KR101274437B1 - Apparatus for manufacturing single crystal ingot - Google Patents

Apparatus for manufacturing single crystal ingot Download PDF

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KR101274437B1
KR101274437B1 KR1020100139269A KR20100139269A KR101274437B1 KR 101274437 B1 KR101274437 B1 KR 101274437B1 KR 1020100139269 A KR1020100139269 A KR 1020100139269A KR 20100139269 A KR20100139269 A KR 20100139269A KR 101274437 B1 KR101274437 B1 KR 101274437B1
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South Korea
Prior art keywords
raw material
ingot
crucible
unit
zone melting
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KR1020100139269A
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Korean (ko)
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KR20120077342A (en
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김동운
박종세
장봉희
이동용
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삼성코닝정밀소재 주식회사
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Priority to KR1020100139269A priority Critical patent/KR101274437B1/en
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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

An ingot manufacturing apparatus for manufacturing an ingot through horizontal unidirectional solidification of the present invention includes a seed mounting part in which a seed is mounted to induce initial ingot growth, and a seed in which a raw material in a molten state is mounted in the seed mounting part. A crucible including an ingot growth part that solidifies in the same crystal direction and grows an ingot, a zone melting device including a heating element that melts the raw material filled in the crucible and surrounds the outside of the crucible ingot growth part, and the crucible and the zone melting device are mounted therein. The chamber includes a raw material supply unit installed inside the chamber and supplying a raw material in a solid state to the crucible, and a control unit installed outside the chamber to control operations of the raw material supply unit and the zone melting device.

Description

Ingot making device {APPARATUS FOR MANUFACTURING SINGLE CRYSTAL INGOT}

The present invention relates to a technique for manufacturing an ingot through horizontal unidirectional solidification, and more particularly, to an ingot manufacturing apparatus capable of increasing the ingot use rate by uniformly manufacturing the thickness of the ingot.

A light emitting diode (LED) device is an electric device that generates light by converting current into light in an active layer in a light emitting structure when a forward current having a predetermined size is applied. In the early stage of development, a light emitting diode (LED) device formed a compound semiconductor such as indium phosphorus (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure.

Recently, LED devices have been commercially available due to the research and development of group III nitride semiconductor materials, and are widely used in display devices, light source devices, and environmental applications. Furthermore, a white light emitting diode (LED) device that emits white light by combining three LED chips of red, green, and blue, or by incorporating a phosphor into a short wavelength pumping LED device. Has been developed and its application range is widening. In particular, light emitting diode (LED) devices using solid single crystal semiconductors have high efficiency of converting electrical energy into light energy, have an average lifespan of more than 5 years, and can greatly reduce energy consumption and maintenance costs. Attention in the field of white light source.

As a light emitting diode (LED) substrate, a sapphire substrate, a gallium nitride (GaN) substrate, or the like is used. However, in order to obtain a sapphire substrate and a gallium nitride (GaN) substrate, it is necessary to grow a single crystal ingot using a unidirectional solidification method in a crucible.

For example, sapphire crystal ingot growth technology is to melt the raw material Al 2 O 3 at a high temperature to solidify the liquid Al 2 O 3 in a solid state. Sapphire grown as a single crystal has excellent physical and chemical properties and is widely used as a substrate for LEDs. On the other hand, sapphire grown with polycrystalline has many internal defects and cannot be used as an LED substrate.

In the single crystal growth method, the atoms in the crystal are all grown in the same direction. The growth method is the Kyropolus method for growing a crystal using only a temperature gradient, and the Czochralski for growing a crystal. ) And a horizontal one-way solidification method using a horizontal temperature gradient.

1 is an ingot production apparatus using a conventional horizontal unidirectional solidification method.

As shown, a conventional ingot manufacturing apparatus using a horizontal unidirectional solidification method includes a crucible 110 and a heating element (120). The crucible 110 is connected to the seed mounting portion 111 on which the seed 1 for inducing initial ingot growth is mounted, and the seed mounting portion 111 to have a predetermined angle, and the raw material 3 in the molten state is And an ingot growth part 112 solidifying in the same crystal direction as the seed 1 mounted on the seed mounting part 111 and growing into the ingot 2.

The heating element 120 melts the raw material in the solid state to make the liquid state and gradually lowers the temperature so that the crystals grow in the same direction as the seed 1. The heating element 120 is manufactured such that the coil surrounds the outside of the crucible 110 and melts the raw material while moving at a constant or partially different speed from the beginning to the end of the crucible 110. This raw material melting method is called partial melting or zone melting.

2 illustrates a process of growing an ingot by an apparatus for manufacturing an ingot using a conventional horizontal unidirectional solidification method. Here, reference numeral 210 is a crucible, 220 is a heating element, 2 is an ingot, 3 is a raw material in a molten state, and 4 is a raw material in a solid state.

As shown in Figs. 2 a), b), c) and d), the seed mounting part 111 is melted while melting the raw material 1 in the solid state filled in the crucible 210 using a zone melting method. Ingot produced by solidification in the same crystal direction as the seed (seed) mounted on the) is not constant in thickness. That is, in the process of manufacturing an ingot using a zone melting method, the ingot 2 may be formed due to a density difference between the raw material in the solid state filled in the crucible 210 and the raw material in the liquid state melted by the heating element 220. There was a problem that the thickness of the) decreases.

The present invention has been proposed in the above background, and an object of the present invention is to provide an ingot manufacturing apparatus capable of uniformly manufacturing the thickness of the ingot.

In order to achieve the above object, an ingot manufacturing apparatus for producing an ingot through horizontal unidirectional solidification according to an aspect of the present invention, the seed mounting portion and the molten state is equipped with a seed (seed) to induce initial ingot growth Of the crucible comprising an ingot growth portion which solidifies ingots and grows in the same crystal direction as the seed mounted on the seed mounting portion, and a zone including a heating element that fuses the raw material filled in the crucible and surrounds the outside of the crucible ingot growth portion. Melting apparatus, a chamber in which the crucible and the zone melting apparatus are mounted therein, a raw material supply unit installed inside the chamber and supplying a solid material to the crucible, and a control unit installed outside the chamber and controlling the operation of the raw material supply unit and the zone melting apparatus It includes.

An ingot manufacturing apparatus for manufacturing an ingot through horizontal unidirectional solidification according to an additional aspect of the present invention includes a laser irradiator for irradiating a laser to a crucible ingot growth portion which is installed outside the chamber and in which raw materials are melted by a zone melting apparatus. The detector may further include a detector for detecting a laser reflected to the molten raw material irradiated to the laser irradiation unit, and a transfer unit for transferring the laser irradiation unit and the detector according to a movement control signal input from the controller.

According to this aspect, the controller calculates the crucible height reduced by melting the raw material filled in the crucible ingot growth part by using the time when the laser irradiation control signal is output to the laser irradiation part and the time when the laser detection signal is input from the detector. And outputting a raw material supply control signal corresponding to the reduced crucible height to the raw material supply unit.

According to the configuration as described above, the ingot manufacturing apparatus for producing an ingot through the horizontal unidirectional solidification of the present invention is installed inside the chamber and the raw material supply unit for supplying the raw material in the solid state to the crucible and the raw material supply unit and Implemented to include a control unit for controlling the operation of the zone melting device, as the thickness of the molten liquid raw material portion is reduced in the crucible, it is useful to grow an ingot with a constant thickness by additionally supplying the raw material in the solid state have.

1 is an ingot production apparatus using a conventional horizontal unidirectional solidification method.
2 illustrates a process of growing an ingot by an apparatus for manufacturing an ingot using a conventional horizontal unidirectional solidification method.
Figure 3 is an exemplary view for explaining the ingot production apparatus using a horizontal one-way solidification method according to the present invention.
4 is an exemplary view for explaining a process of growing an ingot by the apparatus for producing an ingot using a horizontal unidirectional solidification method according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

Figure 3 is an exemplary view for explaining the ingot production apparatus using a horizontal one-way solidification method according to the present invention.

As shown, the apparatus for producing an ingot using the horizontal unidirectional solidification method according to the present invention is largely a zone melting apparatus including a crucible 310, a heating element 321, a chamber 330, and a raw material supply unit 340. And a control unit 350.

The crucible 310 is made of molybdenum material and is manufactured so that the top surface is opened so that raw materials can be filled. The crucible 310 includes a seed mounting part 311 and an ingot growth part 312.

The seed mount 311 is equipped with a seed 1 for smoothly inducing initial ingot growth. Seed mounting portion 311 is made in a triangular shape to allow the crystal growth to occur smoothly.

The ingot growth part 312 is connected to the seed mounting part 311 to have a predetermined angle, and the raw material in the molten state solidifies in the same crystal direction as the seed mounted on the seed mounting part 311 to grow the ingot.

For example, the single crystal ingot grown in the ingot growth unit 312 is characterized in that the sapphire. Sapphire single crystal ingots require the C-axis direction to be used as light emitting diode (LED) devices.

The zone melting apparatus melts the raw material filled in the crucible 310, and includes a heating element 321 surrounding the outside of the ingot growth portion 312 of the crucible 310. The heating element 411 may be implemented as a heater in the form of a coil. The heating element 321 may be implemented as a different coil group that is spaced apart at equal intervals surrounding the outer surface of the ingot growth portion 312 of the crucible 310. In this case, zone melting may be performed by sequentially driving different coil groups.

The zone melting device may include a mobile device (not shown) for moving the heating element 321. In this case, the heating element 321 melts the raw material while moving at a constant or partially different speed from the beginning to the end of the crucible 310.

The chamber 330 mounts the crucible 310, the zone melting device, and the raw material supply unit 340 therein. The chamber 330 is preferably formed of a material through which a laser can be transmitted. For example, the chamber 330 may be formed of a ceramic material.

The raw material supplier 340 is installed inside the chamber 330, and supplies the raw material in a solid state to the crucible 310. When the heating element 321 heats the crucible 310 while moving in the horizontal direction, the solid raw material filled in the crucible 310 is melted, and when the heating element 321 moves, the raw material in the molten state is seeded. Solidify in the same crystal direction as At this time, the thickness of the raw material of the liquid state melted in the crucible 210 is reduced than the thickness of the raw material of the solid state. The raw material supply unit 340 additionally supplies the raw material in the solid state to the crucible 210 by the thickness decrease.

The control unit 350 is installed outside the chamber 330 and controls the operations of the raw material supply unit 340 and the zone melting apparatus.

For example, when the heating element 321 of the zone melting apparatus is implemented with different coil groups that are spaced apart at equal intervals surrounding the outer surface of the ingot growth portion 312 of the crucible 310, the control unit 350 is Zone melting may be performed by sequentially driving different coil groups.

As another example, when the zone melting device includes a moving device (not shown) for moving the heating element 321, the control unit 350 may determine that the heating element 321 is constant from the beginning to the end of the crucible 310. Zone melting may be performed at partially different speeds.

As shown in FIG. 3B, the apparatus for manufacturing an ingot using the horizontal unidirectional solidification method according to the present invention may further include a laser irradiator 361 and a detector 362.

The laser irradiation unit 361 is installed outside the chamber 330, and irradiates a laser to the ingot growth unit 312 of the crucible 310 in which the raw material is melted by the heating element 321 of the zone melting apparatus. The detector 362 detects a laser which is irradiated to the laser irradiation unit 361 and reflected on the molten raw material. Reference numerals 363 and 364 denote tracks for guiding the directions in which the laser irradiation unit 361 and the detector 362 are transferred. Although not shown in FIG. 3B, the apparatus for manufacturing ingots according to the present invention may further include a transfer unit configured to transfer the laser irradiator 361 and the detector 362 according to a movement control signal input from the controller 350.

For example, the controller 350 uses the time at which the laser irradiation control signal is output to the laser irradiation unit 361 and the time at which the laser detection signal is input from the detector 362 to the crucible 310 and the ingot growth unit 312. The filled raw material may be melted by the heating element 321 to calculate a reduced crucible height and output a raw material supply control signal corresponding to the reduced crucible height to the raw material supplier 340.

4 is an exemplary view for explaining a process of growing an ingot by the apparatus for producing an ingot using a horizontal unidirectional solidification method according to the present invention.

As shown, the raw material supply unit 340 is a raw material storage unit 341 for storing the raw material and the raw material stored in the raw material storage unit 341 to the raw material supply control signal input from the control unit (reference numeral 350 in FIG. 3). Accordingly, it may be implemented to include a raw material discharge part 342 to discharge to the crucible 310. For example, the raw material discharge part 342 may be implemented as a vibration device for moving the raw material 4 in a solid state by vibration.

As shown, the process of growing the ingot by the ingot manufacturing apparatus using the horizontal unidirectional solidification method according to the present invention, first heating the crucible 310 while moving the heating element 321 in the horizontal direction, the crucible When the solid state raw material 4 filled in 310 is melted and the heating element 321 moves, the molten raw material solidifies in the same crystal direction as the seed. The thickness of the raw material 3 in the liquid state melted in the crucible 310 is smaller than the thickness of the raw material 4 in the solid state. At this time, the raw material supply unit 340 additionally supplies the raw material in the solid state to the crucible 310 by the thickness reduction. The additionally supplied solid state raw material 4 is melted by the heating element 321, and the molten raw material covers the already crystallized ingot 2. The already crystallized ingot 2 acts as another seed for the molten raw material covering the stomach. Finally, as shown in FIG. 4B, the ingot 2 having a constant thickness can be grown.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined only by the appended claims.

310: crucible
311: seed mount
312: Ingot Growth Department
321: heating element
330: chamber
340: raw material supply
341: raw material storage unit
342: raw material outlet
350:

Claims (5)

An ingot manufacturing apparatus for producing an ingot through horizontal unidirectional solidification,
A crucible comprising a seed mounting portion on which seeds for inducing initial ingot growth are mounted, and an ingot growth portion on which ingot growth is solidified in the same crystal direction as a seed mounted on the seed mounting portion;
Zone melting apparatus for fusing the raw material filled in the crucible, and including a heating element surrounding the outside of the crucible ingot growth portion;
A chamber in which the crucible and the zone melting device are mounted therein;
A raw material supply unit installed inside the chamber and supplying a raw material in a solid state to the crucible; And
A control unit installed outside the chamber to control operations of the raw material supply unit and the zone melting apparatus;
Ingot manufacturing apparatus comprising a. The method of claim 1, wherein the raw material supply unit:
A raw material storage unit for storing raw materials; And
A raw material discharging unit discharging raw materials stored in the raw material storage unit to the crucible according to a raw material supply control signal input from the controller;
Ingot manufacturing apparatus comprising a. 3. The method of claim 2,
Ingot manufacturing apparatus, characterized in that the raw material discharge portion is a vibrating device for moving the raw material by vibration. The apparatus of claim 1, wherein the ingot making device is:
A laser irradiator installed outside the chamber and irradiating a laser to the crucible ingot growth unit in which raw materials are melted by the zone melting apparatus;
A detector for detecting a laser beam reflected to the molten raw material by being irradiated to the laser irradiation unit; And
And a transfer unit configured to transfer the laser irradiation unit and the detector according to the movement control signal input from the control unit.
The control unit,
Using the time when the laser irradiation control signal is output to the laser irradiation unit and the time when the laser detection signal is input from the detector, a raw material filled in the crucible ingot growth unit is melted to calculate a reduced crucible height. Ingot manufacturing apparatus characterized in that for outputting the raw material supply control signal corresponding to the crucible height to the raw material supply. The apparatus of claim 1 wherein the zone melting device is:
A moving device for moving the heating element;
Ingot manufacturing apparatus further comprising a.
KR1020100139269A 2010-12-30 2010-12-30 Apparatus for manufacturing single crystal ingot KR101274437B1 (en)

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KR101274437B1 true KR101274437B1 (en) 2013-06-18

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006955B1 (en) * 1990-12-07 1993-07-24 한국과학기술연구원 Apparatus for growing single-crystal
KR940014924A (en) * 1992-12-31 1994-07-19 박원근 GaAs single crystal growth method by horizontal zone melting method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006955B1 (en) * 1990-12-07 1993-07-24 한국과학기술연구원 Apparatus for growing single-crystal
KR940014924A (en) * 1992-12-31 1994-07-19 박원근 GaAs single crystal growth method by horizontal zone melting method

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