPS55158196A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a high quality single crystal of a fixed diameter by forcedly cooling a seed crystal section through a seed crystal support by applying the principle of a heat exchange method to always maintain temp. gradients right above and just under a melt in a crucible at proper values independently of a lowering of the melt surface.
CONSTITUTION: A sintered body of LiTaO3 in put in crucible 3 and heated with high frequency induction coil 4 to form melt 5. After adjusting melt 5 to a temp. suitable for crystal growth seed crystal 6 is contacted to melt 5. Seed crystal support 7 connected to crystal 6 has double-tube structure and is provided with an external heat exchanger, and cooling gas 8 such as He is passed through the inside of support 7 to cool the seed crystal section. While maintaining temp. gradients right above and just under melt 5 at proper values by adjusting the flow rate of gas 8, a single crystal is grown. Radius (r) of the single crystal is shown by equation I when density difference dL/dS<0.90, supposing the radius crucible 3 to be rc, the density of melt 5 dL and the density of the single crystal dS.
COPYRIGHT: (C)1980,JPO&Japio
JP6638279A 1979-05-29 1979-05-29 Manufacture of single crystal Pending JPS55158196A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6638279A JPS55158196A (en) 1979-05-29 1979-05-29 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6638279A JPS55158196A (en) 1979-05-29 1979-05-29 Manufacture of single crystal

Publications (1)

Publication Number Publication Date
JPS55158196A true JPS55158196A (en) 1980-12-09

Family

ID=13314214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6638279A Pending JPS55158196A (en) 1979-05-29 1979-05-29 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS55158196A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613486A (en) * 1983-10-28 1986-09-23 Sumitomo Electric Industrial Co., Ltd. Semiconductor boule pulling rod
JPS63162594A (en) * 1986-12-26 1988-07-06 Hamamatsu Photonics Kk Process for growing single crystal
KR20020056247A (en) * 2000-12-29 2002-07-10 김병관 Apparatus for growing the sapphire single crystal
JP2006131433A (en) * 2004-11-02 2006-05-25 Sumitomo Metal Ind Ltd Method of producing silicon carbide single crystal
EP2722421A1 (en) * 2011-06-17 2014-04-23 Nippon Steel & Sumitomo Metal Corporation Apparatus and method for producing sic single crystal

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613486A (en) * 1983-10-28 1986-09-23 Sumitomo Electric Industrial Co., Ltd. Semiconductor boule pulling rod
JPS63162594A (en) * 1986-12-26 1988-07-06 Hamamatsu Photonics Kk Process for growing single crystal
KR20020056247A (en) * 2000-12-29 2002-07-10 김병관 Apparatus for growing the sapphire single crystal
JP2006131433A (en) * 2004-11-02 2006-05-25 Sumitomo Metal Ind Ltd Method of producing silicon carbide single crystal
EP2722421A1 (en) * 2011-06-17 2014-04-23 Nippon Steel & Sumitomo Metal Corporation Apparatus and method for producing sic single crystal
EP2722421A4 (en) * 2011-06-17 2014-05-14 Nippon Steel & Sumitomo Metal Corp Apparatus and method for producing sic single crystal

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