JPS54157781A - Silicon single crystal manufacturing apparatus - Google Patents
Silicon single crystal manufacturing apparatusInfo
- Publication number
- JPS54157781A JPS54157781A JP6657378A JP6657378A JPS54157781A JP S54157781 A JPS54157781 A JP S54157781A JP 6657378 A JP6657378 A JP 6657378A JP 6657378 A JP6657378 A JP 6657378A JP S54157781 A JPS54157781 A JP S54157781A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- manufacturing apparatus
- silicon single
- crystal manufacturing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6657378A JPS54157781A (en) | 1978-06-02 | 1978-06-02 | Silicon single crystal manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6657378A JPS54157781A (en) | 1978-06-02 | 1978-06-02 | Silicon single crystal manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54157781A true JPS54157781A (en) | 1979-12-12 |
Family
ID=13319826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6657378A Pending JPS54157781A (en) | 1978-06-02 | 1978-06-02 | Silicon single crystal manufacturing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54157781A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356152A (en) * | 1981-03-13 | 1982-10-26 | Rca Corporation | Silicon melting crucible |
US4668481A (en) * | 1984-04-23 | 1987-05-26 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process |
JPS6418986A (en) * | 1987-07-13 | 1989-01-23 | Toyo Tanso Co | Single crystal-lifting unit |
JPH01145312A (en) * | 1987-11-30 | 1989-06-07 | Toshiro Yamashina | Production of carbon material having small amount of out gas and carbon structural material using said carbon material obtained by said production |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54141389A (en) * | 1978-04-27 | 1979-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible |
-
1978
- 1978-06-02 JP JP6657378A patent/JPS54157781A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54141389A (en) * | 1978-04-27 | 1979-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356152A (en) * | 1981-03-13 | 1982-10-26 | Rca Corporation | Silicon melting crucible |
US4668481A (en) * | 1984-04-23 | 1987-05-26 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process |
JPS6418986A (en) * | 1987-07-13 | 1989-01-23 | Toyo Tanso Co | Single crystal-lifting unit |
JPH01145312A (en) * | 1987-11-30 | 1989-06-07 | Toshiro Yamashina | Production of carbon material having small amount of out gas and carbon structural material using said carbon material obtained by said production |
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