KR101274436B1 - Crucible to product ingot using the horizontal directional solidification - Google Patents

Crucible to product ingot using the horizontal directional solidification Download PDF

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Publication number
KR101274436B1
KR101274436B1 KR1020100139268A KR20100139268A KR101274436B1 KR 101274436 B1 KR101274436 B1 KR 101274436B1 KR 1020100139268 A KR1020100139268 A KR 1020100139268A KR 20100139268 A KR20100139268 A KR 20100139268A KR 101274436 B1 KR101274436 B1 KR 101274436B1
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South Korea
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ingot
seed
crucible
growth
ingot growth
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KR1020100139268A
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Korean (ko)
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KR20120077341A (en
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장봉희
박종세
김동운
이동용
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삼성코닝정밀소재 주식회사
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Priority to KR1020100139268A priority Critical patent/KR101274436B1/en
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  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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Abstract

The crucible for producing an ingot through the horizontal unidirectional solidification of the present invention is a seed mounting portion mounted with a seed for smoothly inducing initial ingot growth, and is connected to the seed mounting portion at a predetermined angle and is in a molten state. Ingot growth includes the ingot growth portion which solidifies in the same crystal direction as the seed (seed) mounted on the seed mounting portion, the ingot growth portion is the longest in the middle portion, the width becomes smaller from the middle portion to the end portion It features.

Description

Crucible to produce ingot through horizontal unidirectional solidification {Crucible to product ingot using the horizontal directional solidification}

The present invention relates to a crucible for producing an ingot through horizontal unidirectional solidification, and more particularly to a crucible technology that can increase the productivity of the substrate process by changing the size and shape of the ingot produced in the crucible, thereby increasing the ingot usage rate. It is about.

A light emitting diode (LED) device is an electric device that generates light by converting current into light in an active layer in a light emitting structure when a forward current having a predetermined size is applied. In the early stage of development, a light emitting diode (LED) device formed a compound semiconductor such as indium phosphorus (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure.

Recently, LED devices have been commercially available due to the research and development of group III nitride semiconductor materials, and are widely used in display devices, light source devices, and environmental applications. Furthermore, a white light emitting diode (LED) device that emits white light by combining three LED chips of red, green, and blue, or by incorporating a phosphor into a short wavelength pumping LED device. Has been developed and its application range is widening. In particular, light emitting diode (LED) devices using solid single crystal semiconductors have high efficiency of converting electrical energy into light energy, have an average lifespan of more than 5 years, and can greatly reduce energy consumption and maintenance costs. Attention in the field of white light source.

As a light emitting diode (LED) substrate, a sapphire substrate, a gallium nitride (GaN) substrate, or the like is used. However, in order to obtain a sapphire substrate and a gallium nitride (GaN) substrate, it is necessary to grow a single crystal ingot using a unidirectional solidification method in a crucible.

For example, sapphire crystal ingot growth technology is to melt Al 2 O 3 as a raw material at high temperature to solidify the liquid Al 2 O 3 into a solid phase. Sapphire grown as a single crystal has excellent physical and chemical properties and is widely used as a substrate for LEDs. On the other hand, sapphire grown with polycrystalline has many internal defects and cannot be used as an LED substrate.

In the single crystal growth method, the atoms in the crystal are all grown in the same direction. The growth method is the Kyropolus method for growing a crystal using only a temperature gradient, and the Czochralski for growing a crystal. ) And a horizontal one-way solidification method using a horizontal temperature gradient.

1 is an exemplary view for explaining a conventional single crystal growth method, Figure 2 illustrates an ingot according to the single crystal growth method of FIG.

The single crystal growth method shown in FIG. 1 is a horizontal directional solidification method including a crucible 110 and a heater 120. The crucible 110 is connected to the seed mounting portion 111 in which a seed is mounted to smoothly induce initial ingot growth, and the seed mounting portion 111 so as to have a predetermined angle, and the raw material in the molten state is the seed mounting portion ( And an ingot growth part 112 solidifying in the same crystal direction as the seed mounted on the 111 and growing ingots. The heater 120 melts a solid raw material into a liquid phase and gradually lowers the temperature of the liquid raw material present in the liquid phase at a high temperature to allow crystals to grow in the same direction as the seed.

The ingot growth part 112 of the crucible 110 used in the conventional horizontal directional solidification method is manufactured in a rectangular shape having a substantially constant width. 2, the ingot 201 grown in the crucible 110 has a rectangular parallelepiped shape.

The ratio of the portion used in the form of a substrate among the crystals grown in the ingot form is referred to as the ingot utilization rate, and the ingot utilization rate is currently about 50% in the conventional horizontal directional solidification method. That is, when the width A of the ingot 201 of FIG. 2 is 600 mm and an 8-inch ingot is desired, eight cylindrical ingots as shown by reference numeral 211 can be obtained, but 8 inch ingots as shown by reference numeral 212. There was a problem that can not get a lot of parts left.

The present invention has been proposed in the background as described above, an object of the present invention is to provide a crucible for producing an ingot through the horizontal unidirectional solidification can increase the ingot use rate by changing the size and shape of the ingot produced in the crucible will be.

In order to achieve the above object, the crucible for producing an ingot through horizontal unidirectional solidification according to an aspect of the present invention, the seed mounting portion is mounted with a seed (seed) for smoothly inducing initial ingot growth; It is connected to the seed mounting portion at an angle and includes an ingot growth portion in which the molten state solidifies in the same crystal direction as the seed mounted on the seed mounting portion and grows ingot, wherein the ingot growth portion has the longest width of the middle portion. It is characterized in that the width is reduced from the middle portion to the end portion.

The crucible for producing an ingot through horizontal unidirectional solidification according to an additional aspect of the present invention is characterized in that the single crystal ingot grown in the ingot growth portion is sapphire.

A crucible for producing an ingot through horizontal unidirectional solidification according to an additional aspect of the present invention is characterized in that a plurality of ingot growth portions are connected in series.

According to the configuration as described above, the crucible for producing an ingot through the horizontal unidirectional solidification of the present invention is implemented so that the width of the ingot growth portion is the longest in the middle portion, the width becomes smaller from the middle portion to the end portion, the crucible By changing the size and shape of the ingot produced in the increase ingot usage rate has a useful effect to increase the productivity of the substrate process.

1 is an exemplary view for explaining a conventional single crystal growth method.
FIG. 2 illustrates an ingot according to the single crystal growth scheme of FIG. 1.
3 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a first embodiment of the present invention.
4 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a second embodiment of the present invention.
5 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a third embodiment of the present invention.
6 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a fourth embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

3 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a first embodiment of the present invention.

As shown, the crucible 310 for producing an ingot through horizontal unidirectional solidification is implemented to include a seed mounting portion 311 and the ingot growth portion 312. The crucible 310 is made of molybdenum material and is manufactured so that the top surface is opened so that raw materials can be filled.

The seed mounting portion 311 is equipped with a seed (seed) for smoothly inducing initial ingot growth. Seed mounting portion 311 is made in a triangular shape to allow the crystal growth to occur smoothly.

The ingot growth part 312 is connected to the seed mounting part 311 to have a predetermined angle, and the raw material in the molten state solidifies in the same crystal direction as the seed mounted on the seed mounting part 311 to grow the ingot. In a preferred embodiment, the ingot growth portion 312 is manufactured to have a size and structure that can increase the ingot use rate. In an example, the ingot growth part 312 has a long width A-A of the middle part, and is implemented such that the width decreases from the middle part to the end part. Here, the ingot growth portion 312 is implemented in a rhombus shape.

For example, the single crystal ingot grown in the ingot growth unit 312 is characterized in that the sapphire. Sapphire single crystal ingots require the C-axis direction to be used as light emitting diode (LED) devices. The usage rate of the ingot grown in the crucible 310 according to the present invention is improved to about 70% level.

4 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a second embodiment of the present invention.

As shown, the crucible 410 for producing an ingot through horizontal unidirectional solidification is implemented to include a seed mounting portion 411, the ingot growth portion 412. The crucible 410 is made of molybdenum material and is manufactured so that the top surface is opened so that raw materials can be filled.

The seed mounting portion 411 is equipped with a seed (seed) for smoothly inducing initial ingot growth. Seed mounting portion 411 is made in a triangular shape to allow the crystal growth to occur smoothly.

The ingot growth part 412 is connected to the seed mounting part 411 to have a predetermined angle, and the raw material in the molten state solidifies in the same crystal direction as the seed mounted on the seed mounting part 411 to grow ingot. In a preferred embodiment, the ingot growth portion 312 is manufactured to have a size and structure that can increase the ingot use rate. In an example, the ingot growth part 412 has the longest width AA in the middle portion, and the width is reduced from the middle portion to the end portion thereof. Here, the ingot growth portion 412 is implemented in a hexagonal shape.

5 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a third embodiment of the present invention.

As shown, the crucible 510 for producing an ingot through horizontal unidirectional solidification is implemented to include a seed mounting portion 511, and an ingot growth portion 512. The crucible 510 is made of molybdenum and is manufactured to have an upper surface open so that raw materials can be filled.

The seed mounting portion 511 is mounted with a seed for smoothly inducing initial ingot growth. The seed mounting portion 511 is manufactured in a triangular shape to allow the crystal growth to occur smoothly.

The ingot growth unit 512 is connected to the seed mounting unit 511 to have a predetermined angle, and the raw material in the molten state solidifies in the same crystal direction as the seed mounted on the seed mounting unit 511 to grow ingots. In a preferred embodiment, the ingot growth portion 512 is manufactured to have a size and structure that can increase the ingot use rate. In an example, the ingot growth part 312 has a long width A-A of the middle part, and is implemented such that the width decreases from the middle part to the end part. Here, the ingot growth portion 512 is implemented in a circular shape.

6 shows a crucible for producing an ingot through horizontal unidirectional solidification according to a fourth embodiment of the invention.

As shown, the crucible 610 for producing an ingot through horizontal unidirectional solidification is implemented by including a seed mounting portion 611 and a plurality of ingot growth portions 612 to 615. The crucible 610 is made of molybdenum material and is manufactured to have an upper surface open to fill the raw material.

The seed mounting portion 611 is mounted with a seed for smoothly inducing initial ingot growth. The seed mounting portion 611 is manufactured in a triangular shape to allow the crystal growth to occur smoothly.

The ingot growth unit 612 is connected to the seed mounting unit 611 at a predetermined angle, and the raw material in the molten state solidifies in the same crystal direction as the seed mounted on the seed mounting unit 611 to grow ingots. In a preferred embodiment, the ingot growth portion 612 is manufactured to have a size and structure that can increase the ingot use rate. For example, the ingot growth portion 612 has the longest width of the middle portion, and is implemented to decrease in width from the middle portion to the end portion. The plurality of ingot growth parts 612 to 615 are connected in series to facilitate the addition of raw materials, enable continuous growth, and improve productivity.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined only by the appended claims.

310, 410, 510, 610: crucible
311, 411, 511, 611: seed mount
312, 412, 512, 612-615: Ingot growth part

Claims (4)

Seed mounting portion is mounted to the seed (seed) for smoothly inducing the initial ingot growth;
Ingot growth unit is connected to the seed mounting portion having a predetermined angle, the ingot growth unit is solidified in the same crystal direction as the seed (seed) mounted in the seed mounting portion ingot growth portion;
The ingot growth portion is the crucible for producing an ingot through horizontal unidirectional solidification, characterized in that the width of the middle portion is the longest, the width becomes smaller from the middle portion to the end portion. The method of claim 1,
A crucible for producing an ingot through horizontal unidirectional solidification, wherein the single crystal ingot grown in the ingot growth portion is sapphire. The crucible for producing ingots according to claim 1, wherein the crucible for producing ingots through horizontal unidirectional solidification has a plurality of ingot growth units connected in series. The method of claim 1,
The ingot growth portion is a crucible for producing an ingot through horizontal unidirectional solidification, characterized in that implemented in rhombus, hexagon, or circle.
KR1020100139268A 2010-12-30 2010-12-30 Crucible to product ingot using the horizontal directional solidification KR101274436B1 (en)

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KR101274436B1 true KR101274436B1 (en) 2013-06-18

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273608A (en) * 1979-01-04 1981-06-16 Kerlin Allen L Method of forming a sheet of single crystal semiconductor material
KR940014924A (en) * 1992-12-31 1994-07-19 박원근 GaAs single crystal growth method by horizontal zone melting method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273608A (en) * 1979-01-04 1981-06-16 Kerlin Allen L Method of forming a sheet of single crystal semiconductor material
KR940014924A (en) * 1992-12-31 1994-07-19 박원근 GaAs single crystal growth method by horizontal zone melting method

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