FR2446873A1 - DEVICE AND METHOD FOR GROWING VACUUM SILICON CRYSTALS FROM MOLTEN MATERIAL - Google Patents

DEVICE AND METHOD FOR GROWING VACUUM SILICON CRYSTALS FROM MOLTEN MATERIAL

Info

Publication number
FR2446873A1
FR2446873A1 FR7930855A FR7930855A FR2446873A1 FR 2446873 A1 FR2446873 A1 FR 2446873A1 FR 7930855 A FR7930855 A FR 7930855A FR 7930855 A FR7930855 A FR 7930855A FR 2446873 A1 FR2446873 A1 FR 2446873A1
Authority
FR
France
Prior art keywords
crucible
silicon crystals
molten material
vacuum silicon
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7930855A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRYSTAL SYSTEMS Inc
Crystal Systems Inc USA
Original Assignee
CRYSTAL SYSTEMS Inc
Crystal Systems Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CRYSTAL SYSTEMS Inc, Crystal Systems Inc USA filed Critical CRYSTAL SYSTEMS Inc
Publication of FR2446873A1 publication Critical patent/FR2446873A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne un dispositif et un procédé pour faire croître des cristaux à partir de matériaux fondus. Le dispositif comprend un élément de matière dont la conductibilité calorifique est supérieure à celle de la matière du creuset 10 dans lequel se trouve la substance à traiter, en position intermédiaire entre le sommet d'un échangeur de chaleur 20 placé en relation de conductibilité avec le fond du creuset, et la surface intérieure du fond du creuset, ledit élément formant partie au moins du trajet d'évacuation de la chaleur à partir de la surface intérieure de la partie du fond du creuset jusque vers l'échangeur de chaleur. Application à la croissance des cristaux de silicium.A device and method for growing crystals from molten materials is disclosed. The device comprises an element of material whose heat conductivity is greater than that of the material of the crucible 10 in which the substance to be treated is located, in an intermediate position between the top of a heat exchanger 20 placed in conductive relation with the bottom of the crucible, and the inner surface of the bottom of the crucible, said member forming at least part of the heat removal path from the inner surface of the bottom part of the crucible to the heat exchanger. Application to the growth of silicon crystals.

FR7930855A 1979-01-18 1979-12-17 DEVICE AND METHOD FOR GROWING VACUUM SILICON CRYSTALS FROM MOLTEN MATERIAL Withdrawn FR2446873A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US446579A 1979-01-18 1979-01-18

Publications (1)

Publication Number Publication Date
FR2446873A1 true FR2446873A1 (en) 1980-08-14

Family

ID=21710948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930855A Withdrawn FR2446873A1 (en) 1979-01-18 1979-12-17 DEVICE AND METHOD FOR GROWING VACUUM SILICON CRYSTALS FROM MOLTEN MATERIAL

Country Status (7)

Country Link
JP (2) JPS55100294A (en)
BE (1) BE880839A (en)
DE (1) DE3001815A1 (en)
FR (1) FR2446873A1 (en)
GB (1) GB2041236A (en)
IT (1) IT1192791B (en)
NL (1) NL8000094A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
DE59801335D1 (en) * 1997-07-16 2001-10-04 Ald Vacuum Techn Ag METHOD AND DEVICE FOR PRODUCING WORKPIECES OR BLOCKS FROM MELTABLE MATERIALS
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
FR2918675B1 (en) * 2007-07-10 2009-08-28 Commissariat Energie Atomique DEVICE FOR MANUFACTURING BLOCK OF CRYSTALLINE MATERIAL WITH MODULATION OF THERMAL CONDUCTIVITY.
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Also Published As

Publication number Publication date
JPS569298A (en) 1981-01-30
JPS55100294A (en) 1980-07-31
BE880839A (en) 1980-04-16
GB2041236A (en) 1980-09-10
NL8000094A (en) 1980-07-22
IT7969384A0 (en) 1979-12-12
IT1192791B (en) 1988-05-04
DE3001815A1 (en) 1980-07-31

Similar Documents

Publication Publication Date Title
Laudise et al. Hydrothermal growth of large sound crystals of zinc oxide
KR960031658A (en) Manufacturing apparatus for single crystals
FR2437110A1 (en) DEVICE FOR VACUUM CAPSULE SURFACE ACOUSTIC WAVE AND MANUFACTURING METHOD
EP0833395A3 (en) Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
AU2001248256A1 (en) Method and device for growing large-volume oriented monocrystals
FR2446873A1 (en) DEVICE AND METHOD FOR GROWING VACUUM SILICON CRYSTALS FROM MOLTEN MATERIAL
FR2377887A1 (en) SUBJECT SUITABLE FOR THERMAL RECOVERY
FR2456581A1 (en) METHOD AND APPARATUS FOR FORMING METALLIC MOLDINGS WITH A FINE GRAIN STRUCTURE
FR2439663A1 (en) FLUID FILM CONTINUOUS PROCESSING DEVICE AND METHOD
PT72060A (en) PROCESS FOR PRODUCING INSTANT FOOD MATERIAL INSTANTLY DISPERSABLE IN WATER
KR900004972A (en) Method and apparatus for manufacturing silicon single crystal
BE899191A (en) PROCESS FOR THE MANUFACTURE OF MONOCRYSTALLINE PARTICLES AND THEIR USE IN ELECTROCHEMICAL CELL ANODES.
FR2444091A1 (en) CRYSTAL-GERM FOR THE EPITAXIAL SOLIDIFICATION OF AN ALLOY AND SOLIDIFICATION METHOD USING THE CRYSTAL-GERM
KR910016974A (en) Crystal Growth Method And Apparatus
FR2510986B1 (en) PROCESS FOR COOKING BLANKS AND MANUFACTURING REFRACTORY MATERIAL LINKED WITH SILICON NITRIDE
FR2789058A1 (en) CONTAINER FOR TRANSPORTING AND ACCLIMATING LIVE EXOTIC FISH OR AQUATIC PLANTS
KR900017934A (en) Monocrystalline Silicon Manufacturing Equipment
EP0781871A3 (en) Heater mechanism for crystal pulling apparatus
EP1033810A3 (en) A method of manufacturing a surface acoustic wave apparatus
GB1498925A (en) Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured
KR920702735A (en) Silicon Single Crystal Manufacturing Equipment
FR2546810B1 (en) PROCESS AND DEVICE FOR THE MANUFACTURE OF SHEETS OF PLASTIC MATERIAL OF GOOD OPTICAL QUALITY, BY CASTING
KR920701530A (en) Silicon single crystal manufacturing device
JPH0569174U (en) Board holder
Morehead The Direct Relation Between Segregation in Pulsed Laser Annealing and Equilibrium Crystal Growth

Legal Events

Date Code Title Description
ST Notification of lapse