JPS54141389A - Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible - Google Patents
Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucibleInfo
- Publication number
- JPS54141389A JPS54141389A JP5028478A JP5028478A JPS54141389A JP S54141389 A JPS54141389 A JP S54141389A JP 5028478 A JP5028478 A JP 5028478A JP 5028478 A JP5028478 A JP 5028478A JP S54141389 A JPS54141389 A JP S54141389A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal growing
- crystal
- melt
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain a Si single crystal of high purity of forming a silicon nitride film along the inside of a crucible and pulling a crystal from a melt in the crucible to prevent silicon nitride from melting into the melt.
CONSTITUTION: Quartz crucible 6' is mounted on crucible support 5 in crystal growing furnace 1, and NH3-contg. gas or liquid 21 and Si cpd. 22 such as SiH4 are introduced 2 into crucible 1 through control valves 23, 24 respectively. Furnace 1 is then heated with heater 7 to react NH3 and Si cpd.-contg. gas, forming silicon nitride film 30 along the inside of crucible 6'. A crystal material such as Si is charged into resulting crucible 6, an inert gas is introduced 2 into furnace 1, and crucible 6 is heated to obtain melt 8. Single crystal 12 of Si or the like is pulled from melt 8 with pulling rod 10 provided with seed crystal 11.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5028478A JPS54141389A (en) | 1978-04-27 | 1978-04-27 | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5028478A JPS54141389A (en) | 1978-04-27 | 1978-04-27 | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54141389A true JPS54141389A (en) | 1979-11-02 |
Family
ID=12854614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5028478A Pending JPS54141389A (en) | 1978-04-27 | 1978-04-27 | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54141389A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54157781A (en) * | 1978-06-02 | 1979-12-12 | Toshiba Ceramics Co | Silicon single crystal manufacturing apparatus |
JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
CN108288769A (en) * | 2016-12-20 | 2018-07-17 | 矢崎总业株式会社 | Terminal compression joint constructs and the connector of tape cable |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3041690A (en) * | 1956-12-31 | 1962-07-03 | Hughes Aircraft Co | Processing semiconductor material |
-
1978
- 1978-04-27 JP JP5028478A patent/JPS54141389A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3041690A (en) * | 1956-12-31 | 1962-07-03 | Hughes Aircraft Co | Processing semiconductor material |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54157781A (en) * | 1978-06-02 | 1979-12-12 | Toshiba Ceramics Co | Silicon single crystal manufacturing apparatus |
JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
CN108288769A (en) * | 2016-12-20 | 2018-07-17 | 矢崎总业株式会社 | Terminal compression joint constructs and the connector of tape cable |
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