JPS5637293A - Single crystal manufacturing refractory crucible - Google Patents

Single crystal manufacturing refractory crucible

Info

Publication number
JPS5637293A
JPS5637293A JP11397479A JP11397479A JPS5637293A JP S5637293 A JPS5637293 A JP S5637293A JP 11397479 A JP11397479 A JP 11397479A JP 11397479 A JP11397479 A JP 11397479A JP S5637293 A JPS5637293 A JP S5637293A
Authority
JP
Japan
Prior art keywords
crucible
tray
single crystal
crystal manufacturing
refractory crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11397479A
Other languages
Japanese (ja)
Inventor
Koichi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP11397479A priority Critical patent/JPS5637293A/en
Publication of JPS5637293A publication Critical patent/JPS5637293A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)

Abstract

PURPOSE: To prevent a temp. condition change, etc. of a crucible used to externally reinforce and heat insulate a noble metal crucible due to cracking by composing the former crucible of a tubular body divided into two or more parts in the axial direction and a tray on which the body is mounted.
CONSTITUTION: Refractory crucible 10 is composed of tray 11 and tubular body 12 mounted on tray 11, and body 12 is formed by combining divided body members 12', 12". Thus, a temp. condition change due to cracking is prevented in a crystal growing process, and crystal growth can be performed with high reproducibility.
COPYRIGHT: (C)1981,JPO&Japio
JP11397479A 1979-09-05 1979-09-05 Single crystal manufacturing refractory crucible Pending JPS5637293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11397479A JPS5637293A (en) 1979-09-05 1979-09-05 Single crystal manufacturing refractory crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11397479A JPS5637293A (en) 1979-09-05 1979-09-05 Single crystal manufacturing refractory crucible

Publications (1)

Publication Number Publication Date
JPS5637293A true JPS5637293A (en) 1981-04-10

Family

ID=14625872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11397479A Pending JPS5637293A (en) 1979-09-05 1979-09-05 Single crystal manufacturing refractory crucible

Country Status (1)

Country Link
JP (1) JPS5637293A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662987A (en) * 1984-08-01 1987-05-05 Integrated Automation, Limited Method of double floating transport and processing of wafers within a confined passageway
US4663197A (en) * 1981-08-26 1987-05-05 Integrated Automation Limited Method and apparatus for coating a substrate
JPH0183072U (en) * 1987-11-17 1989-06-02
CN101830465A (en) * 2010-05-26 2010-09-15 丽达科技有限公司 Silicon electromagnetic casting device
WO2011077556A1 (en) * 2009-12-25 2011-06-30 Kaneko Kyojiro Electromagnetic casting apparatus for silicon
JP2018043917A (en) * 2016-09-16 2018-03-22 住友金属鉱山株式会社 Method of raising oxide single crystal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663197A (en) * 1981-08-26 1987-05-05 Integrated Automation Limited Method and apparatus for coating a substrate
US4662987A (en) * 1984-08-01 1987-05-05 Integrated Automation, Limited Method of double floating transport and processing of wafers within a confined passageway
JPH0183072U (en) * 1987-11-17 1989-06-02
WO2011077556A1 (en) * 2009-12-25 2011-06-30 Kaneko Kyojiro Electromagnetic casting apparatus for silicon
JP4846069B2 (en) * 2009-12-25 2011-12-28 恭二郎 金子 Silicon electromagnetic casting equipment
US20120244061A1 (en) * 2009-12-25 2012-09-27 Consarc Corporation Electromagnetic Casting Apparatus for Silicon
CN101830465A (en) * 2010-05-26 2010-09-15 丽达科技有限公司 Silicon electromagnetic casting device
JP2018043917A (en) * 2016-09-16 2018-03-22 住友金属鉱山株式会社 Method of raising oxide single crystal

Similar Documents

Publication Publication Date Title
JPS5347765A (en) Semiconductor crystal growth method
JPS5345426A (en) Production of activated carbo fibers
JPS5637293A (en) Single crystal manufacturing refractory crucible
JPS553860A (en) Coating method
JPS5431951A (en) Temperature controller
JPS5325279A (en) Connecting part of graphite electrode
JPS52136812A (en) Roll for process line
JPS52101737A (en) Heating body
JPS545877A (en) Crystal growing device
JPS52104474A (en) Control method for crystal growth
JPS5328509A (en) Treating method for increasing high temperature strength of pure titanium material
JPS55140800A (en) Crucible for crystal growing crucible device
JPS5674922A (en) Method of vapor growth
JPS5688895A (en) Growth of single crystal
JPS5413475A (en) Preparation of single crystal
JPS51146380A (en) A crucible for raising of single crystal
JPS5236504A (en) Process for producing ingot of chromium or chromium alloy
JPS51136582A (en) Process for production of a semi -conductor crystal
JPS5218249A (en) Temperature constant water tank
JPS5352997A (en) Thin film type heating resistor body
JPS51111418A (en) Method of manufacturing niobium containing high strength steel
FR2340130A2 (en) Production of alpha aluminium oxide single crystal - which has a circular cross section, by drawing from an aluminium oxide melt contg. chromium-iron-, or magnesium oxide
JPS52143757A (en) Process tube in heat treatment furnace
JPS5327357A (en) Direct heating cathode
JPS5363650A (en) Heat insulating covered copper tube