JPS5776821A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS5776821A
JPS5776821A JP15313880A JP15313880A JPS5776821A JP S5776821 A JPS5776821 A JP S5776821A JP 15313880 A JP15313880 A JP 15313880A JP 15313880 A JP15313880 A JP 15313880A JP S5776821 A JPS5776821 A JP S5776821A
Authority
JP
Japan
Prior art keywords
wafers
holding body
liquid phase
crucible
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15313880A
Other languages
Japanese (ja)
Inventor
Shinichi Kasahara
Toshihiro Suzuki
Kazuyuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15313880A priority Critical patent/JPS5776821A/en
Publication of JPS5776821A publication Critical patent/JPS5776821A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To make it possible to grow crystals uniformly for bubble memory on a plurality of wafers simultaneously, by using a holding body, which holds a plurality of growing wafers approximately horizontally and has a specified slant angle, and a crucible, and performing the liquid phase epitaxial growth. CONSTITUTION:The holding body 21, which holds a plurality of the wafers 5, comprises two arms 23 extended from a tubular body 22 and flat conical plate 24. The flat conical plate 24 has a slope of about 5 deg. with respect to a horizontal plane. A through hole 26 and six wafer holding dishes 25 with pawls 27 which securely hold the wafers 5 are formed. The holding body 21 accommodating the wafers 5 is immersed in melt 29 in the crucible 28 wherein melted crystal component is poured with the umbrella shaped plate downward. heaters 30 and 30' uniformly keep the growing temperature in the melt at a bout 900 deg.. An auxiliary heater H (30') is inserted in the through hole 26. In this method many magnetic thin films having uniform characteristics can be obtained, and the attachment of flux is little.
JP15313880A 1980-10-31 1980-10-31 Liquid phase epitaxial growing method Pending JPS5776821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15313880A JPS5776821A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15313880A JPS5776821A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5776821A true JPS5776821A (en) 1982-05-14

Family

ID=15555831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15313880A Pending JPS5776821A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5776821A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231667B1 (en) * 1997-11-28 2001-05-15 Canon Kabushiki Kaisha Liquid phase growth method and liquid phase growth apparatus
US6338755B1 (en) * 1999-07-08 2002-01-15 The University Of Tokyo Method for producing a single crystalline member
US6802900B2 (en) 2000-12-28 2004-10-12 Canon Kabushiki Kaisha Liquid phase growth methods and liquid phase growth apparatus
JP2015006975A (en) * 2013-05-27 2015-01-15 住友金属鉱山株式会社 Method and apparatus for producing aluminum nitride crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231667B1 (en) * 1997-11-28 2001-05-15 Canon Kabushiki Kaisha Liquid phase growth method and liquid phase growth apparatus
US6338755B1 (en) * 1999-07-08 2002-01-15 The University Of Tokyo Method for producing a single crystalline member
US6802900B2 (en) 2000-12-28 2004-10-12 Canon Kabushiki Kaisha Liquid phase growth methods and liquid phase growth apparatus
JP2015006975A (en) * 2013-05-27 2015-01-15 住友金属鉱山株式会社 Method and apparatus for producing aluminum nitride crystal

Similar Documents

Publication Publication Date Title
US4243472A (en) Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth
US7615115B2 (en) Liquid-phase growth apparatus and method
JPS5776821A (en) Liquid phase epitaxial growing method
US4191365A (en) Horizontal/inclined substrate holder for liquid phase epitaxy
US3809010A (en) Apparatus for growing of epitaxial layers
JPS56149399A (en) Liquid phase epitaxial growing method
JPS5649520A (en) Vapor growth of compound semiconductor
JPS5776822A (en) Method of liquid phase epitaxial growth
JPH10152393A (en) Growth of bulk crystal and seed crystal for bulk crystal growth
JPS5742598A (en) Liquid-phase epitaxial growing method
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS5696883A (en) Manufacture of silicon carbide diode
JPS63144189A (en) Apparatus for liquid epitaxy
JPS5550619A (en) Manufacturing single crystal
JPH03183691A (en) Growing method for single crystal
SHLICHTA Method and apparatus for minimizing convection during crystal growth from solution[Patent Application]
JPS56114316A (en) Boat for liquid phase epitaxial growth
JPS5683933A (en) Liquid phase epitaxial growth
JPH0369591A (en) Method for growing crystal of semiconductor
BENZ et al. Crystal growth of 3-5 semiconductors by the traveling-heater-method with respect to microgravity(Spacelab payload feasibility study)[Final Report]
JPS5711898A (en) Liquid-phase epitaxial growth
JPH04265293A (en) Method for growing liquid phase epitaxy and production device therefor
JPH0426583A (en) Crystal growing method and crystal growing device for znse
JPS5673700A (en) Liquid phase epitaxially growing method
JPS5768020A (en) Liquid phase epitaxially growing method