JPS5688895A - Growth of single crystal - Google Patents
Growth of single crystalInfo
- Publication number
- JPS5688895A JPS5688895A JP16722379A JP16722379A JPS5688895A JP S5688895 A JPS5688895 A JP S5688895A JP 16722379 A JP16722379 A JP 16722379A JP 16722379 A JP16722379 A JP 16722379A JP S5688895 A JPS5688895 A JP S5688895A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- platinum
- heating
- noble metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent the solidification of a raw material at the bottom of a noble metal crucible and to grow a single crystal with a uniform shape, by equipping the noble metal crucible with a noble metal material at its bottom, heating the material by inducing high frequency to it, and heating the bottom of the crucible by the heat to grow the single crystal.
CONSTITUTION: In a method to use a high-frequency furnace, to melt the raw material 14 under heating by inducing high-frequency in the noble metal (Pt) crucible 2, and to pull up and to grow the single crystal 13, the auxiliary heating material 1 of a platinum cylindrical cup for heating the crucible 2 is furnished between the platinum crucible 2 and the fixed stand 4. The platinum cylindrical part is made to generate heat by inducing high frequency in the platinum cylinder 1, and the bottom of the platinum crucible 2 is heated, to make it possible to prevent the solidification of the melt 14 at the bottom of the crucible 2, to suppress such a spiral undulation resulting from the solidification at the bottom of the crucible as it occurs in the conventional method, and to pull up the uniform single crystal 13.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16722379A JPS5688895A (en) | 1979-12-22 | 1979-12-22 | Growth of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16722379A JPS5688895A (en) | 1979-12-22 | 1979-12-22 | Growth of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5688895A true JPS5688895A (en) | 1981-07-18 |
Family
ID=15845718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16722379A Pending JPS5688895A (en) | 1979-12-22 | 1979-12-22 | Growth of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688895A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59109775U (en) * | 1983-01-11 | 1984-07-24 | 東北金属工業株式会社 | Crucible for single crystal growth |
| KR20030020809A (en) * | 2001-09-04 | 2003-03-10 | 전우용 | Appratus and method of sapphire production by high frequency reduction heating process |
| JP2004123510A (en) * | 2002-06-13 | 2004-04-22 | Hitachi Ltd | Apparatus for manufacturing single crystal and method for manufacturing the same |
-
1979
- 1979-12-22 JP JP16722379A patent/JPS5688895A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59109775U (en) * | 1983-01-11 | 1984-07-24 | 東北金属工業株式会社 | Crucible for single crystal growth |
| KR20030020809A (en) * | 2001-09-04 | 2003-03-10 | 전우용 | Appratus and method of sapphire production by high frequency reduction heating process |
| JP2004123510A (en) * | 2002-06-13 | 2004-04-22 | Hitachi Ltd | Apparatus for manufacturing single crystal and method for manufacturing the same |
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