JPS643005A - Production of silicon ingot - Google Patents

Production of silicon ingot

Info

Publication number
JPS643005A
JPS643005A JP15846287A JP15846287A JPS643005A JP S643005 A JPS643005 A JP S643005A JP 15846287 A JP15846287 A JP 15846287A JP 15846287 A JP15846287 A JP 15846287A JP S643005 A JPS643005 A JP S643005A
Authority
JP
Japan
Prior art keywords
crucible
silicon
heater
heating
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15846287A
Other languages
Japanese (ja)
Other versions
JPH013005A (en
Inventor
Toshiaki Fujiwara
Masao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Industrial Devices SUNX Co Ltd
Original Assignee
Sunx Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunx Ltd filed Critical Sunx Ltd
Priority to JP62-158462A priority Critical patent/JPH013005A/en
Priority claimed from JP62-158462A external-priority patent/JPH013005A/en
Publication of JPS643005A publication Critical patent/JPS643005A/en
Publication of JPH013005A publication Critical patent/JPH013005A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain the titled ingot having excellent characteristics and low defect content at a low cost, by putting silicon into a crucible, heating and melting the silicon with a heater in a heating chamber in an inert gas, slowly lowering the crucible from the heating zone without rotating the crucible and crystallizing the molten liquid.
CONSTITUTION: A crucible 5 containing silicon is placed in a heating chamber 1 and heated with a heater 6 in an inert gas atmosphere to melt the silicon in the crucible 5. the crucible 5 is slowly separated from the heating zone of the heater 6 by lowering the crucible 5 without rotating the crucible and the molten silicon is crystallized to obtain a silicon ingot. The growing direction of the crystal and the particle size of the crystal grains can be uniformized by the proper control of the cooling rate and the temperature distribution of the molten liquid. The silicon ingot produced by this process is suitable as a substrate for solar cell, etc.
COPYRIGHT: (C)1989,JPO&Japio
JP62-158462A 1987-06-25 Silicon ingot manufacturing method Pending JPH013005A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-158462A JPH013005A (en) 1987-06-25 Silicon ingot manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-158462A JPH013005A (en) 1987-06-25 Silicon ingot manufacturing method

Publications (2)

Publication Number Publication Date
JPS643005A true JPS643005A (en) 1989-01-06
JPH013005A JPH013005A (en) 1989-01-06

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008137870A (en) * 2006-12-05 2008-06-19 Osaka Titanium Technologies Co Ltd Method for producing chlorinated silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008137870A (en) * 2006-12-05 2008-06-19 Osaka Titanium Technologies Co Ltd Method for producing chlorinated silicon
JP4664892B2 (en) * 2006-12-05 2011-04-06 株式会社大阪チタニウムテクノロジーズ Method for producing silicon chloride

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