JPS6437488A - Production of single crystal of compound semiconductor and device therefor - Google Patents
Production of single crystal of compound semiconductor and device thereforInfo
- Publication number
- JPS6437488A JPS6437488A JP19403587A JP19403587A JPS6437488A JP S6437488 A JPS6437488 A JP S6437488A JP 19403587 A JP19403587 A JP 19403587A JP 19403587 A JP19403587 A JP 19403587A JP S6437488 A JPS6437488 A JP S6437488A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- vapor pressure
- compound semiconductor
- component elements
- controlling vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain single crystal having excellent stoichiometry and low defect in producing single crystal of compound semiconductor of multiple system by upright type Bridgman method, by using constitution wherein a storage chamber for component elements for controlling vapor pressure is laid below a crystal growing chamber and these chambers are connected through a communicating means with a small hole. CONSTITUTION:Single crystal of compound semiconductor of multiple system consisting of at least three elements is produced by the following method. Namely, (1) a reactor 1 having an upper crystal growing chamber 5 connected through a communicating hole 7 to a lower storage chamber 6 for component elements for controlling vapor pressure is prepared, (2) a raw material for growing single crystal is stored in the upper crystal growing chamber 5 (stored in raw material storage container 8) and elements 3 for controlling vapor pressure consisting of two or more of component elements of compound semiconductor of multiple system are sealed in the lower storage chamber 6 for component elements for controlling vapor pressure and (3) the reactor 1 is relatively transferred based on a furnace (heaters 9 and 10) having a set given temperature distribution with part >=the melting point of the component elements in the furnace to grow single crystal while controlling vapor pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19403587A JPS6437488A (en) | 1987-08-03 | 1987-08-03 | Production of single crystal of compound semiconductor and device therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19403587A JPS6437488A (en) | 1987-08-03 | 1987-08-03 | Production of single crystal of compound semiconductor and device therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437488A true JPS6437488A (en) | 1989-02-08 |
Family
ID=16317852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19403587A Pending JPS6437488A (en) | 1987-08-03 | 1987-08-03 | Production of single crystal of compound semiconductor and device therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437488A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995022643A1 (en) * | 1994-02-21 | 1995-08-24 | Japan Energy Corporation | Method of growing single crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194036A (en) * | 1986-02-20 | 1987-08-26 | Daikin Mfg Co Ltd | Load transmitting lever for pull type clutch |
JPS6345198A (en) * | 1986-04-23 | 1988-02-26 | Sumitomo Electric Ind Ltd | Production of crystal of multiple system |
-
1987
- 1987-08-03 JP JP19403587A patent/JPS6437488A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194036A (en) * | 1986-02-20 | 1987-08-26 | Daikin Mfg Co Ltd | Load transmitting lever for pull type clutch |
JPS6345198A (en) * | 1986-04-23 | 1988-02-26 | Sumitomo Electric Ind Ltd | Production of crystal of multiple system |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995022643A1 (en) * | 1994-02-21 | 1995-08-24 | Japan Energy Corporation | Method of growing single crystal |
US5603763A (en) * | 1994-02-21 | 1997-02-18 | Japan Energy Corporation | Method for growing single crystal |
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