KR940014924A - GaAs single crystal growth method by horizontal zone melting method - Google Patents
GaAs single crystal growth method by horizontal zone melting method Download PDFInfo
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- KR940014924A KR940014924A KR1019920027294A KR920027294A KR940014924A KR 940014924 A KR940014924 A KR 940014924A KR 1019920027294 A KR1019920027294 A KR 1019920027294A KR 920027294 A KR920027294 A KR 920027294A KR 940014924 A KR940014924 A KR 940014924A
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- single crystal
- gaas single
- zone melting
- horizontal zone
- crystal growth
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Abstract
본 발명은 GaAs 단결정 성장의 방법에 관한 것으로, 보다 상세하게는 수평 존 멜팅(Zone melting) 방법을 사용하여 규소(Si)등의 잔류 분순물의 유입이 더 적은 고품위 GaAs 단결정 성장방법에 관한 것이다.The present invention relates to a method of growing GaAs single crystals, and more particularly, to a method of growing high quality GaAs single crystals with less inflow of residual impurities such as silicon (Si) using a horizontal zone melting method.
이는 GaAs 단결정 성장시, 고오부에서 국부적 용융부를 갖게하여 1240~1250℃를 유지하고 다결정부위는 1200℃, 저온부는 1100℃가 되게하여 성장속도 3~5(mm/hr)로 단결정을 얻게하는 것으로, 잔류 불순물의 유입이 절반이하로 줄이고 도핑시에도 도판트의 농도분포를 더 균일하게 하여 고품위의 단결정을 얻게 한 것이 특징이다.This means that when GaAs single crystal grows, it has local melted part at high part, maintains 1240 ~ 1250 ° C, polycrystalline part is 1200 ° C and low temperature part is 1100 ° C to obtain single crystal with growth rate 3 ~ 5 (mm / hr). In addition, the inflow of residual impurities is reduced to less than half and the dopant concentration distribution becomes more uniform even when doping, thereby obtaining high quality single crystals.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 수평 존 멜팅 방법에 의한 GaAs 성장법을 나타낸 도면.2 is a diagram showing a GaAs growth method by the horizontal zone melting method of the present invention.
제3도는 본 발명의 수평 존 멜팅 방법에 의한 반응관의 형상 및 다결정내의 도판트(dopant)농도 분포를 나타낸 도면.3 is a view showing the shape of the reaction tube and the distribution of dopant concentration in the polycrystal by the horizontal zone melting method of the present invention.
제4도는 본 발명의 성장후의 도판트 농도 분포를 나타낸 도면.4 shows the dopant concentration distribution after growth of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019920027294A KR940014924A (en) | 1992-12-31 | 1992-12-31 | GaAs single crystal growth method by horizontal zone melting method |
Applications Claiming Priority (1)
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KR1019920027294A KR940014924A (en) | 1992-12-31 | 1992-12-31 | GaAs single crystal growth method by horizontal zone melting method |
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KR940014924A true KR940014924A (en) | 1994-07-19 |
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KR1019920027294A KR940014924A (en) | 1992-12-31 | 1992-12-31 | GaAs single crystal growth method by horizontal zone melting method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101274437B1 (en) * | 2010-12-30 | 2013-06-18 | 삼성코닝정밀소재 주식회사 | Apparatus for manufacturing single crystal ingot |
KR101274436B1 (en) * | 2010-12-30 | 2013-06-18 | 삼성코닝정밀소재 주식회사 | Crucible to product ingot using the horizontal directional solidification |
-
1992
- 1992-12-31 KR KR1019920027294A patent/KR940014924A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101274437B1 (en) * | 2010-12-30 | 2013-06-18 | 삼성코닝정밀소재 주식회사 | Apparatus for manufacturing single crystal ingot |
KR101274436B1 (en) * | 2010-12-30 | 2013-06-18 | 삼성코닝정밀소재 주식회사 | Crucible to product ingot using the horizontal directional solidification |
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