AU2001248256A1 - Method and device for growing large-volume oriented monocrystals - Google Patents

Method and device for growing large-volume oriented monocrystals

Info

Publication number
AU2001248256A1
AU2001248256A1 AU2001248256A AU4825601A AU2001248256A1 AU 2001248256 A1 AU2001248256 A1 AU 2001248256A1 AU 2001248256 A AU2001248256 A AU 2001248256A AU 4825601 A AU4825601 A AU 4825601A AU 2001248256 A1 AU2001248256 A1 AU 2001248256A1
Authority
AU
Australia
Prior art keywords
growing large
side walls
base
crucible
monocrystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001248256A
Inventor
Hans-Jorg Axmann
Ewald Morsen
Thorsten Reichardt
Richard Schatter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUNTHER WEHRHAN
Original Assignee
GUNTHER WEHRHAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUNTHER WEHRHAN filed Critical GUNTHER WEHRHAN
Publication of AU2001248256A1 publication Critical patent/AU2001248256A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Fodder In General (AREA)

Abstract

Device for growing large volume single crystals comprises a housing (10) in which a melt crucible (20) with side walls (22), a base (24), a top opening (26) facing the base and optionally a lid (28) are located; and at least one heating element (50, 50'). At least one heating element is arranged on the side walls of the melt crucible (20) to prevent lateral radial heat flow. An independent claim is also included for a process for growing large volume single crystals using the above device. Preferred Features: The elements arranged on the side walls prevent lateral heat flow so that a planar solid/liquid phase boundary surface is formed during crystal growth which has a bending radius of at least 1 m. The base of the crucible has a conical shape.
AU2001248256A 2000-03-03 2001-03-02 Method and device for growing large-volume oriented monocrystals Abandoned AU2001248256A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10010484 2000-03-03
DE10010484A DE10010484A1 (en) 2000-03-03 2000-03-03 Device for growing large volume single crystals has heating element arranged on side walls of melt crucible to prevent lateral radial heat flow
PCT/DE2001/000790 WO2001064975A2 (en) 2000-03-03 2001-03-02 Method and device for growing large-volume oriented monocrystals

Publications (1)

Publication Number Publication Date
AU2001248256A1 true AU2001248256A1 (en) 2001-09-12

Family

ID=7633434

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001248256A Abandoned AU2001248256A1 (en) 2000-03-03 2001-03-02 Method and device for growing large-volume oriented monocrystals

Country Status (7)

Country Link
US (1) US6969502B2 (en)
EP (2) EP1259663B1 (en)
JP (1) JP4195222B2 (en)
AT (1) ATE447053T1 (en)
AU (1) AU2001248256A1 (en)
DE (2) DE10010484A1 (en)
WO (1) WO2001064975A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4017863B2 (en) * 2001-12-18 2007-12-05 信越石英株式会社 Annealing furnace and method for producing optical synthetic quartz glass
RU2002115062A (en) * 2002-05-31 2004-02-20 Корнинг Инкорпорейтид (Us) METHOD FOR GROWING CALCIUM FLUORIDE SINGLE CRYSTALS
US20040099205A1 (en) * 2002-09-03 2004-05-27 Qiao Li Method of growing oriented calcium fluoride single crystals
US7033433B2 (en) * 2003-01-24 2006-04-25 Corning Incorporated Crystal growth methods
EP1475464A1 (en) * 2003-05-06 2004-11-10 Corning Incorporated Method for producing an optical fluoride crystal
US7399360B2 (en) * 2003-07-03 2008-07-15 Hitachi Chemical Company, Ltd. Crucible and method of growing single crystal by using crucible
DE10347430B4 (en) * 2003-10-13 2006-04-27 Schott Ag Furnace for growing single crystals of molten crystal raw material
DE102004003829A1 (en) * 2004-01-26 2005-08-18 Schott Ag A method for cleaning crystal material and for producing crystals, an apparatus therefor and the use of the crystals thus obtained
DE102004008754A1 (en) * 2004-02-23 2005-09-08 Schott Ag Production of low-stress, non-(111) -oriented, large-volume single crystals with low stress birefringence and homogeneous refractive index, and their use
ATE511089T1 (en) * 2004-02-23 2011-06-15 Hellma Materials Gmbh & Co Kg METHOD FOR PRODUCING CAF2 LENS BLANKS, ESPECIALLY FOR 193 NM AND 157 NM LITHOGRAPHY WITH MINIMIZED DEFECTS
DE102004008752A1 (en) * 2004-02-23 2005-09-08 Schott Ag Production of large volume CaF 2 single crystals for use as optical devices with an optical axis parallel to the (100) or (110) crystal axis
DE102004008749A1 (en) * 2004-02-23 2005-09-08 Schott Ag A method for producing a large-scale CaF 2 single crystal with low scattering and improved laser stability, and such a crystal and its use
DE102004008753A1 (en) * 2004-02-23 2005-09-08 Schott Ag Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits
US20060201412A1 (en) * 2005-03-08 2006-09-14 Christian Poetisch Method of making highly uniform low-stress single crystals with reduced scattering
DE102005059531A1 (en) * 2005-12-13 2007-06-14 Schott Ag Preparation of highly pure, preferably radiation-stable large volume single crystals, useful in e.g. lenses, comprises producing a melt obtained from crystal raw material and controlled cooling under solidification
DE102006017621B4 (en) * 2006-04-12 2008-12-24 Schott Ag Apparatus and method for producing multicrystalline silicon
JP4388538B2 (en) * 2006-09-21 2009-12-24 新日本製鐵株式会社 Silicon carbide single crystal manufacturing equipment
DE102008033548A1 (en) 2008-07-17 2010-01-21 Schott Ag Optimizing division of crystalline starting body in defect-poor region, comprises determining position of crystal axes and three-dimensional shape of the body, and fixing useful volume by determining location of crystal defects in the body
DE102009015113A1 (en) 2009-03-31 2010-10-14 Schott Ag Device for growing large-volume single crystals, comprises crucible, which is surrounded by jacket heating element and disposes on both sides over movable insulation elements, where the jacket heating element is upwardly movably arranged
KR101136143B1 (en) * 2009-09-05 2012-04-17 주식회사 크리스텍 Method and Apparatus for Growing Sapphire Single Crystal
FR2951739B1 (en) * 2009-11-30 2011-12-23 Commissariat Energie Atomique DEVICE FOR MONITORING THE PROGRESS OF CRYSTALLIZATION OF A BATH OF MOLTEN MATERIAL IN A DIRECTED SOLIDIFICATION PROCESS USING ULTRASOUND
WO2013019399A2 (en) * 2011-08-04 2013-02-07 Gtat Corporation Method for producing a monocrystalline product
CN103160934B (en) * 2011-12-18 2016-05-18 洛阳金诺机械工程有限公司 Thermograde control device and method thereof when a kind of grown crystal material
CN102660767B (en) * 2012-05-28 2015-06-10 哈尔滨工业大学 Cooling transitional joint for directional solidification equipment of electromagnetic cold crucible
CN102766901B (en) * 2012-08-20 2015-09-30 元亮科技有限公司 The device and method of real-time, tunable Growth by Temperature Gradient Technique large size high temperature crystal
CN103409790B (en) * 2013-08-01 2016-02-03 安徽大晟新能源设备科技有限公司 The lower well heater hoisting appliance of accurate single-crystal ingot casting furnace
US20170239386A1 (en) 2014-08-18 2017-08-24 University Of Cincinnati Magnesium single crystal for biomedical applications and methods of making same
CN108821340B (en) * 2018-09-17 2024-05-14 大冶市都鑫摩擦粉体有限公司 Antimony sulfide purification device
CN115233214A (en) * 2022-07-25 2022-10-25 江苏大学 Vibration-assisted global transient heating shaft part cladding device and method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086424A (en) * 1977-03-31 1978-04-25 Mellen Sr Robert H Dynamic gradient furnace and method
US4286424A (en) * 1980-04-11 1981-09-01 Deere & Company Blockage detector for a cotton harvester
DE3323896A1 (en) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Process and apparatus for the directed solidification of melts
JPS6470880A (en) 1987-09-10 1989-03-16 Minolta Camera Kk Digital image processor
US5116456A (en) 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5372088A (en) * 1991-12-30 1994-12-13 At&T Bell Laboratories Crystal growth method and apparatus
JPH10101484A (en) 1996-09-30 1998-04-21 Canon Inc Crystal production apparatus and method thereof
JPH10260349A (en) * 1997-03-18 1998-09-29 Nikon Corp Image formation optical system for ultraviolet-ray laser
JP3988217B2 (en) * 1997-09-09 2007-10-10 株式会社ニコン Large-diameter fluorite manufacturing apparatus and manufacturing method
JP4154744B2 (en) 1997-12-01 2008-09-24 株式会社ニコン Calcium fluoride crystal production method and raw material treatment method
DE69910863T2 (en) 1998-02-26 2004-07-15 Nikon Corp. Process for the preparation of calcium fluoride and calcium fluoride for photolithography
JP4092515B2 (en) * 1998-02-27 2008-05-28 株式会社ニコン Fluorite manufacturing method
JP2000034193A (en) * 1998-07-16 2000-02-02 Nikon Corp Heat treatment and production of fluoride single crystal
DE19912484A1 (en) * 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Device for the production of single crystals
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6806069B2 (en) * 2001-01-09 2004-10-19 Pharmachem Laboratories, Inc. Ubiquinone composition and methods related thereto

Also Published As

Publication number Publication date
DE50115195D1 (en) 2009-12-10
WO2001064975A2 (en) 2001-09-07
DE10010484A1 (en) 2001-09-13
EP1754809A2 (en) 2007-02-21
EP1754809A3 (en) 2010-03-17
EP1259663A2 (en) 2002-11-27
ATE447053T1 (en) 2009-11-15
JP4195222B2 (en) 2008-12-10
US20030089307A1 (en) 2003-05-15
US6969502B2 (en) 2005-11-29
EP1259663B1 (en) 2009-10-28
WO2001064975A8 (en) 2002-04-11
JP2003525196A (en) 2003-08-26
WO2001064975A3 (en) 2001-12-06

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