JPS6445799A - Production of cadmium telluride based crystal - Google Patents
Production of cadmium telluride based crystalInfo
- Publication number
- JPS6445799A JPS6445799A JP20126687A JP20126687A JPS6445799A JP S6445799 A JPS6445799 A JP S6445799A JP 20126687 A JP20126687 A JP 20126687A JP 20126687 A JP20126687 A JP 20126687A JP S6445799 A JPS6445799 A JP S6445799A
- Authority
- JP
- Japan
- Prior art keywords
- cdte
- chamber
- based crystal
- contamination
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a Cadmium telluride (CdTe) based crystal of high purity without contamination with boron, by hermetically sealing a growth chamber with liquid B2O3 so as to prevent a gas in the growth vessel provided in a high-pressure chamber from leaking into the high-pressure chamber and keeping the temperature of the above-mentioned B2O3 within a given temperature range. CONSTITUTION:A crucible 1, containing CdTe melt 2 and rotatably supported by a crucible shaft 3 is placed in the interior of a growth chamber 4. A through- hole for passing a pulling up shaft 6 for pulling up a CdTe crystal 5 from the melt 2 is formed in the upper part of the chamber 4 and a receiving part 7 is formed on the through-hole. Liquid B2O3 placed in the receiving part 7 is used to prevent vapor in the interior of the chamber 4 from leaking to a high-pressure chamber 10. In this case, temperature of the above-mentioned liquid B2O3 is kept at 730-1,080 deg.C. Contamination with B due to the B2O3 vapor in the CdTe based crystal is prevented according to the method of this invention and the aimed CdTe based crystal without contamination with the B can be grown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20126687A JPS6445799A (en) | 1987-08-11 | 1987-08-11 | Production of cadmium telluride based crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20126687A JPS6445799A (en) | 1987-08-11 | 1987-08-11 | Production of cadmium telluride based crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6445799A true JPS6445799A (en) | 1989-02-20 |
Family
ID=16438103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20126687A Pending JPS6445799A (en) | 1987-08-11 | 1987-08-11 | Production of cadmium telluride based crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6445799A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309224A (en) * | 1990-10-31 | 1994-05-03 | Matsushita Electric Industrial Co., Ltd. | Apparatus for converting a television signal of a first television system into a television signal of a second television system employing a digital chrominance signal processing circuit |
| JP2016207752A (en) * | 2015-04-17 | 2016-12-08 | Ｊｘ金属株式会社 | CdTe-BASED COMPOUND SEMICONDUCTOR AND RADIATION DETECTION ELEMENT USING THE SAME |
| CN111809235A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809243A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
-
1987
- 1987-08-11 JP JP20126687A patent/JPS6445799A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309224A (en) * | 1990-10-31 | 1994-05-03 | Matsushita Electric Industrial Co., Ltd. | Apparatus for converting a television signal of a first television system into a television signal of a second television system employing a digital chrominance signal processing circuit |
| JP2016207752A (en) * | 2015-04-17 | 2016-12-08 | Ｊｘ金属株式会社 | CdTe-BASED COMPOUND SEMICONDUCTOR AND RADIATION DETECTION ELEMENT USING THE SAME |
| CN111809235A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809243A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809235B (en) * | 2020-09-08 | 2020-12-22 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
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