JPS57129896A - Liquid phase epitaxial growing apparatus - Google Patents
Liquid phase epitaxial growing apparatusInfo
- Publication number
- JPS57129896A JPS57129896A JP1078781A JP1078781A JPS57129896A JP S57129896 A JPS57129896 A JP S57129896A JP 1078781 A JP1078781 A JP 1078781A JP 1078781 A JP1078781 A JP 1078781A JP S57129896 A JPS57129896 A JP S57129896A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growing apparatus
- heat conductivity
- crystal
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To provide the titled growing apparatus reducing the growing speed at ends of a substrate and preventing abnormal growth at the ends by setting a member having lower heat conductivity than carbon forming a substrate support and a melt holder around the substrate holding part of the support.
CONSTITUTION: A member 9 having lower heat conductivity than carbon forming the substrate support 2 and the melt holder 3 of said growing apparatus, e.g., quartz glass having heat conductivity 1/10W1/100 time the heat conductivity of carbon is set around the recess of the support 2, i.e., the substrate holding part. When a crystal is grown by a conventional method using the resulting liq. phase epitaxial growing apparatus, since ends of a substrate 1 are enclosed by said member 9, as the growing apparatus is slowly cooled, a temp. drop of the central part of the substrate 1 is accelerated to rapidly grow the crystal at the part. The temp. of ends of the substrate 1 is dropped slower than that of the central part to slowly grow the crystal at the ends. Accordingly, a crystal layer 7 is obtd. without forming an abnormally grown layer, i.e., a thicker grown layer at the ends. In the figure, 4a is a melt of Ga, Al and p type impurities are introduced.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1078781A JPS5941959B2 (en) | 1981-01-29 | 1981-01-29 | Liquid phase epitaxial growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1078781A JPS5941959B2 (en) | 1981-01-29 | 1981-01-29 | Liquid phase epitaxial growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57129896A true JPS57129896A (en) | 1982-08-12 |
JPS5941959B2 JPS5941959B2 (en) | 1984-10-11 |
Family
ID=11760039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1078781A Expired JPS5941959B2 (en) | 1981-01-29 | 1981-01-29 | Liquid phase epitaxial growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5941959B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58202524A (en) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Crystal growing device |
JPS63224229A (en) * | 1987-03-12 | 1988-09-19 | Mitsubishi Electric Corp | Liquid phase crystal growth device |
-
1981
- 1981-01-29 JP JP1078781A patent/JPS5941959B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58202524A (en) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Crystal growing device |
JPH0454371B2 (en) * | 1982-05-21 | 1992-08-31 | Hitachi Ltd | |
JPS63224229A (en) * | 1987-03-12 | 1988-09-19 | Mitsubishi Electric Corp | Liquid phase crystal growth device |
Also Published As
Publication number | Publication date |
---|---|
JPS5941959B2 (en) | 1984-10-11 |
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