KR950018696A - Monocrystalline manufacturing method and apparatus used therefor - Google Patents

Monocrystalline manufacturing method and apparatus used therefor Download PDF

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Publication number
KR950018696A
KR950018696A KR1019930028502A KR930028502A KR950018696A KR 950018696 A KR950018696 A KR 950018696A KR 1019930028502 A KR1019930028502 A KR 1019930028502A KR 930028502 A KR930028502 A KR 930028502A KR 950018696 A KR950018696 A KR 950018696A
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KR
South Korea
Prior art keywords
raw material
temperature
crystal
zone
crucible
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Application number
KR1019930028502A
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Korean (ko)
Inventor
정대식
박병학
김유성
Original Assignee
조말수
포항종합제철주식회사
백덕현
재단법인산업과학기술연구소
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Application filed by 조말수, 포항종합제철주식회사, 백덕현, 재단법인산업과학기술연구소 filed Critical 조말수
Priority to KR1019930028502A priority Critical patent/KR950018696A/en
Publication of KR950018696A publication Critical patent/KR950018696A/en

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Abstract

본 발명은 단결정을 포함한 결정제조 방법에 관한 것이다.The present invention relates to a crystal manufacturing method including a single crystal.

이 방법은 온도구배가 형성되어 있는 가열로내에서 원료용액을 상부에 위치한 고온대로부터 이와 격리되어 하부에 위치한 저온대로 적상(滴狀) 낙하시켜 저온대에 있는 결정종자 표면에서 서서히 고화시켜 결정을 성장시키는 것을 특징으로 한다.In this method, the raw material solution is separated from the high temperature zone located at the top in the heating furnace in which the temperature gradient is formed, dropping onto the low temperature zone located at the bottom, and gradually solidified on the crystal seed surface in the low temperature zone. It is characterized by growing.

본 발명의 방법은 종래의 방법보다 간단할 뿐만 아니라 경제적인 것이다.The method of the present invention is simpler and more economical than conventional methods.

본 발명에 의하면 결정형성 장치가 또한 제공된다.According to the present invention there is also provided a crystal forming apparatus.

Description

단 결정 제조방법 및 이에 사용되는 장치Monocrystalline manufacturing method and apparatus used therefor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의한 장치의 일예를 나타내는 개략도 및 그 장치에 있어서의 고온대와 저온대 사이의 온도구배를 나타내는 그래프이다.1 is a schematic view showing an example of an apparatus according to the present invention and a graph showing a temperature gradient between a high temperature zone and a low temperature zone in the apparatus.

Claims (4)

온도구배가 형성되어 있는 가열로내에서 원료 용액을 상부의 고온대로부터 이와 격리되어 하부에 위치한 하부저온대로 적상(滴狀) 낙하시켜 종자결정의 계면에서 서서히 고화(固化)함에 의해 결정을 성장시키는 것을 특징으로 하는 결정제조방법.In the heating furnace in which the temperature gradient is formed, the raw material solution is separated from the high temperature zone of the upper part and dropped dropwise to the lower low temperature located at the lower part to grow the crystal by solidifying gradually at the interface of the seed crystal. Crystal production method characterized in that. 제1항에 있어서, 상기 고온대는 원료의 융점보다 높은 온도로 유지되고 상기 저온대는 원료의 융점과 같거나 이보다 낮은 온도로 유지되도록 온도구배가 형성됨을 특징으로 하는 방법.The method of claim 1, wherein a temperature gradient is formed such that the hot zone is maintained at a temperature higher than the melting point of the raw material and the cold zone is maintained at a temperature equal to or lower than the melting point of the raw material. 1항에 있어서, 상기 결정은 단결정임을 특징으로 하는 방법.The method of claim 1 wherein the crystal is a single crystal. 내부에 원료(1)을 장입하고, 그 원료(1)을 융해시키도록 가열하는 가열수단(9)이 주위에 설치되어 있으며, 가열에 의해 융해된 원료용액(2)을 하부로 적상 유출하는 노즐(3)이 저부에 형성된 고온대 도가니(4); 및 상기 고온대 도가니(4)와 거리를 두고 하방으로 격리되어 위치하며, 종자봉 또는 종자관(5)을 보자하며, 상기 고온대 도가니(4)의 노즐(3)을 통해 적상낙하하는 용액이 내부의 종자결정의 계면으로 흐르면서 고화되도록 상부로 부터 낙하하는 적상의 원료용액(2)를 받고, 가열수단(9')이 주위에 배치되어 있으며, 하강 및 회전하게 되어 있는, 저온대 도가니; 를 포함하고, 상기 고온대 도가니(4)와 저온대 도가니(7)은 고온대의 온도가 원료의 융점보다 높게 유지되고 저온대의 온도는 원료의 융점과 같거나 이보다 낮은 온도로 유지되게 온도구배가 형성되어 있는 결정제조장치A nozzle for charging the raw material 1 therein and heating means 9 for heating the raw material 1 so as to fuse the raw material 1 therein, and dropping the raw material solution 2 melted by heating to the bottom. (3) a hot zone crucible (4) formed at the bottom; And located below and separated from the hot zone crucible 4 at a distance, and let a seed rod or seed tube 5 be seen, and a solution dropping through the nozzle 3 of the hot zone crucible 4 is dropped. A low temperature crucible, receiving a raw material solution 2 falling from the top so as to solidify while flowing through the interface of the seed crystals inside, the heating means 9 'being arranged around, and being lowered and rotated; The high temperature zone crucible 4 and the low temperature zone crucible 7 include a temperature gradient such that the temperature of the high temperature zone is maintained higher than the melting point of the raw material and the temperature of the low temperature zone is maintained at or equal to or lower than the melting point of the raw material. Crystal manufacturing equipment ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930028502A 1993-12-18 1993-12-18 Monocrystalline manufacturing method and apparatus used therefor KR950018696A (en)

Priority Applications (1)

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KR1019930028502A KR950018696A (en) 1993-12-18 1993-12-18 Monocrystalline manufacturing method and apparatus used therefor

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Application Number Priority Date Filing Date Title
KR1019930028502A KR950018696A (en) 1993-12-18 1993-12-18 Monocrystalline manufacturing method and apparatus used therefor

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KR950018696A true KR950018696A (en) 1995-07-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030020809A (en) * 2001-09-04 2003-03-10 전우용 Appratus and method of sapphire production by high frequency reduction heating process
KR100689623B1 (en) * 2005-08-08 2007-03-08 성균관대학교산학협력단 apparatus for growing single crystal of semiconductor device and emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030020809A (en) * 2001-09-04 2003-03-10 전우용 Appratus and method of sapphire production by high frequency reduction heating process
KR100689623B1 (en) * 2005-08-08 2007-03-08 성균관대학교산학협력단 apparatus for growing single crystal of semiconductor device and emitting device

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