JPS54157781A - Silicon single crystal manufacturing apparatus - Google Patents

Silicon single crystal manufacturing apparatus

Info

Publication number
JPS54157781A
JPS54157781A JP6657378A JP6657378A JPS54157781A JP S54157781 A JPS54157781 A JP S54157781A JP 6657378 A JP6657378 A JP 6657378A JP 6657378 A JP6657378 A JP 6657378A JP S54157781 A JPS54157781 A JP S54157781A
Authority
JP
Japan
Prior art keywords
single crystal
manufacturing apparatus
silicon single
crystal manufacturing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6657378A
Other languages
Japanese (ja)
Inventor
Hideo Nagashima
Hideyasu Matsuo
Akio Karita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP6657378A priority Critical patent/JPS54157781A/en
Publication of JPS54157781A publication Critical patent/JPS54157781A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP6657378A 1978-06-02 1978-06-02 Silicon single crystal manufacturing apparatus Pending JPS54157781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6657378A JPS54157781A (en) 1978-06-02 1978-06-02 Silicon single crystal manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6657378A JPS54157781A (en) 1978-06-02 1978-06-02 Silicon single crystal manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPS54157781A true JPS54157781A (en) 1979-12-12

Family

ID=13319826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6657378A Pending JPS54157781A (en) 1978-06-02 1978-06-02 Silicon single crystal manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPS54157781A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356152A (en) * 1981-03-13 1982-10-26 Rca Corporation Silicon melting crucible
US4668481A (en) * 1984-04-23 1987-05-26 Kabushiki Kaisha Toshiba Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
JPS6418986A (en) * 1987-07-13 1989-01-23 Toyo Tanso Co Single crystal-lifting unit
JPH01145312A (en) * 1987-11-30 1989-06-07 Toshiro Yamashina Production of carbon material having small amount of out gas and carbon structural material using said carbon material obtained by said production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141389A (en) * 1978-04-27 1979-11-02 Nippon Telegr & Teleph Corp <Ntt> Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141389A (en) * 1978-04-27 1979-11-02 Nippon Telegr & Teleph Corp <Ntt> Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356152A (en) * 1981-03-13 1982-10-26 Rca Corporation Silicon melting crucible
US4668481A (en) * 1984-04-23 1987-05-26 Kabushiki Kaisha Toshiba Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
JPS6418986A (en) * 1987-07-13 1989-01-23 Toyo Tanso Co Single crystal-lifting unit
JPH01145312A (en) * 1987-11-30 1989-06-07 Toshiro Yamashina Production of carbon material having small amount of out gas and carbon structural material using said carbon material obtained by said production

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