KR950018696A - Monocrystalline manufacturing method and apparatus used therefor - Google Patents
Monocrystalline manufacturing method and apparatus used therefor Download PDFInfo
- Publication number
- KR950018696A KR950018696A KR1019930028502A KR930028502A KR950018696A KR 950018696 A KR950018696 A KR 950018696A KR 1019930028502 A KR1019930028502 A KR 1019930028502A KR 930028502 A KR930028502 A KR 930028502A KR 950018696 A KR950018696 A KR 950018696A
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- raw material
- temperature
- crystal
- zone
- crucible
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Abstract
본 발명은 단결정을 포함한 결정제조 방법에 관한 것이다.The present invention relates to a crystal manufacturing method including a single crystal.
이 방법은 온도구배가 형성되어 있는 가열로내에서 원료용액을 상부에 위치한 고온대로부터 이와 격리되어 하부에 위치한 저온대로 적상(滴狀) 낙하시켜 저온대에 있는 결정종자 표면에서 서서히 고화시켜 결정을 성장시키는 것을 특징으로 한다.In this method, the raw material solution is separated from the high temperature zone located at the top in the heating furnace in which the temperature gradient is formed, dropping onto the low temperature zone located at the bottom, and gradually solidified on the crystal seed surface in the low temperature zone. It is characterized by growing.
본 발명의 방법은 종래의 방법보다 간단할 뿐만 아니라 경제적인 것이다.The method of the present invention is simpler and more economical than conventional methods.
본 발명에 의하면 결정형성 장치가 또한 제공된다.According to the present invention there is also provided a crystal forming apparatus.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 의한 장치의 일예를 나타내는 개략도 및 그 장치에 있어서의 고온대와 저온대 사이의 온도구배를 나타내는 그래프이다.1 is a schematic view showing an example of an apparatus according to the present invention and a graph showing a temperature gradient between a high temperature zone and a low temperature zone in the apparatus.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930028502A KR950018696A (en) | 1993-12-18 | 1993-12-18 | Monocrystalline manufacturing method and apparatus used therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930028502A KR950018696A (en) | 1993-12-18 | 1993-12-18 | Monocrystalline manufacturing method and apparatus used therefor |
Publications (1)
Publication Number | Publication Date |
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KR950018696A true KR950018696A (en) | 1995-07-22 |
Family
ID=66851120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019930028502A KR950018696A (en) | 1993-12-18 | 1993-12-18 | Monocrystalline manufacturing method and apparatus used therefor |
Country Status (1)
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KR (1) | KR950018696A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030020809A (en) * | 2001-09-04 | 2003-03-10 | 전우용 | Appratus and method of sapphire production by high frequency reduction heating process |
KR100689623B1 (en) * | 2005-08-08 | 2007-03-08 | 성균관대학교산학협력단 | apparatus for growing single crystal of semiconductor device and emitting device |
-
1993
- 1993-12-18 KR KR1019930028502A patent/KR950018696A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030020809A (en) * | 2001-09-04 | 2003-03-10 | 전우용 | Appratus and method of sapphire production by high frequency reduction heating process |
KR100689623B1 (en) * | 2005-08-08 | 2007-03-08 | 성균관대학교산학협력단 | apparatus for growing single crystal of semiconductor device and emitting device |
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |