JPS5747795A - Manufacture of mixed single crystal - Google Patents
Manufacture of mixed single crystalInfo
- Publication number
- JPS5747795A JPS5747795A JP10945580A JP10945580A JPS5747795A JP S5747795 A JPS5747795 A JP S5747795A JP 10945580 A JP10945580 A JP 10945580A JP 10945580 A JP10945580 A JP 10945580A JP S5747795 A JPS5747795 A JP S5747795A
- Authority
- JP
- Japan
- Prior art keywords
- container
- single crystal
- mixed single
- tube
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To form a mixed single crystal contg. a component with a higher coefft. of segregation and having a uniform composition by carrying out growth from a melt by a specified method using a mixed single crystal growing container composed of the 1st and 2nd containers connected by a small tube.
CONSTITUTION: A mixed single crystal growing container 2 formed by connecting the 1st and 2nd containers 4, 5 by a narrow path 6 is used. For example, in the manufacture of a mixed single crystal of Ga(1-x)Al(x)As, As 3 is placed at one end of a quartz reaction tube 1, and the container 2 is set at the other end. After putting a GaAs seed crystal 7 and Ga in the 1st container 4 of the container 2 and Al as a component with a higher coefft. of segregation and Ga in the 2nd container 5, the tube 1 is tightly sealed. The tube 1 is then heated so as to attain a temp. distribution shown by the figure (the dotted line is for the container 5), and the temp. is dropped. When a GaAs single crystal is crystallized in the container 4, the container 5 is heated to about 1,280°C (the solid line), and while supplying an Al-rich additional melt 8 to the melt 9 in the container 4, the desired mixed single crystal is grown in the container 4.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10945580A JPS5747795A (en) | 1980-08-09 | 1980-08-09 | Manufacture of mixed single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10945580A JPS5747795A (en) | 1980-08-09 | 1980-08-09 | Manufacture of mixed single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5747795A true JPS5747795A (en) | 1982-03-18 |
Family
ID=14510663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10945580A Pending JPS5747795A (en) | 1980-08-09 | 1980-08-09 | Manufacture of mixed single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5747795A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62292690A (en) * | 1986-06-09 | 1987-12-19 | Katsumi Mochizuki | Boat for growing ii-vi compound single crystal |
| JPH026330A (en) * | 1988-03-07 | 1990-01-10 | Sanyo Electric Co Ltd | Production of superconducting material and superconducting single crystal |
| JP2001072487A (en) * | 1999-09-02 | 2001-03-21 | Natl Space Development Agency Of Japan | Production of solid solution |
-
1980
- 1980-08-09 JP JP10945580A patent/JPS5747795A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62292690A (en) * | 1986-06-09 | 1987-12-19 | Katsumi Mochizuki | Boat for growing ii-vi compound single crystal |
| JPH026330A (en) * | 1988-03-07 | 1990-01-10 | Sanyo Electric Co Ltd | Production of superconducting material and superconducting single crystal |
| JP2001072487A (en) * | 1999-09-02 | 2001-03-21 | Natl Space Development Agency Of Japan | Production of solid solution |
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