JPS5562882A - Production of low dislocation density single crystal - Google Patents
Production of low dislocation density single crystalInfo
- Publication number
- JPS5562882A JPS5562882A JP13639878A JP13639878A JPS5562882A JP S5562882 A JPS5562882 A JP S5562882A JP 13639878 A JP13639878 A JP 13639878A JP 13639878 A JP13639878 A JP 13639878A JP S5562882 A JPS5562882 A JP S5562882A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- gas
- furnace
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain the title crystal with little thermal strain by providing an upper portion of a single crystal producing furnace with a cooling hole and a cooling gas sprayer in production of a III-V group cpd. semiconductor single crystal such as a GaAs or InP single crystal so that a growing interface is freely controlled only by changing the flow rate of cooling gas. CONSTITUTION:Ga, Si as a dopant and seed crystal 5 are set at one end of crystal growing container 4, and As at the other end. Container 4 is then placed in a crystal producing furnace evacuated and sealed. An upper portion of the furnace is provided with radiation hole 6 about equal to container 4 in size and cooling gas sprayer 7 to forcedly deprive heat upward and prevent supercooling. Thus, the temp. gradient is adjusted to 0.5deg/cm or less, supercooling becomes difficult to occur even in case of crystallization at a rate of about 10mm/hr, and dislocation due to a thermal strain is controlled. Slit 8 for spraying N2 gas is formed at the center of hole 6 to directly spray N2 gas upon the ampule. As a result, a growing interface can freely be controlled only by regulating the flow rate of the N2 gas without changing the furnace structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13639878A JPS5562882A (en) | 1978-11-06 | 1978-11-06 | Production of low dislocation density single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13639878A JPS5562882A (en) | 1978-11-06 | 1978-11-06 | Production of low dislocation density single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5562882A true JPS5562882A (en) | 1980-05-12 |
Family
ID=15174223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13639878A Pending JPS5562882A (en) | 1978-11-06 | 1978-11-06 | Production of low dislocation density single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5562882A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62265193A (en) * | 1986-05-12 | 1987-11-18 | Sumitomo Electric Ind Ltd | Production of single crystal for compound semiconductor and its device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632272A (en) * | 1979-08-22 | 1981-04-01 | Nat Marine Plastic | Transporting bag |
-
1978
- 1978-11-06 JP JP13639878A patent/JPS5562882A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632272A (en) * | 1979-08-22 | 1981-04-01 | Nat Marine Plastic | Transporting bag |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62265193A (en) * | 1986-05-12 | 1987-11-18 | Sumitomo Electric Ind Ltd | Production of single crystal for compound semiconductor and its device |
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