JPS5550619A - Manufacturing single crystal - Google Patents
Manufacturing single crystalInfo
- Publication number
- JPS5550619A JPS5550619A JP12413178A JP12413178A JPS5550619A JP S5550619 A JPS5550619 A JP S5550619A JP 12413178 A JP12413178 A JP 12413178A JP 12413178 A JP12413178 A JP 12413178A JP S5550619 A JPS5550619 A JP S5550619A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- solution
- single crystal
- temperature
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To manufacture a single crystal having excellent quality by immersing a nuclear crystal into solution, raising the temperature of the solution with the crystal material being supplied, over-saturating the surface of the crystal, depositing and growing the excessive Si on the crystal surface, and hence by only providing the difference in temperatures.
CONSTITUTION: An Si nuclear crystal 1 is held by a holder 3 which is made of an excellent heat conductive material. Solution 2 is put in a crucible 4. The Si crystal is melted near the saturation in the solvent comprising melted Al and is held at a temperature slightly higher than the melting point of Al by a heater 5, and placed in flowing gas such as Ar, N2, and the like. At this time, the crystal 1 is immersed in the solution 2, and the temperature of the solution 2 is raised with a crystal material 6 being supplied. Then, the surface of the crystal 1 becomes over-saturated, the excessive Si is deposited on the surface of the crystal 1, and the single crystal begins to grow. The single crystal is raised very slowly for growing. In this method, the single crystal can be manufactured excellently by only providing the difference in temperatures.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12413178A JPS5550619A (en) | 1978-10-11 | 1978-10-11 | Manufacturing single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12413178A JPS5550619A (en) | 1978-10-11 | 1978-10-11 | Manufacturing single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5550619A true JPS5550619A (en) | 1980-04-12 |
Family
ID=14877679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12413178A Pending JPS5550619A (en) | 1978-10-11 | 1978-10-11 | Manufacturing single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550619A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6051693A (en) * | 1983-08-30 | 1985-03-23 | Hitachi Cable Ltd | Method and apparatus for growing crystal |
-
1978
- 1978-10-11 JP JP12413178A patent/JPS5550619A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6051693A (en) * | 1983-08-30 | 1985-03-23 | Hitachi Cable Ltd | Method and apparatus for growing crystal |
| JPS6357398B2 (en) * | 1983-08-30 | 1988-11-11 | Hitachi Cable |
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