JPS6437488A - Production of single crystal of compound semiconductor and device therefor - Google Patents

Production of single crystal of compound semiconductor and device therefor

Info

Publication number
JPS6437488A
JPS6437488A JP19403587A JP19403587A JPS6437488A JP S6437488 A JPS6437488 A JP S6437488A JP 19403587 A JP19403587 A JP 19403587A JP 19403587 A JP19403587 A JP 19403587A JP S6437488 A JPS6437488 A JP S6437488A
Authority
JP
Japan
Prior art keywords
single crystal
vapor pressure
compound semiconductor
component elements
controlling vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19403587A
Other languages
Japanese (ja)
Inventor
Katsumi Mochizuki
Takeshi Masumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP19403587A priority Critical patent/JPS6437488A/en
Publication of JPS6437488A publication Critical patent/JPS6437488A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain single crystal having excellent stoichiometry and low defect in producing single crystal of compound semiconductor of multiple system by upright type Bridgman method, by using constitution wherein a storage chamber for component elements for controlling vapor pressure is laid below a crystal growing chamber and these chambers are connected through a communicating means with a small hole. CONSTITUTION:Single crystal of compound semiconductor of multiple system consisting of at least three elements is produced by the following method. Namely, (1) a reactor 1 having an upper crystal growing chamber 5 connected through a communicating hole 7 to a lower storage chamber 6 for component elements for controlling vapor pressure is prepared, (2) a raw material for growing single crystal is stored in the upper crystal growing chamber 5 (stored in raw material storage container 8) and elements 3 for controlling vapor pressure consisting of two or more of component elements of compound semiconductor of multiple system are sealed in the lower storage chamber 6 for component elements for controlling vapor pressure and (3) the reactor 1 is relatively transferred based on a furnace (heaters 9 and 10) having a set given temperature distribution with part >=the melting point of the component elements in the furnace to grow single crystal while controlling vapor pressure.
JP19403587A 1987-08-03 1987-08-03 Production of single crystal of compound semiconductor and device therefor Pending JPS6437488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19403587A JPS6437488A (en) 1987-08-03 1987-08-03 Production of single crystal of compound semiconductor and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19403587A JPS6437488A (en) 1987-08-03 1987-08-03 Production of single crystal of compound semiconductor and device therefor

Publications (1)

Publication Number Publication Date
JPS6437488A true JPS6437488A (en) 1989-02-08

Family

ID=16317852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19403587A Pending JPS6437488A (en) 1987-08-03 1987-08-03 Production of single crystal of compound semiconductor and device therefor

Country Status (1)

Country Link
JP (1) JPS6437488A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995022643A1 (en) * 1994-02-21 1995-08-24 Japan Energy Corporation Method of growing single crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194036A (en) * 1986-02-20 1987-08-26 Daikin Mfg Co Ltd Load transmitting lever for pull type clutch
JPS6345198A (en) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd Production of crystal of multiple system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194036A (en) * 1986-02-20 1987-08-26 Daikin Mfg Co Ltd Load transmitting lever for pull type clutch
JPS6345198A (en) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd Production of crystal of multiple system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995022643A1 (en) * 1994-02-21 1995-08-24 Japan Energy Corporation Method of growing single crystal
US5603763A (en) * 1994-02-21 1997-02-18 Japan Energy Corporation Method for growing single crystal

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