JPS54141389A - Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible - Google Patents

Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible

Info

Publication number
JPS54141389A
JPS54141389A JP5028478A JP5028478A JPS54141389A JP S54141389 A JPS54141389 A JP S54141389A JP 5028478 A JP5028478 A JP 5028478A JP 5028478 A JP5028478 A JP 5028478A JP S54141389 A JPS54141389 A JP S54141389A
Authority
JP
Japan
Prior art keywords
crucible
crystal growing
crystal
melt
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5028478A
Other languages
Japanese (ja)
Inventor
Yutaka Yoriume
Seiji Shinoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5028478A priority Critical patent/JPS54141389A/en
Publication of JPS54141389A publication Critical patent/JPS54141389A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain a Si single crystal of high purity of forming a silicon nitride film along the inside of a crucible and pulling a crystal from a melt in the crucible to prevent silicon nitride from melting into the melt.
CONSTITUTION: Quartz crucible 6' is mounted on crucible support 5 in crystal growing furnace 1, and NH3-contg. gas or liquid 21 and Si cpd. 22 such as SiH4 are introduced 2 into crucible 1 through control valves 23, 24 respectively. Furnace 1 is then heated with heater 7 to react NH3 and Si cpd.-contg. gas, forming silicon nitride film 30 along the inside of crucible 6'. A crystal material such as Si is charged into resulting crucible 6, an inert gas is introduced 2 into furnace 1, and crucible 6 is heated to obtain melt 8. Single crystal 12 of Si or the like is pulled from melt 8 with pulling rod 10 provided with seed crystal 11.
COPYRIGHT: (C)1979,JPO&Japio
JP5028478A 1978-04-27 1978-04-27 Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible Pending JPS54141389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5028478A JPS54141389A (en) 1978-04-27 1978-04-27 Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5028478A JPS54141389A (en) 1978-04-27 1978-04-27 Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible

Publications (1)

Publication Number Publication Date
JPS54141389A true JPS54141389A (en) 1979-11-02

Family

ID=12854614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5028478A Pending JPS54141389A (en) 1978-04-27 1978-04-27 Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible

Country Status (1)

Country Link
JP (1) JPS54141389A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157781A (en) * 1978-06-02 1979-12-12 Toshiba Ceramics Co Silicon single crystal manufacturing apparatus
JP2007534590A (en) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー Silicon crystallization crucible
CN108288769A (en) * 2016-12-20 2018-07-17 矢崎总业株式会社 Terminal compression joint constructs and the connector of tape cable

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041690A (en) * 1956-12-31 1962-07-03 Hughes Aircraft Co Processing semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041690A (en) * 1956-12-31 1962-07-03 Hughes Aircraft Co Processing semiconductor material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157781A (en) * 1978-06-02 1979-12-12 Toshiba Ceramics Co Silicon single crystal manufacturing apparatus
JP2007534590A (en) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー Silicon crystallization crucible
CN108288769A (en) * 2016-12-20 2018-07-17 矢崎总业株式会社 Terminal compression joint constructs and the connector of tape cable

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