JPS5669298A - Method of growing single crystal of semiconductor - Google Patents

Method of growing single crystal of semiconductor

Info

Publication number
JPS5669298A
JPS5669298A JP14666579A JP14666579A JPS5669298A JP S5669298 A JPS5669298 A JP S5669298A JP 14666579 A JP14666579 A JP 14666579A JP 14666579 A JP14666579 A JP 14666579A JP S5669298 A JPS5669298 A JP S5669298A
Authority
JP
Japan
Prior art keywords
crystal
semiconductor
quartz
continuously
lump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14666579A
Other languages
Japanese (ja)
Inventor
Fumio Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14666579A priority Critical patent/JPS5669298A/en
Publication of JPS5669298A publication Critical patent/JPS5669298A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: As a lump of quartz is continuously inserted into the melted semiconductor, the crystal of the semiconductor is lifted and grown, thus permitting the growth of the semiconductor single crystal with a constant concentration of oxygen included in the crystal from the top of the bottom.
CONSTITUTION: The melted material for semiconductor single crystal 2 is held in a cone or truncated cone of quartz crucible 6. As the grown crystal is lifted up, the surface level of the melted material goes down and the vaporizing surface continuously diminishes. At this time, the contact area also decreases continuously. In order to keep the contact area substantially constant and compensate and moderate the reduction in oxygen concentration expressed by the segregation constant with the ratio of the contact area to the vaporization area, a quartz lump 8 that has such a symmetric shape that it does not disturb the thermal convection and temperature distribution, when necessary, is made to revolve around the same shaft as that of the seed crystal is inserted into the melted material at a constant speed continuously. For example, the lump of quartz has a cage shape.
COPYRIGHT: (C)1981,JPO&Japio
JP14666579A 1979-11-13 1979-11-13 Method of growing single crystal of semiconductor Pending JPS5669298A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14666579A JPS5669298A (en) 1979-11-13 1979-11-13 Method of growing single crystal of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14666579A JPS5669298A (en) 1979-11-13 1979-11-13 Method of growing single crystal of semiconductor

Publications (1)

Publication Number Publication Date
JPS5669298A true JPS5669298A (en) 1981-06-10

Family

ID=15412843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14666579A Pending JPS5669298A (en) 1979-11-13 1979-11-13 Method of growing single crystal of semiconductor

Country Status (1)

Country Link
JP (1) JPS5669298A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179099A (en) * 1981-04-28 1982-11-04 Toshiba Corp Manufacturing apparatus for silicon single crystal
JPH03115188A (en) * 1989-09-29 1991-05-16 Osaka Titanium Co Ltd Production of single crystal
JPH04503350A (en) * 1988-10-12 1992-06-18 シール，ハンス・ヨット Method and apparatus for crystal growth using the Czochralski method
FR2676236A1 (en) * 1991-05-07 1992-11-13 Chichibu Cement Kk METHOD AND DEVICE FOR CRYSTALLING CRYSTALS FROM A FOOD MILL
FR3045073A1 (en) * 2015-12-14 2017-06-16 Commissariat Energie Atomique PROCESS FOR MANUFACTURING A INGOT OF OXYGEN-ENRICHED SEMICONDUCTOR MATERIAL AND CRYSTALLIZATION FURNACE
WO2022103416A1 (en) * 2020-11-11 2022-05-19 Globalwafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion
CN116783333A (en) * 2020-12-31 2023-09-19 环球晶圆股份有限公司 Buffer during growth of single crystal silicon ingots
US12091769B2 (en) 2020-12-31 2024-09-17 Globalwafers Co., Ltd. Determination of mass/time ratios for buffer members used during growth of single crystal silicon ingots

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179099A (en) * 1981-04-28 1982-11-04 Toshiba Corp Manufacturing apparatus for silicon single crystal
JPH04503350A (en) * 1988-10-12 1992-06-18 シール，ハンス・ヨット Method and apparatus for crystal growth using the Czochralski method
JPH03115188A (en) * 1989-09-29 1991-05-16 Osaka Titanium Co Ltd Production of single crystal
FR2676236A1 (en) * 1991-05-07 1992-11-13 Chichibu Cement Kk METHOD AND DEVICE FOR CRYSTALLING CRYSTALS FROM A FOOD MILL
CN108495955A (en) * 2015-12-14 2018-09-04 法国原子能及替代能源委员会 Stove for crystallizing crystal ingot by oxygen-enriched semi-conducting material
WO2017102882A1 (en) * 2015-12-14 2017-06-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Furnace for crystallizing an ingot made of oxygen-enriched semiconductor material
FR3045073A1 (en) * 2015-12-14 2017-06-16 Commissariat Energie Atomique PROCESS FOR MANUFACTURING A INGOT OF OXYGEN-ENRICHED SEMICONDUCTOR MATERIAL AND CRYSTALLIZATION FURNACE
CN108495955B (en) * 2015-12-14 2021-10-22 法国原子能及替代能源委员会 Furnace for crystallizing ingots from oxygen-rich semiconductor materials
WO2022103416A1 (en) * 2020-11-11 2022-05-19 Globalwafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion
US12110609B2 (en) 2020-11-11 2024-10-08 Globalwafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion
CN116783333A (en) * 2020-12-31 2023-09-19 环球晶圆股份有限公司 Buffer during growth of single crystal silicon ingots
CN116783333B (en) * 2020-12-31 2024-07-30 环球晶圆股份有限公司 Method for growing a single crystal silicon ingot by the continuous Czochralski method
US12091769B2 (en) 2020-12-31 2024-09-17 Globalwafers Co., Ltd. Determination of mass/time ratios for buffer members used during growth of single crystal silicon ingots

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