JPS6418993A - Production of bi12sio20 single crystal - Google Patents
Production of bi12sio20 single crystalInfo
- Publication number
- JPS6418993A JPS6418993A JP17365287A JP17365287A JPS6418993A JP S6418993 A JPS6418993 A JP S6418993A JP 17365287 A JP17365287 A JP 17365287A JP 17365287 A JP17365287 A JP 17365287A JP S6418993 A JPS6418993 A JP S6418993A
- Authority
- JP
- Japan
- Prior art keywords
- bi12sio20
- single crystal
- crucible
- feedstock
- molten liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain the titled single crystal of stabilized quality in high yield, by solidifying, in the form of gamma-Bi12SiO20, the residual feedstock in a crucible after growing Bi12SiO20 single crystal to prevent crucible deformation. CONSTITUTION:A Bi12SiO20 feedstock is put in a crucible 2 set up within a furnace itself 3 and its cover 4 and heated through a high-frequency coil 5 to effect melting to prepare a molten liquid 1. Thence, the seed single crystal 7 at the tip of a lifting shaft 6 is brought into contact with this molten liquid 1 followed by lifting to make Bi12SiO20 single crystal 8 at the tip of the single crystal 7. Small pieces of Bi2O3, SiO2 or compound thereof is then added to the molten liquid 1 left in the crucible 2 to separate gamma-Bi12SiO20 phase out followed by solidification. The resulting solidified product is additionally incorporated with the feedstock followed by melting again, and growing Bi12SiO20 single crystal in a similar way to that mentioned above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17365287A JPS6418993A (en) | 1987-07-11 | 1987-07-11 | Production of bi12sio20 single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17365287A JPS6418993A (en) | 1987-07-11 | 1987-07-11 | Production of bi12sio20 single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6418993A true JPS6418993A (en) | 1989-01-23 |
| JPH0377159B2 JPH0377159B2 (en) | 1991-12-09 |
Family
ID=15964584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17365287A Granted JPS6418993A (en) | 1987-07-11 | 1987-07-11 | Production of bi12sio20 single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418993A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5761263A (en) * | 1981-05-14 | 1998-06-02 | Hitachi, Ltd. | Nuclear fuel rod and method of manufacturing the same |
| US6088139A (en) * | 1995-08-31 | 2000-07-11 | Ngk Insulators, Ltd. | Method and an apparatus for recording and reproducing using a hologram, an apparatus for irradiating light for reproduction to a hologram, a hologram device and a manufacturing method of the same |
| US6398503B1 (en) | 1998-04-27 | 2002-06-04 | Kabushiki Kaisha Toshiba | High temperature component, gas turbine high temperature component and manufacturing method thereof |
-
1987
- 1987-07-11 JP JP17365287A patent/JPS6418993A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5761263A (en) * | 1981-05-14 | 1998-06-02 | Hitachi, Ltd. | Nuclear fuel rod and method of manufacturing the same |
| US6088139A (en) * | 1995-08-31 | 2000-07-11 | Ngk Insulators, Ltd. | Method and an apparatus for recording and reproducing using a hologram, an apparatus for irradiating light for reproduction to a hologram, a hologram device and a manufacturing method of the same |
| US6398503B1 (en) | 1998-04-27 | 2002-06-04 | Kabushiki Kaisha Toshiba | High temperature component, gas turbine high temperature component and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0377159B2 (en) | 1991-12-09 |
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