JPS55100294A - Crystal growing device - Google Patents

Crystal growing device

Info

Publication number
JPS55100294A
JPS55100294A JP16807179A JP16807179A JPS55100294A JP S55100294 A JPS55100294 A JP S55100294A JP 16807179 A JP16807179 A JP 16807179A JP 16807179 A JP16807179 A JP 16807179A JP S55100294 A JPS55100294 A JP S55100294A
Authority
JP
Japan
Prior art keywords
crystal growing
growing device
crystal
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16807179A
Other languages
Japanese (ja)
Inventor
Shiyumitsuto Furederitsuku
Pii Kuhatsutatsuku Chiyandora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Crystal Systems Corp
Original Assignee
Crystal Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Systems Corp filed Critical Crystal Systems Corp
Publication of JPS55100294A publication Critical patent/JPS55100294A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
JP16807179A 1979-01-18 1979-12-24 Crystal growing device Pending JPS55100294A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US446579A 1979-01-18 1979-01-18

Publications (1)

Publication Number Publication Date
JPS55100294A true JPS55100294A (en) 1980-07-31

Family

ID=21710948

Family Applications (2)

Application Number Title Priority Date Filing Date
JP16807179A Pending JPS55100294A (en) 1979-01-18 1979-12-24 Crystal growing device
JP4669880A Pending JPS569298A (en) 1979-01-18 1980-04-09 Method of growing silicon crystal

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP4669880A Pending JPS569298A (en) 1979-01-18 1980-04-09 Method of growing silicon crystal

Country Status (7)

Country Link
JP (2) JPS55100294A (en)
BE (1) BE880839A (en)
DE (1) DE3001815A1 (en)
FR (1) FR2446873A1 (en)
GB (1) GB2041236A (en)
IT (1) IT1192791B (en)
NL (1) NL8000094A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505935A (en) * 2005-08-25 2009-02-12 クリスタル・システムズ，インコーポレーテッド Apparatus and method for crystal growth

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
DE19831388A1 (en) 1997-07-16 1999-01-21 Oliver Hugo Method and apparatus for producing workpieces or blocks out of a meltable material
FR2918675B1 (en) 2007-07-10 2009-08-28 Commissariat Energie Atomique DEVICE FOR MANUFACTURING BLOCK OF CRYSTALLINE MATERIAL WITH MODULATION OF THERMAL CONDUCTIVITY.
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505935A (en) * 2005-08-25 2009-02-12 クリスタル・システムズ，インコーポレーテッド Apparatus and method for crystal growth

Also Published As

Publication number Publication date
DE3001815A1 (en) 1980-07-31
IT1192791B (en) 1988-05-04
JPS569298A (en) 1981-01-30
NL8000094A (en) 1980-07-22
FR2446873A1 (en) 1980-08-14
IT7969384A0 (en) 1979-12-12
BE880839A (en) 1980-04-16
GB2041236A (en) 1980-09-10

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