KR940014924A - GaAs single crystal growth method by horizontal zone melting method - Google Patents

GaAs single crystal growth method by horizontal zone melting method Download PDF

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Publication number
KR940014924A
KR940014924A KR1019920027294A KR920027294A KR940014924A KR 940014924 A KR940014924 A KR 940014924A KR 1019920027294 A KR1019920027294 A KR 1019920027294A KR 920027294 A KR920027294 A KR 920027294A KR 940014924 A KR940014924 A KR 940014924A
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South Korea
Prior art keywords
single crystal
gaas single
zone melting
horizontal zone
crystal growth
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KR1019920027294A
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Korean (ko)
Inventor
오명환
송준석
이호성
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박원근
금성전선 주식회사
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Priority to KR1019920027294A priority Critical patent/KR940014924A/en
Publication of KR940014924A publication Critical patent/KR940014924A/en

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Abstract

본 발명은 GaAs 단결정 성장의 방법에 관한 것으로, 보다 상세하게는 수평 존 멜팅(Zone melting) 방법을 사용하여 규소(Si)등의 잔류 분순물의 유입이 더 적은 고품위 GaAs 단결정 성장방법에 관한 것이다.The present invention relates to a method of growing GaAs single crystals, and more particularly, to a method of growing high quality GaAs single crystals with less inflow of residual impurities such as silicon (Si) using a horizontal zone melting method.

이는 GaAs 단결정 성장시, 고오부에서 국부적 용융부를 갖게하여 1240~1250℃를 유지하고 다결정부위는 1200℃, 저온부는 1100℃가 되게하여 성장속도 3~5(mm/hr)로 단결정을 얻게하는 것으로, 잔류 불순물의 유입이 절반이하로 줄이고 도핑시에도 도판트의 농도분포를 더 균일하게 하여 고품위의 단결정을 얻게 한 것이 특징이다.This means that when GaAs single crystal grows, it has local melted part at high part, maintains 1240 ~ 1250 ° C, polycrystalline part is 1200 ° C and low temperature part is 1100 ° C to obtain single crystal with growth rate 3 ~ 5 (mm / hr). In addition, the inflow of residual impurities is reduced to less than half and the dopant concentration distribution becomes more uniform even when doping, thereby obtaining high quality single crystals.

Description

수평 존 멜팅(Zone melting)방법에 의한 GaAs 단결정 성장방법GaAs single crystal growth method by horizontal zone melting method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 수평 존 멜팅 방법에 의한 GaAs 성장법을 나타낸 도면.2 is a diagram showing a GaAs growth method by the horizontal zone melting method of the present invention.

제3도는 본 발명의 수평 존 멜팅 방법에 의한 반응관의 형상 및 다결정내의 도판트(dopant)농도 분포를 나타낸 도면.3 is a view showing the shape of the reaction tube and the distribution of dopant concentration in the polycrystal by the horizontal zone melting method of the present invention.

제4도는 본 발명의 성장후의 도판트 농도 분포를 나타낸 도면.4 shows the dopant concentration distribution after growth of the present invention.

Claims (2)

GaAs 단결정 성장시, 고온부에서 국부적 용융부를 갖게하여 1240~1250℃를 유지하고 다결정부위는 1200℃ 저온부는 1100℃가 되게 하여 성장속도 3~5(mm/hr)로 단결정을 얻게하는 것을 특징으로 하는 수평 존 멜팅 방법에 의한 GaAs 단결정 성장방법.When GaAs single crystal is grown, it has local melting part at high temperature part to maintain 1240 ~ 1250 ℃, and polycrystalline part is 1200 ℃ and low temperature part is 1100 ℃ to get single crystal at growth rate 3 ~ 5 (mm / hr). GaAs single crystal growth method by horizontal zone melting method. 제1항에 있어서, 잔류불순물의 유입이 절반이하로 줄이고 두핑시에도 도판트이 농도분포를 더 균일하게 하여 단결정 수율을 향상시킴을 특징으로 하는 수평 존 멜팅 방법에 의한 GaAs 단결정 성장방법.The GaAs single crystal growth method according to claim 1, wherein the inflow of residual impurities is less than half and the dopant improves the single crystal yield evenly during doping, thereby improving single crystal yield. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920027294A 1992-12-31 1992-12-31 GaAs single crystal growth method by horizontal zone melting method KR940014924A (en)

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KR1019920027294A KR940014924A (en) 1992-12-31 1992-12-31 GaAs single crystal growth method by horizontal zone melting method

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KR1019920027294A KR940014924A (en) 1992-12-31 1992-12-31 GaAs single crystal growth method by horizontal zone melting method

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KR940014924A true KR940014924A (en) 1994-07-19

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101274437B1 (en) * 2010-12-30 2013-06-18 삼성코닝정밀소재 주식회사 Apparatus for manufacturing single crystal ingot
KR101274436B1 (en) * 2010-12-30 2013-06-18 삼성코닝정밀소재 주식회사 Crucible to product ingot using the horizontal directional solidification

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101274437B1 (en) * 2010-12-30 2013-06-18 삼성코닝정밀소재 주식회사 Apparatus for manufacturing single crystal ingot
KR101274436B1 (en) * 2010-12-30 2013-06-18 삼성코닝정밀소재 주식회사 Crucible to product ingot using the horizontal directional solidification

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